公开(公告)号：JP2011141288A

公开(公告)日：2011-07-21

申请号：JP2011055357

申请日：2011-03-14

Applicant: Kla-Tencor Corp ,  ケーエルエー−テンカー コーポレイション

Inventor： LEE SHING ,  WANG HAIMING ,  NORTON ADAM ,  NIKOONAHAD MEHRDAD

IPC: G01B11/06 ,  G01N21/21 ,  G01J3/447 ,  G01J4/02 ,  G01J4/04 ,  G01N21/27 ,  G01N21/41

CPC classification number: G01J4/02 ,  G01J3/447 ,  G01N21/21

Abstract: PROBLEM TO BE SOLVED: To provide a system which relates to a non-destructive technology for measuring a surface parameter of a sample for measuring the birefringence of a surface, a film thickness, etc. using a polarimetric spectrum. SOLUTION: A polarized sample beam 46 of broadband radiation is focused to the surface of a sample 3 and the radiation polarized by the sample is collected by a mirror system in different planes of incidence. The modulated radiation is analyzed with respect to a polarization plane to provide a polarimetric spectrum. Thickness and refractive information may then be derived from the spectrum. The polarization of the sample beam is altered by the focusing and the sample, and the collection of the modulated radiation is repeated employing two different apertures 28 to detect the presence or absence of a birefringence axis in the sample. In the other preferred embodiment, the technology may be combined with ellipsometry for determining the thicknesses and refractive indices of thin films. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种涉及用于测量样品的表面参数的非破坏性技术的系统，用于使用偏振光谱测量表面的双折射，膜厚等。 解决方案：将宽带辐射的极化样品束46聚焦到样品3的表面，并且由样品偏振的辐射由不同入射平面中的反射镜系统收集。 相对于偏振平面分析调制的辐射以提供偏振光谱。 然后可以从光谱导出厚度和折射信息。 通过聚焦和样品改变样品光束的偏振，并且重复使用两个不同的孔28来检测调制的辐射的收集，以检测样品中双折射轴的存在或不存在。 在另一个优选实施例中，该技术可以与用于确定薄膜的厚度和折射率的椭偏仪相结合。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：WO03003422A3

公开(公告)日：2003-02-27

申请号：PCT/US0220765

申请日：2002-06-27

Applicant: KLA TENCOR CORP

Inventor： CHEN HAIGUANG ,  LEE SHING

IPC: B24B37/013 ,  B24B49/12 ,  H01L21/00 ,  B24B49/00 ,  B24B51/00 ,  G01R31/26

CPC classification number: B24B37/013 ,  B24B49/12

Abstract: The present invention relates to in-situ techniques for determining process end points in semiconductor wafer polishing processes. Generally, the technique involves utilizing a scanning inspection machine having multiple pair of lasers and sensors located at different angles for detecting signals caused to emanate from an inspected specimen. The detection techniques determine the end points by differentiating between various material properties within a wafer. An accompanying algorithm is used to obtain an end point detection curve (608) that represents a composite representation of the signals obtained from each of the detectors of the inspection machine. This end point detection curve (608) is then used to determine the process end point (614). Note that computation of the algorithm (610, 612) is performed during the polishing process so that the process end point can be determined without interruptions that diminish process throughputs.

Abstract translation: 本发明涉及用于确定半导体晶片抛光工艺中的工艺终点的现场技术。 通常，该技术涉及利用具有多对激光器和位于不同角度的传感器的扫描检查机，以检测从检查样品发出的信号。 检测技术通过区分晶片内的各种材料特性来确定端点。 使用伴随的算法来获得终点检测曲线（608），其表示从检查机的每个检测器获得的信号的复合表示。 然后，该终点检测曲线（608）用于确定过程终点（614）。 注意，在抛光过程期间执行算法（610,612）的计算，使得可以确定处理结束点而不会导致处理吞吐量减少的中断。

公开(公告)号：DE69922491D1

公开(公告)日：2005-01-13

申请号：DE69922491

申请日：1999-02-08

Applicant: KLA TENCOR CORP

Inventor： NIKOONAHAD MEHRDAD ,  LEE SHING ,  WANG HAIMING

IPC: G01B21/08 ,  G01B17/02 ,  G01N29/00 ,  G01N29/24 ,  G01N29/34

Abstract: Thickness of a film in a sample may be detected by directing pump laser pulses to the surface of a sample to generate an acoustic pulse in a sample. The acoustic pulse propagates downwards until it reaches an interface between the bottom of the film and a substrate and is reflected back to the top surface of the film as a first echo. A reflection of the first echo propagates downwards and is again reflected back towards the surface as a second echo. Interferometry is used to measure the lapse of time between the first and second echos from which the thickness of the film may be determined.

