公开(公告)号：EP3036188A4

公开(公告)日：2017-04-12

申请号：EP13891862

申请日：2013-08-23

Applicant: INTEL CORP

Inventor： MAHAMEED RASHED ,  DORSEY KRISTEN L ,  M M ABDELMEJEED MAMDOUH O ,  ABDELMONEUM MOHAMED A

IPC: B81B7/00 ,  B81C1/00 ,  G01C19/56 ,  G01P15/08 ,  G01P15/125 ,  G01P15/14

CPC classification number: B81B3/0051 ,  B81B3/0021 ,  B81B7/008 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/0145 ,  B81C1/00166 ,  B81C1/00246 ,  B81C1/00531 ,  B81C2203/0714 ,  B81C2203/0742 ,  G01C19/5733 ,  G01P15/125 ,  G01P2015/0814

Abstract: A MEMS device, such as an accelerometer or gyroscope, fabricated in interconnect metallization compatible with a CMOS microelectronic device. In embodiments, a proof mass has a first body region utilizing a thick metal layer that is separated from a thin metal layer. The thick metal layer has a film thickness that is significantly greater than that of the thin metal layer for increased mass. The proof mass further includes a first sensing structure comprising the thin metal layer, but lacking the thick metal layer for small feature sizes and increased capacitive coupling to a surrounding fame that includes a second sensing structure comprising the thin metal layer, but also lacking the thick metal layer. In further embodiments, the frame is released and includes regions with the thick metal layer to better match film stress-induced static deflection of the proof mass.

Abstract translation: MEMS器件，例如加速度计或陀螺仪，其制造在与CMOS微电子器件兼容的互连金属化中。 在实施例中，检验物质具有利用与金属薄层分离的厚金属层的第一体区。 厚金属层具有比用于增加质量的薄金属层的膜厚度显着更大的膜厚度。 检测质量还包括第一感测结构，其包括薄金属层，但是缺少用于小特征尺寸的厚金属层和增加到周围声望的电容耦合，其包括包含薄金属层的第二检测结构，但是也缺少厚的 金属层。 在另外的实施例中，框架被释放并且包括具有厚金属层的区域以更好地匹配膜应力引起的检验质量块的静态偏转。