公开(公告)号：EP2378362A4

公开(公告)日：2012-07-04

申请号：EP09822037

申请日：2009-10-21

Applicant: JSR CORP

Inventor： YADA YUJI ,  ANNO YUSUKE ,  KAKIZAWA TOMOHIRO ,  HORI MASAFUMI ,  MITA MICHIHIRO ,  WAKAMATSU GOJI

IPC: G03F7/40 ,  G03F7/00 ,  H01L21/027

CPC classification number: H01L21/0273 ,  G03F7/0035 ,  G03F7/0037 ,  G03F7/40

公开(公告)号：EP1679184A4

公开(公告)日：2009-02-18

申请号：EP04793218

申请日：2004-10-29

Applicant: JSR CORP

Inventor： AKIYAMA MASAHIRO ,  HATTORI SEITARO ,  KUROSAWA TAKAHIKO ,  SEKIGUCHI MANABU ,  KOKUBO TERUKAZU ,  MITA MICHIHIRO ,  YAMANAKA TATSUYA ,  OBI MASAKI

IPC: B32B27/00 ,  C09D183/14 ,  H01L21/312 ,  H01L21/768

CPC classification number: H01L21/02118 ,  C09D183/14 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  Y10T428/1014 ,  Y10T428/31663

Abstract: A laminate which comprises a first silica-based film, a second silica-based film and an organic film, wherein the second silica-based film has a mono-valent organic group containing a carbon-carbon double bond or a carbon-carbon triple bond; a method for forming the above laminate which comprises forming a first coating film for the first silica-based film on a substrate, forming a second coating film having a mono-valent organic group containing a carbon-carbon double bond or a carbon-carbon triple bond for the second silica-based film on the first coating film, forming a third coating film for the organic film on the second coating film, and then curing a laminated film comprising the above first to third coating films; an insulating film; a semiconductor device; and a composition for forming the film. The above laminate has a low dielectric constant, and also is excellent in the adhesiveness between the films.

公开(公告)号：EP1429376A4

公开(公告)日：2010-02-24

申请号：EP02762905

申请日：2002-08-29

Applicant: TOKYO ELECTRON LTD ,  JSR CORP

Inventor： HISHIYA SHINGO ,  SANO TETSUYA ,  SEKIGUCHI MANABU ,  MITA MICHIHIRO

IPC: H01L21/768 ,  H01L21/31 ,  H01L21/3105 ,  H01L21/312 ,  H01L21/316 ,  H01L23/522

CPC classification number: H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/31058 ,  H01L21/3122

公开(公告)号：JP2005092014A

公开(公告)日：2005-04-07

申请号：JP2003327749

申请日：2003-09-19

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： SHIRATO KAORI ,  MITA MICHIHIRO ,  SHIODA ATSUSHI

IPC: G03F7/11

Abstract: PROBLEM TO BE SOLVED: To provide a composition for forming a thermally decomposable lower layer film for a multi-layered resist process used to form the thermally decomposable lower layer film which eliminates the need for an ashing treatment, can be decomposed and removed through a simple heat treatment, and never damages an inorganic film such as a Low-K film. SOLUTION: In the composition for forming the thermally decomposable lower layer film for the multi-layered resist process, a weight decrease rate is ≤5 wt.% when the film is heated for one hour at 300°C in an inert gas atmosphere or vacuum atmosphere and the weight decrease rate is ≥80 wt.% when the film is heated for one hour at 420°C in an inert gas atmosphere, a vacuum atmosphere, a reducing gas atmosphere, or mixed atmosphere of inert gas and reducing gas. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 待解决的问题：提供一种用于形成用于形成可分解下层膜的多层抗蚀剂工艺的可热分解下层膜的组合物，其不需要灰化处理，可以分解和除去 通过简单的热处理，并且不会损坏诸如Low-K膜的无机膜。 解决方案：在用于形成用于多层抗蚀剂工艺的可热分解下层膜的组合物中，当在惰性气体中在300℃下将膜加热1小时时，重量减少率≤5重量％ 气氛或真空气氛，当在惰性气体气氛，真空气氛，还原气体气氛或惰性气体的混合气氛中将膜在420℃下加热1小时时，重量减少率为≥80重量％ 加油站。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2008041399A

公开(公告)日：2008-02-21

申请号：JP2006213551

申请日：2006-08-04

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： MASUKO HIDEAKI ,  SHODA RYOHEI ,  MITA MICHIHIRO ,  GOTO NAMIKO

IPC: H01J9/02 ,  H01J11/02 ,  H01J11/12 ,  H01J11/22 ,  H01J11/24 ,  H01J11/26 ,  H01J11/34 ,  H01J11/36 ,  H01J11/38 ,  H01J11/40 ,  H01J11/42 ,  H01J11/44

