Abstract:
Ein Wafer-Abtastsystem umfasst eine abbildende Sammeloptik, um die effektive Spotgröße zu reduzieren. Eine kleinere Spotgröße verringert die Anzahl der Photonen, die durch die Oberfläche proportional zur Fläche des Spots gestreut sind. Die Luftstreuung wird ebenfalls reduziert. TDI wird verwendet, um ein Waferbild zu erzeugen, das auf einer Vielzahl von Bildsignalen basiert, die über die Richtung der Linearbewegung des Wafers integriert sind. Ein Beleuchtungssystem überflutet den Wafer mit Licht, und die Aufgabe, den Spot zu erzeugen, wird der bildgebenden Sammeloptik zugeordnet.
Abstract:
A wafer scanning system includes imaging collection optics to reduce the effective spot size. Smaller spot size decreases the number of photons scattered by the surface proportionally to the area of the spot. Air scatter is also reduced. TDI is used to produce a wafer image based on a plurality of image signals integrated over the direction of linear motion of the wafer. An illumination system floods the wafer with light, and the task of creating the spot is allocated to the imaging collection optics.
Abstract:
Systems and methods for determining two or more characteristics of a wafer are provided. The two or more characteristics include a characteristic of the wafer that is spatially localized in at least one dimension and a characteristic of the wafer that is not spatially localized in two dimensions.
Abstract:
Systems configured to inspect a wafer are provided. One system includes an illumination subsystem configured to illuminate an area on the wafer by directing light to the wafer at an oblique angle of incidence. The system also includes a collection subsystem configured to simultaneously collect light scattered from different spots within the illuminated area and to focus the light collected from the different spots to corresponding positions in an image plane. In addition, the system includes a detection subsystem configured to separately detect the light focused to the corresponding positions in the image plane and to separately generate output responsive to the light focused to the corresponding positions in the image plane. The output can be used to detect defects on the wafer.
Abstract:
Computer-implemented methods for inspecting and/or classifying a wafer are provided. One computer-implemented includes detecting defects on a wafer using one or more defect detection parameters, which are determined based on a non-spatially localized characteristic of the wafer that is determined using output responsive to light scattered from the wafer generated by an inspection system. Another computer-implemented method includes classifying a wafer based on a combination of a non-spatially localized characteristic of the wafer determined using output responsive to light scattered from the wafer generated by an inspection system and a spatially localized characteristic of the wafer determined using the output.