公开(公告)号：EP3160897A4

公开(公告)日：2018-01-24

申请号：EP14896176

申请日：2014-06-27

Applicant: INTEL CORP

Inventor： MUNOZ JORGE A ,  NIKONOV DMITRI E ,  KUHN KELIN J ,  THEOFANIS PATRICK ,  PAWASHE CHYTRA ,  LIN KEVIN ,  KIM SEIYON

IPC: B81B7/02

CPC classification number: B82B1/005 ,  B81B3/0016 ,  B81B7/02 ,  B81B2201/014 ,  B81B2203/0118 ,  B82B1/002 ,  B82B3/0023 ,  B82Y15/00 ,  B82Y25/00 ,  B82Y40/00 ,  H01H59/0009 ,  H01L29/66227 ,  H01L29/82 ,  H01L29/84 ,  Y10S977/732 ,  Y10S977/838 ,  Y10S977/888 ,  Y10S977/938

Abstract: Nanoelectromechanical (NEMS) devices having nanomagnets for an improved range of operating voltages and improved control of dimensions of a cantilever are described. For example, in an embodiment, a nanoelectromechanical (NEMS) device includes a substrate layer, a first magnetic layer disposed above the substrate layer, a first dielectric layer disposed above the first magnetic layer, a second dielectric disposed above the first dielectric layer, and a cantilever disposed above the second dielectric layer. The cantilever bends from a first position to a second position towards the substrate layer when a voltage is applied to the cantilever.