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    1.
    发明专利
    未知

    公开(公告)号：DE60022415T2

    公开(公告)日：2006-06-29

    申请号：DE60022415

    申请日：2000-03-07

    Applicant: JSR CORP

    Inventor： NISHIMURA YUKIO ,  KAI TOSHIYUKI ,  KOBAYASHI EIICHI ,  SHIOYA TAKEO

    IPC: G03F7/004 ,  G03F7/039 ,  G03F7/00 ,  G03F7/30 ,  H01L21/027

    Abstract: A method of forming a resist pattern from a chemically amplified positive radiation sensitive resin composition. The film thickness of an unexposed portion of a resist film formed from the chemically amplified positive radiation sensitive resin composition after wet development is 100 to 400 ANGSTROM smaller than that before wet development. Alternatively, a resist film formed from the chemically amplified positive radiation sensitive resin composition is wet developed at both a temperature and a time enough to ensure that the film thickness of an unexposed portion of the resist film after wet development is 100 to 400 ANGSTROM smaller than that before wet development. A resist film which is formed from a chemically amplified positive radiation sensitive resin composition and experiences a 100 to 400 ANGSTROM reduction in the film thickness of an unexposed portion by wet development is useful as a resist film for forming a resist pattern.

    2.
    发明专利
    未知

    公开(公告)号：DE60022415D1

    公开(公告)日：2005-10-13

    申请号：DE60022415

    申请日：2000-03-07

    Applicant: JSR CORP

    Inventor： NISHIMURA YUKIO ,  KAI TOSHIYUKI ,  KOBAYASHI EIICHI ,  SHIOYA TAKEO

    IPC: G03F7/039 ,  G03F7/00 ,  G03F7/004 ,  G03F7/30 ,  H01L21/027

    Abstract: A method of forming a resist pattern from a chemically amplified positive radiation sensitive resin composition. The film thickness of an unexposed portion of a resist film formed from the chemically amplified positive radiation sensitive resin composition after wet development is 100 to 400 ANGSTROM smaller than that before wet development. Alternatively, a resist film formed from the chemically amplified positive radiation sensitive resin composition is wet developed at both a temperature and a time enough to ensure that the film thickness of an unexposed portion of the resist film after wet development is 100 to 400 ANGSTROM smaller than that before wet development. A resist film which is formed from a chemically amplified positive radiation sensitive resin composition and experiences a 100 to 400 ANGSTROM reduction in the film thickness of an unexposed portion by wet development is useful as a resist film for forming a resist pattern.

    3.
    发明专利
    未知

    公开(公告)号：DE60043838D1

    公开(公告)日：2010-04-01

    申请号：DE60043838

    申请日：2000-12-22

    Applicant: JSR CORP

    Inventor： KAI TOSHIYUKI ,  WANG YONG ,  KUSUMOTO SHIROU ,  OHTA YOSHIHISA

    IPC: G03F7/038 ,  H01L21/027 ,  G03F7/004

    Abstract: A negative radiation-sensitive resin composition including (A) an alkali-soluble resin containing a copolymer selected from the group consisting of a hydroxystyrene/styrene copolymer having hydroxystyrene units in a content of from 65 to 90 mol% and a hydroxystyrene/ alpha -methylstyrene copolymer having hydroxystyrene units in a content of from 65 to 90 mol%, (B) a radiation-sensitive acid-generating agent containing a hydroxyl group-containing onium salt compound, and (C) a cross-linking agent containing an N-(alkoxymethyl)glycoluril compound. The composition is suitable as a chemically amplified negative resist, to which alkaline developing solutions having usual concentration are applicable and which can form, in usual line-and-space patterns, resist patterns having a rectangular cross-sectional shape in a high resolution and also has superior sensitivity, developability and dimensional fidelity.

    Negative radiation-sensitive resin composition
    8.
    发明专利
    Negative radiation-sensitive resin composition 有权
    负辐射敏感性树脂组合物