Abstract: PROBLEM TO BE SOLVED: To provide a formation method of a display panel member capable of reducing mixing between a dielectric formation material layer and a barrier rib formation material layer, and simplifying a process, and a transfer film capable of forming a member excelling in an aspect ratio and a pattern shape.
SOLUTION: This formation method of a display panel member is characterized by forming barrier ribs 103 partitioning display cells by a method including processes of: transferring the dielectric formation material layer formed on a support film to a substrate with electrodes formed thereon; transferring the barrier rib formation material layer formed on a support film to the dielectric formation material layer; baking the provided substrate to form a dielectric layer 109 and a barrier rib precursor layer; forming a resist film on the barrier rib precursor layer; exposing a resist pattern by executing an exposure process and a development process; forming a barrier rib pattern corresponding to the resist pattern by etching the barrier rib precursor layer; and forming the barrier ribs by separating the resist pattern.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 解决的问题：提供能够减少电介质形成材料层和障壁形成材料层之间的混合的显示面板构件的形成方法，并且简化工艺，以及能够形成构件的转印膜 卓越的纵横比和图案形状。 解决方案：显示面板部件的形成方法的特征在于，通过以下方法形成分隔显示单元的隔壁103：将形成在支撑膜上的电介质形成材料层转印到其上形成有电极的基板上; 将形成在支撑膜上的障壁形成材料层转印到电介质形成材料层上; 烘烤所提供的衬底以形成电介质层109和障壁前体层; 在隔壁前体层上形成抗蚀膜; 通过执行曝光处理和显影处理曝光抗蚀剂图案; 通过蚀刻隔壁前体层形成对应于抗蚀剂图案的障壁图案; 并通过分离抗蚀剂图案形成隔壁。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2011197150A

公开(公告)日：2011-10-06

申请号：JP2010061631

申请日：2010-03-17

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： WAKAMATSU TAKASHI ,  ANNO YUSUKE ,  MITA MICHIHIRO ,  FUJISAWA TOMOHISA ,  ITO NOBUJI

IPC: G03F7/039 ,  C08F20/28 ,  G03F7/40 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a radiation-sensitive composition that is used for double patterning and suitably used also for a liquid (such as water) immersion exposure process.SOLUTION: This radiation-sensitive composition is used in a resist pattern forming method including double patterning as a predetermined process. The radiation-sensitive composition contains (a) polymer containing repeating unit having a lactone structure or cyclic carbonate structure and also having acid-labile group, (b) radiation-sensitive acid generator, and (c) solvent.

Abstract translation: 要解决的问题：提供用于双重图案化并适合用于液体（例如水）浸渍曝光工艺的辐射敏感组合物。解决方案：该辐射敏感组合物以抗蚀剂图案形成方法使用，包括 双重图案化作为预定的过程。 辐射敏感性组合物包含（a）含有内酯结构或环状碳酸酯结构的重复单元的聚合物，并且还具有酸不稳定基团，（b）辐射敏感性酸产生剂和（c）溶剂。

公开(公告)号：JP2011053643A

公开(公告)日：2011-03-17

申请号：JP2010075604

申请日：2010-03-29

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： WAKAMATSU TAKASHI ,  HORI MASASHI ,  MITA MICHIHIRO

IPC: G03F7/40 ,  C08F20/18 ,  C08F20/22 ,  G03F7/004 ,  G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a resist pattern forming method which, in double patterning, can form a second resist pattern while retaining a first resist pattern without dissolving the first resist agent in the second resist agent, and which can suppress a line width variation of the first resist pattern and is suitably adopted even for a liquid immersion exposure process. SOLUTION: The resist pattern forming method includes a step (1) of forming a first resist pattern on a substrate with a first radiation-sensitive resin composition comprising a polymer (A1) and a solvent in which the polymer (A1) is soluble, and a step (2) of forming a second resist pattern with a second radiation-sensitive resin composition comprising a polymer (A2) and an alcoholic solvent in which the polymer (A2) is soluble, wherein the polymer (A1) and the first resist pattern are insoluble in the alcoholic solvent. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 解决的问题：提供一种抗蚀剂图案形成方法，其在双重构图中可以形成第二抗蚀剂图案，同时保持第一抗蚀剂图案而不将第一抗蚀剂溶解在第二抗蚀剂中，并且可以抑制 第一抗蚀剂图案的线宽变化，并且适用于液浸曝光处理。 抗蚀剂图案形成方法包括：在基材上形成第一抗蚀剂图案的步骤（1），该第一抗蚀剂图案包含聚合物（A1）和聚合物（A1）为 以及使用包含聚合物（A2）和其中可溶于聚合物（A2）的醇溶剂的第二辐射敏感性树脂组合物形成第二抗蚀剂图案的步骤（2），其中聚合物（A1）和 第一抗蚀剂图案不溶于醇溶剂。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2005199697A

公开(公告)日：2005-07-28

申请号：JP2004313715

申请日：2004-10-28

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： SEKIGUCHI MANABU ,  KOKUBO TERUKAZU ,  YAMANAKA TATSUYA ,  MITA MICHIHIRO

IPC: B32B27/00 ,  C08G77/20 ,  C09D183/02 ,  C09D183/07 ,  C09D183/14 ,  H01L21/312

CPC classification number: C08G2261/312 ,  C08G2261/46 ,  C08G2261/65 ,  C08G2261/80

