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    MULTI-SPOT ANALYSIS SYSTEM WITH MULTIPLE OPTICAL PROBES
    1.
    发明专利
    MULTI-SPOT ANALYSIS SYSTEM WITH MULTIPLE OPTICAL PROBES 未知

    公开(公告)号：SG11202010081VA

    公开(公告)日：2020-11-27

    申请号：SG11202010081V

    申请日：2019-04-12

    Applicant: KLA TENCOR CORP

    Inventor： DIGHE PRASANNA ,  MUELLER DIETER ,  CHEN DONG ,  CHEN DENGPENG ,  ZAMEK STEVE ,  KAVALDJIEV DANIEL ,  BUETTNER ALEXANDER

    IPC: G01N21/47 ,  G01N21/41

    Abstract: A system for analyzing a sample includes an illumination source with a plurality of transmitting optical fibers optically coupled to the illumination source and a detector with a plurality of receiving optical fibers optically coupled to the detector. The system further includes a plurality of probes coupled to respective ones of the plurality of transmitting optical fibers and respective ones of the plurality of receiving optical fibers. The plurality of probes are configured to illuminate respective portions of a surface of the sample and configured to receive illumination reflected, refracted, or radiated from the respective portions of the surface of the sample. The system may further include one or more switches and/or splitters configured to optically couple respective ones of the plurality of transmitting optical fibers to the illumination source and/or configured to optically couple respective ones of the plurality of receiving optical fibers to the detector.

    PROCESS-INDUCED DISPLACEMENT CHARACTERIZATION DURING SEMICONDUCTOR PRODUCTION
    2.
    发明专利
    PROCESS-INDUCED DISPLACEMENT CHARACTERIZATION DURING SEMICONDUCTOR PRODUCTION 未知

    公开(公告)号：SG11202010083TA

    公开(公告)日：2020-11-27

    申请号：SG11202010083T

    申请日：2018-12-20

    Applicant: KLA TENCOR CORP

    Inventor： VUKKADALA PRADEEP ,  SMITH MARK D ,  LEVY ADY ,  DIGHE PRASANNA ,  MUELLER DIETER

    IPC: H01L21/67 ,  H01L21/033

    Abstract: A controller is configured to perform at least a first characterization process prior to at least one discrete backside film deposition process on a semiconductor wafer; perform at least an additional characterization process following the at least one discrete backside film deposition process; determine at least one of a film force or one or more in-plane displacements for at least one discrete backside film deposited on the semiconductor wafer via the at least one discrete backside film deposition process based on the at least the first characterization process and the at least the additional characterization process; and provide at least one of the film force or the one or more in-plane displacements to at least one process tool via at least one of a feed forward loop or a feedback loop to improve performance of one or more fabrication processes.

    COMPUTER-IMPLEMENTED METHODS FOR INSPECTING AND/OR CLASSIFYING A WAFER
    3.
    发明申请
    COMPUTER-IMPLEMENTED METHODS FOR INSPECTING AND/OR CLASSIFYING A WAFER 审中-公开
    用于检查和/或分类WAFER的计算机实现方法

    公开(公告)号：WO2010011578A3

    公开(公告)日：2010-04-22

    申请号：PCT/US2009051044

    申请日：2009-07-17

    Applicant: KLA TENCOR CORP ,  REICH JUERGEN ,  VINTRO LOUIS ,  DIGHE PRASANNA ,  STEINBACH ANDREW ,  KAVALDJIEV DANIEL ,  BIELLAK STEPHEN

    Inventor： REICH JUERGEN ,  VINTRO LOUIS ,  DIGHE PRASANNA ,  STEINBACH ANDREW ,  KAVALDJIEV DANIEL ,  BIELLAK STEPHEN

    IPC: H01L21/66

    CPC classification number: H01L22/12 ,  G01N21/9501 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Computer-implemented methods for inspecting and/or classifying a wafer are provided. One computer-implemented includes detecting defects on a wafer using one or more defect detection parameters, which are determined based on a non-spatially localized characteristic of the wafer that is determined using output responsive to light scattered from the wafer generated by an inspection system. Another computer-implemented method includes classifying a wafer based on a combination of a non-spatially localized characteristic of the wafer determined using output responsive to light scattered from the wafer generated by an inspection system and a spatially localized characteristic of the wafer determined using the output.

    Abstract translation: 提供了用于检查和/或分类晶片的计算机实现的方法。 一种计算机实现的包括使用一个或多个缺陷检测参数来检测晶片上的缺陷，所述缺陷检测参数是基于使用响应于由检查系统产生的晶片散射的光的输出而确定的晶片的非空间局部特征确定的。 另一种计算机实现的方法包括基于使用响应于由检查系统产生的晶片散射的光的输出确定的晶片的非空间局部化特性的组合，以及使用输出确定的晶片的空间局部化特性 。

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