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    IMAGE GENERATION IN AN ELECTRONIC DEVICE USING ULTRASONIC TRANSDUCERS
    1.
    发明申请
    IMAGE GENERATION IN AN ELECTRONIC DEVICE USING ULTRASONIC TRANSDUCERS 审中-公开

    公开(公告)号：WO2019005487A1

    公开(公告)日：2019-01-03

    申请号：PCT/US2018/037364

    申请日：2018-06-13

    Applicant: INVENSENSE, INC.

    Inventor： GARLEPP, Bruno W. ,  SALVIA, James Christian ,  DANEMAN, Michael ,  APTE, Nikhil ,  TSAI, Julius Ming-Lin

    IPC: G06K9/00

    Abstract: A method for generating a composite image having an increased image pixel density by an array of ultrasonic transducers having a given spatial density is provided. The method comprises capturing a first set of pixels at an ultrasonic sensor using a first beamforming pattern, wherein the first beamforming pattern comprises a first pattern of ultrasonic transducers of the ultrasonic sensor. The method further comprises capturing a second set of pixels at the ultrasonic sensor using a second beamforming pattern, wherein the second beamforming pattern comprises a second pattern of ultrasonic transducers. The first beamforming pattern and the second beamforming pattern are different. Pixels of the second set of pixels correspond to positions between pixels of the first set of pixels. The method additionally comprises combining the first and second sets of pixels to form the composite image.

    PIEZOELECTRIC ACOUSTIC RESONATOR BASED SENSOR
    2.
    发明申请
    PIEZOELECTRIC ACOUSTIC RESONATOR BASED SENSOR 审中-公开
    基于压电声学谐振器的传感器

    公开(公告)号：WO2016022439A1

    公开(公告)日：2016-02-11

    申请号：PCT/US2015/043329

    申请日：2015-07-31

    Applicant: INVENSENSE, INC.

    Inventor： LIU, Fang ,  TSAI, Julius Ming-Lin ,  LI, Xiang ,  DANEMAN, Mike

    IPC: G06F3/043

    CPC classification number: G01L1/165 ,  G06F3/0436 ,  H03K17/96 ,  H03K17/9643 ,  H03K2217/96003

    Abstract: A piezoelectric acoustic resonator based sensor is presented herein. A device can include an array of piezoelectric transducers and an array of cavities that has been attached to the array of piezoelectric transducers to form an array of resonators. A resonator of the array of resonators can be associated with a first frequency response corresponding to a first determination that the resonator has been touched, and a second frequency response corresponding to a second determination that the resonator has not been touched. The array of piezoelectric transducers can include a piezoelectric material; a first set of electrodes that has been formed a first side of the piezoelectric material; and a second set of electrodes that has been formed on second side of the piezoelectric material.

    Abstract translation: 本文介绍了一种基于压电声谐振器的传感器。 器件可以包括压电换能器的阵列和已经附接到压电换能器阵列以形成谐振器阵列的空腔阵列。 谐振器阵列的谐振器可以与对应于谐振器已被触摸的第一确定的第一频率响应和对应于谐振器未被触摸的第二确定的第二频率响应相关联。 压电换能器阵列可包括压电材料; 已经形成为压电材料的第一侧的第一组电极; 以及已经形成在压电材料的第二侧上的第二组电极。

    DEVICE MOUNTABLE PACKAGING OF ULTRASONIC TRANSDUCERS
    3.
    发明申请
    DEVICE MOUNTABLE PACKAGING OF ULTRASONIC TRANSDUCERS 审中-公开
    器件可安装超声波传感器的包装

    公开(公告)号：WO2017192903A2

    公开(公告)日：2017-11-09

    申请号：PCT/US2017/031140

    申请日：2017-05-04

    Applicant: INVENSENSE, INC.

    Inventor： TSAI, Julius Ming-Lin

    IPC: B06B1/02

    Abstract: An electronic device including an array of ultrasonic transducers for generating and receiving ultrasonic signals, and an acoustic coupling layer overlying the array of ultrasonic transducers, where the ultrasonic signals are propagated through the acoustic coupling layer.

    Abstract translation: 包括用于产生和接收超声波信号的超声波换能器阵列以及覆盖超声波换能器阵列的声学耦合层的电子设备，其中超声波信号通过声学耦合层传播。 p>

    A PIEZOELECTRIC MICROMACHINED ULTRASONIC TRANSDUCER (PMUT)
    5.
    发明申请
    A PIEZOELECTRIC MICROMACHINED ULTRASONIC TRANSDUCER (PMUT) 审中-公开
    压电微机械超声换能器（PMUT）

    公开(公告)号：WO2017192890A1

    公开(公告)日：2017-11-09

    申请号：PCT/US2017/031120

    申请日：2017-05-04

    Applicant: INVENSENSE, INC.