Abstract: PROBLEM TO BE SOLVED: To provide a laminate having a low specific dielectric constant, an excellent adhesion laminate and its forming method, an insulation film and a semiconductor device. SOLUTION: The laminate contains a first silica film, a second silica film and an organic film, and the second silica film has a mono value organic base having carbon-carbon double bonds or carbon-carbon triple bonds. The laminate is formed by forming the first coating film for the first silica film on a base material, forming the second coating film having the carbon-carbon double bonds or the carbon-carbon triple bonds for the second coating film having a mono value organic base having carbon-carbon double bonds or the carbon-carbon triple bonds for the second silica film on the first coating film and forming the third coating film for the organic film on the second coating film to cure the laminate film comprising the first-the third coating films. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供具有低比介电常数的层压体，优异的粘合层压体及其形成方法，绝缘膜和半导体器件。 解决方案：层压体包含第一二氧化硅膜，第二二氧化硅膜和有机膜，第二二氧化硅膜具有具有碳 - 碳双键或碳 - 碳三键的单价有机碱。 通过在基材上形成第一二氧化硅膜的第一涂膜，形成具有碳 - 碳双键的第二涂膜或具有单价有机碱的第二涂膜的碳 - 碳三键形成层压体 在第一涂膜上具有碳 - 碳双键或第二二氧化硅膜的碳 - 碳三键，并在第二涂膜上形成用于有机膜的第三涂膜，以固化包含第一涂层 影片。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005093688A

公开(公告)日：2005-04-07

申请号：JP2003324597

申请日：2003-09-17

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： MITA MICHIHIRO ,  YAMANAKA TATSUYA ,  SEKIGUCHI MANABU ,  NAKAGAWA YASUSHI

IPC: H01L21/768 ,  H01L21/312

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device capable of attaining the further simplification of a manufacturing process.
SOLUTION: In the manufacturing method for the semiconductor device; an inorganic insulating layer 20 is formed to the upper section of a substrate 10; at least one kind of a treatment selected from an ultraviolet irradiation treatment, an electron-beam irradiation treatment, and a plasma treatment is conducted on the surface 20a of the insulating layer 20; and an organic insulating layer 40 is formed on the insulating layer 20. In the manufacturing method for the semiconductor device, a first opening section 72 is formed to the insulating layer 20, a second opening section 74 connected to the first opening section 72 is formed to the insulating layer 40, and a conductive layer 90 is buried to the first and second opening sections 72 and 74.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供能够进一步简化制造过程的半导体器件的制造方法。 解决方案：在半导体器件的制造方法中， 在基板10的上部形成有无机绝缘层20; 在绝缘层20的表面20a上进行至少一种选自紫外线照射处理，电子束照射处理和等离子体处理的处理; 在绝缘层20上形成有机绝缘层40.在半导体装置的制造方法中，在绝缘层20上形成有第一开口部72，与第一开口部72连接的第二开口部74形成 到绝缘层40，并且导电层90埋在第一和第二开口部分72和74中。版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005327852A

公开(公告)日：2005-11-24

申请号：JP2004143552

申请日：2004-05-13

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： YAMANAKA TATSUYA ,  KOKUBO TERUKAZU ,  SEKIGUCHI MANABU ,  MITA MICHIHIRO

IPC: H01L21/768 ,  H01L21/312 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To provide a lamination in which a silica based film and an organic based film are laminated and which is excellent in mechanical strength by increasing adhesiveness between the silica based film and the organic based film and has a low specific inductive capacity, and to provide a method for forming the lamination.
SOLUTION: The lamination contains the silica based film, a first organic based film, and a second organic based film. The first organic based film contains (A) at least one kind of compound selected from poly arylene, poly arylene ether, polybenzoxazoles, and polyimide, and contains (B) a polymer which is expressed by a general formula or has an iteration unit. The second organic based film contains (A) at least one kind of a compound selected from poly arylene, poly arylene ether, polybenzoxazoles, and polyimide. In the formula, R
1 is a hydrocarbon group of carbon numbers 1-5, and (a) is an integer of 2-1,000.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：为了提供层叠二氧化硅基膜和有机基膜的层压体，通过增加二氧化硅基膜和有机基膜之间的粘合性，其机械强度优异，并且具有低的 感应能力，并提供形成层压的方法。 解决方案：层压包含二氧化硅基膜，第一有机基膜和第二有机基膜。 第一有机基膜含有（A）选自聚亚芳基，聚亚芳基醚，聚苯并恶唑和聚酰亚胺中的至少一种化合物，并且包含（B）由通式表示或具有迭代单元的聚合物。 第二有机基膜含有（A）至少一种选自聚亚芳基，聚亚芳基醚，聚苯并恶唑和聚酰亚胺的化合物。 在该式中，R 1 SP 1是碳数为1〜5的烃基，（a）为2-1000的整数。 版权所有（C）2006，JPO＆NCIPI