    公开(公告)号：JP2011053369A

    公开(公告)日：2011-03-17

    申请号：JP2009200955

    申请日：2009-08-31

    Applicant: Jsr Corp ,  Jsr株式会社

    Inventor： SHIMOKAWA TSUTOMU ,  KAI TOSHIYUKI ,  MARUYAMA KEN

    IPC: G03F7/038 ,  G03F7/004 ,  H01L21/027

    Abstract: PROBLEM TO BE SOLVED: To provide a negative radiation-sensitive resin composition capable of stably forming a chemically amplified negative resist film which is effectively sensitive to EB (electron beam) or EUV (extreme ultraviolet radiation), is excellent in roughness, etching resistance and sensitivity, and capable of stably forming a high-definition fine pattern. SOLUTION: The negative radiation-sensitive resin composition comprises: an arene-based compound (A) represented by general formula (1) or (2) (wherein a plurality of Rs each independently denote H or 1-8C alkyl, provided that at least one of the plurality of Rs is 1-8C alkyl; and a plurality of Xs each independently denote 1-8C alkylene); an acid crosslinking agent (B); an acid generator (C); an acid diffusion-controlling agent (D); and a solvent (E). COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：为了提供能够稳定地形成对EB（电子束）或EUV（极紫外线辐射）有效敏感的化学放大型负性抗蚀剂膜的负型辐射敏感性树脂组合物，其粗糙度优异， 耐蚀刻性和灵敏度，并且能够稳定地形成高分辨率精细图案。 解决方案：负辐射敏感性树脂组合物包含：由通式（1）或（2）表示的芳族基化合物（A）（其中多个R 5各自独立地表示H或1-8C烷基，提供 所述多个R s中的至少一个是1-8C烷基;多个X各自独立地表示1-8C的亚烷基）; 酸交联剂（B）; 酸发生剂（C）; 酸扩散控制剂（D）; 和溶剂（E）。 版权所有（C）2011，JPO＆INPIT

    Positive radiation-sensitive resin composition
    9.
    发明专利
    Positive radiation-sensitive resin composition 审中-公开
    积极的辐射敏感性树脂组合物

    公开(公告)号：JP2009223024A

    公开(公告)日：2009-10-01

    申请号：JP2008067866

    申请日：2008-03-17

    Applicant: Jsr Corp ,  Jsr株式会社

    Inventor： SHIMIZU DAISUKE ,  MARUYAMA KEN ,  KAI TOSHIYUKI

    IPC: G03F7/039 ,  C08F12/22 ,  C08F20/10 ,  G03F7/004 ,  H01L21/027

    Abstract: PROBLEM TO BE SOLVED: To provide a positive radiation-sensitive resin composition which contains a compound good also in compatibility with other components, can optimally control radiation transmittance particularly as a chemically amplified positive resist effectively sensitive to far-ultraviolet radiation, in particular, can effectively suppress a linewidth change of a resist pattern due to a thickness variation of a resist film on a highly reflecting substrate, and excels also in depth of focus latitude. SOLUTION: The positive radiation-sensitive resin composition includes (A) a calix arene type compound of a specific structure, (B) a radiation-sensitive acid generator, and (C) an alkali-insoluble or slightly alkali-soluble resin having an acid-dissociable group. COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：为了提供含有与其它组分相容性良好的化合物的正性辐射敏感性树脂组合物，可以最佳地控制辐射透射率，特别是作为对远紫外线辐射有效敏感的化学放大阳性抗蚀剂， 特别地，可以有效地抑制由于高反射性基板上的抗蚀剂膜的厚度变化而导致的抗蚀剂图案的线宽变化，并且还具有焦深宽度。 正型辐射敏感性树脂组合物包括（A）特定结构的杯状芳烃型化合物，（B）辐射敏感性酸产生剂，和（C）碱不溶性或微碱溶性树脂 具有酸解离基团。 版权所有（C）2010，JPO＆INPIT

    Radiation-sensitive resin composition
    10.
    发明专利
    Radiation-sensitive resin composition 有权
    辐射敏感性树脂组合物

    公开(公告)号：JP2005084365A

    公开(公告)日：2005-03-31

    申请号：JP2003316385

    申请日：2003-09-09

    Applicant: Jsr Corp ,  Jsr株式会社

    Inventor： KAI TOSHIYUKI ,  NISHIYAMA SATORU ,  TSUJI TAKAYUKI

    IPC: G03F7/004 ,  C08F12/30 ,  C08F20/00 ,  G03F7/039 ,  H01L21/027

    Abstract: PROBLEM TO BE SOLVED: To ensure excellence in roughness, etching resistance, sensitivity and resolution and to accurately and stably form a fine pattern. SOLUTION: The radiation-sensitive resin composition contains a polymer having an onium salt structural unit represented by formula (1) and/or formula (2) as a repeating unit, wherein R 1 represents H, halogen, cyano, a 1-5C linear or branched alkyl or haloalkyl; R 2 and R 3 each independently represent a substituted or unsubstituted 1-10C linear or branched alkyl, alkoxy or haloalkyl or a 6-20C aryl; A 1 represents a single bond, an ether bond, an ester bond or an amido bond; and X - represents an anion. COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题：确保粗糙度，耐蚀刻性，灵敏度和分辨率的卓越性，并精确而稳定地形成精细图案。 解决方案：该辐射敏感性树脂组合物含有具有由式（1）和/或式（2）表示的鎓盐结构单元作为重复单元的聚合物，其中R 1表示H ，卤素，氰基，1-5C直链或支链烷基或卤代烷基; R 2 和R 3 各自独立地表示取代或未取代的1-10C直链或支链烷基，烷氧基或卤代烷基或6-20C芳基; A 1 表示单键，醚键，酯键或酰胺键; 而X - 表示阴离子。 版权所有（C）2005，JPO＆NCIPI

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