    Inventor： NG, Eldwin ,  TSAI, Julius Ming-Lin ,  APTE, Nikhil

    IPC: H01L41/047 ,  B06B1/06

    Abstract: A Piezoelectric Micromachined Ultrasonic Transducer (PMUT) device is provided. The PMUT includes a substrate and an edge support structure connected to the substrate. A membrane is connected to the edge support structure such that a cavity is defined between the membrane and the substrate, where the membrane is configured to allow movement at ultrasonic frequencies. The membrane includes a piezoelectric layer and first and second electrodes coupled to opposing sides of the piezoelectric layer. An interior support structure is disposed within the cavity and connected to the substrate and the membrane.

    Abstract translation: 提供一种压电微机械超声波换能器（PMUT）装置。 PMUT包括衬底和连接到衬底的边缘支撑结构。 膜连接到边缘支撑结构，使得在膜和基底之间限定空腔，其中膜被构造成允许在超声频率下移动。 膜包括压电层以及耦合到压电层的相对侧的第一和第二电极。 内部支撑结构设置在空腔内并连接到基底和膜。

    OPERATING A TWO-DIMENSIONAL ARRAY OF ULTRASONIC TRANSDUCERS
    6.
    发明申请
    OPERATING A TWO-DIMENSIONAL ARRAY OF ULTRASONIC TRANSDUCERS 审中-公开
    操作二维阵列的超声换能器

    公开(公告)号：WO2017192895A1

    公开(公告)日：2017-11-09

    申请号：PCT/US2017/031127

    申请日：2017-05-04

    Applicant: INVENSENSE, INC.

    Inventor： APTE, Nikhil ,  TSAI, Julius Ming-Lin ,  DANEMAN, Michael Julian ,  BERGER, Renata Melamud

    IPC: G10K11/34 ,  B06B1/06

    Abstract: In a method of operating a two-dimensional array of ultrasonic transducers, a plurality of array positions comprising pluralities of ultrasonic transducers of the two-dimensional array of ultrasonic transducers is defined, the plurality of array positions each comprising a portion of ultrasonic transducers of the two dimensional array of ultrasonic transducers. For each array position of the plurality of array positions, a plurality of ultrasonic transducers associated with the respective array position are activated. The activation includes transmitting ultrasonic signals from a first group of ultrasonic transducers of the plurality of ultrasonic transducers, wherein at least some ultrasonic transducers of the first group of ultrasonic transducers are phase delayed with respect to other ultrasonic transducers of the first group of ultrasonic transducers. The activation also includes receiving reflected ultrasonic signals at a second group of ultrasonic transducers of the plurality of ultrasonic transducers.

    Abstract translation: 在操作超声波换能器的二维阵列的方法中，限定包括超声波换能器的二维阵列的多个超声波换能器的多个阵列位置，多个阵列位置各自 包括超声换能器的二维阵列的超声换能器的一部分。 对于多个阵列位置中的每个阵列位置，激活与相应阵列位置相关联的多个超声波换能器。 激活包括从多个超声波换能器的第一组超声波换能器发送超声波信号，其中第一组超声波换能器的至少一些超声波换能器相对于第一组超声波换能器的其他超声波换能器而言是相位延迟的。 激活还包括在多个超声换能器的第二组超声换能器处接收反射的超声信号。

    A TWO-DIMENSIONAL ARRAY OF CMOS CONTROL ELEMENTS
    9.
    发明申请
    A TWO-DIMENSIONAL ARRAY OF CMOS CONTROL ELEMENTS 审中-公开
    CMOS控制元件的二维阵列

    公开(公告)号：WO2017192899A1

    公开(公告)日：2017-11-09

    申请号：PCT/US2017/031134

    申请日：2017-05-04

    Applicant: INVENSENSE, INC.

    Inventor： SALVIA, James Christian ,  PERROTT, Michael H. ,  VOROS, Marian ,  NG, Eldwin ,  TSAI, Julius Ming-Lin ,  APTE, Nikhil

    IPC: H01L41/047 ,  B06B1/06 ,  H01L27/02 ,  B06B1/02 ,  G06K9/00 ,  H01L27/20 ,  H03H3/007

    Abstract: An electronic device includes a plurality of CMOS control elements arranged in a two-dimensional array, where each CMOS control element of the plurality of CMOS control elements includes two semiconductor devices. The plurality of CMOS control elements include a first subset of CMOS control elements, each CMOS control element of the first subset of CMOS control elements including a semiconductor device of a first class and a semiconductor device of a second class, and a second subset of CMOS control elements, each CMOS control element of the second subset of CMOS control elements including a semiconductor device of the first class and a semiconductor device of a third class. The plurality of CMOS control elements are arranged in the two-dimensional array such that CMOS semiconductor devices of a class are only adjacent to other CMOS semiconductor devices of the same class.

    Abstract translation: 电子设备包括布置成二维阵列的多个CMOS控制元件，其中多个CMOS控制元件中的每个CMOS控制元件包括两个半导体器件。 多个CMOS控制元件包括第一子集的CMOS控制元件，第一子集的CMOS控制元件的每个CMOS控制元件包括第一类半导体器件和第二类半导体器件，以及第二子集CMOS 控制元件，第二子集的CMOS控制元件的每个CMOS控制元件包括第一类半导体器件和第三类半导体器件。 多个CMOS控制元件排列成二维阵列，使得一类CMOS半导体器件仅与相同类别的其他CMOS半导体器件相邻。

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