公开(公告)号：AU2591799A

公开(公告)日：1999-09-15

申请号：AU2591799

申请日：1999-02-08

Applicant: KLA TENCOR CORP

Inventor： NIKOONAHAD MEHRDAD ,  LEE SHING ,  WANG HAIMING

IPC: G01B21/08 ,  G01B17/02 ,  G01N29/00 ,  G01N29/24 ,  G01N29/34

Abstract: Thickness of a film in a sample may be detected by directing pump laser pulses to the surface of a sample to generate an acoustic pulse in a sample. The acoustic pulse propagates downwards until it reaches an interface between the bottom of the film and a substrate and is reflected back to the top surface of the film as a first echo. A reflection of the first echo propagates downwards and is again reflected back towards the surface as a second echo. Interferometry is used to measure the lapse of time between the first and second echos from which the thickness of the film may be determined.

公开(公告)号：WO0120304A3

公开(公告)日：2001-10-04

申请号：PCT/US0024888

申请日：2000-09-11

Applicant: KLA TENCOR CORP

Inventor： NIKOONAHAD MEHRDAD ,  LEE SHING ,  KELE KALMAN ,  ZHAO GUOHENG ,  LEHMAN KURT R

IPC: B24B37/005 ,  B24B49/12 ,  B24D7/12 ,  G01B11/00 ,  G01B11/06 ,  G01N1/32 ,  G01N1/34 ,  G01N21/00 ,  G01N21/15 ,  G01N21/21 ,  G01N21/45 ,  G01N21/47 ,  H01L21/304 ,  B24B37/04

CPC classification number: G01N21/15 ,  B24B37/005 ,  B24B49/12 ,  B24D7/12 ,  G01B11/00 ,  G01B11/0683

Abstract: Disclosed is a self-clearing objective (100) for directing a beam towards a sample and clearing away debris from an optical viewing path adjacent to the sample. The self-clearing objective includes an optical element (106, 210, 310, 408, 510) and a substantially transparent fluid (104, 213, 326, 512) flowing between the optical element and the sample such that at least a portion adjacent to the sample is substantially cleared of debris. The optical element and the fluid cooperatively direct the beam towards the sample. This self-clearing objective may be coupled with various measurement devices to measure various characteristics of samples having debris that prevents clear optical measurements. Additionally, the measurement device may be integrated with or coupled to various sample processing systems so that the relevant process may be clearly monitored.

Abstract translation: 公开了一种用于将光束引向样品并从邻近样品的光学观察路径清除碎屑的自清除目标（100）。 自清理物镜包括在光学元件和样品之间流动的光学元件（106,210,310,408,510）和基本上透明的流体（104,213,326,512），使得至少一部分邻近 样品基本上清除了碎片。 光学元件和流体协调地将光束引向样品。 这种自清除物镜可以与各种测量装置耦合，以测量具有防止清晰光学测量的碎片的样品的各种特性。 此外，测量装置可以与各种样品处理系统集成或耦合到可以清楚地监测相关过程。

公开(公告)号：WO0047961A9

公开(公告)日：2001-10-25

申请号：PCT/US0003290

申请日：2000-02-09

Applicant: KLA TENCOR CORP

Inventor： LEE SHING ,  WANG HAIMING ,  NORTON ADAM ,  NIKOONAHAD MEHRDAD

IPC: G01B11/06 ,  G01J3/447 ,  G01J4/02 ,  G01J4/04 ,  G01N21/21 ,  G01N21/41 ,  G01J4/00

CPC classification number: G01J4/02 ,  G01J3/447 ,  G01N21/21

Abstract: A polarized sample beam (12) of broadband radiation is focused onto the surface of a sample (3) and the radiation modified by the sample is collected by means of a mirror system (16) in different planes of incidence. The sample beam focused to the sample has a multitude of polarization states. The modified radiation is analyzed with respect to a polarization plane to provide a polarimetric spectrum. Preferably the polarization of the sample beam is altered only by the focusing and the sample, and the analyzing is done with respect to a fixed polarization plane. In the preferred embodiment, the focusing of the sample beam and the collection of the modified radiation are repeated employing two different apertures (30) to detect the presence or absence of a birefringence axis in the sample. In another preferred embodiment, the above-described technique may be combined with ellipsometry for determining the thickness and refractive indices of thin films.

Abstract translation: 将宽带辐射的偏振样品束（12）聚焦到样品（3）的表面上，并且通过不同入射平面的反射镜系统（16）收集由样品改性的辐射。 聚焦到样品的样品束具有许多极化状态。 相对于偏振平面分析修改的辐射以提供偏振光谱。 优选地，样品光束的偏振仅由聚焦和样品改变，并且相对于固定的偏振平面进行分析。 在优选实施例中，采用两个不同的孔（30）来重复样品束的聚焦和修改的辐射的收集，以检测样品中双折射轴的存在或不存在。 在另一个优选实施例中，上述技术可以与用于确定薄膜的厚度和折射率的椭偏仪组合。