公开(公告)号：WO2007053376A2

公开(公告)日：2007-05-10

申请号：PCT/US2006041514

申请日：2006-10-23

Applicant: KLA TENCOR TECH CORP ,  LEVINSKI VLADIMIR ,  ADEL MICHAEL E ,  FROMMER AVIV ,  KANDEL DANIEL

Inventor： LEVINSKI VLADIMIR ,  ADEL MICHAEL E ,  FROMMER AVIV ,  KANDEL DANIEL

IPC: H01L23/58 ,  H01L21/66

CPC classification number: H01L23/544 ,  G03F7/70633 ,  H01L22/12 ,  H01L2223/54453 ,  H01L2223/5448 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods and apparatus for fabricating a semiconductor die including several target structures. A first layer is formed that includes one or more line or trench structures that extend in a first direction. A second layer is formed that includes one or more line or trench structures that extend in a second direction that is perpendicular to the first structure, such that a projection of the target structure along the first direction is independent of the second direction and a projection of the target structure along the second direction is independent of the first direction. A target structure and a method for generating a calibration curve are also described.

Abstract translation: 用于制造包括几个目标结构的半导体管芯的方法和装置。 形成第一层，其包括在第一方向上延伸的一个或多个线或沟槽结构。 形成第二层，其包括在垂直于第一结构的第二方向上延伸的一个或多个线或沟槽结构，使得目标结构沿着第一方向的突起独立于第二方向和投影 沿着第二方向的目标结构与第一方向无关。 还描述了用于产生校准曲线的目标结构和方法。

公开(公告)号：WO2007061704A3

公开(公告)日：2009-05-22

申请号：PCT/US2006044259

申请日：2006-11-13

Applicant: KLA TENCOR TECH CORP ,  ADEL MICHAEL ,  FROMMER AVIV

Inventor： ADEL MICHAEL ,  FROMMER AVIV

IPC: G01B11/00

CPC classification number: G01N21/956 ,  G01N2021/213 ,  G03F7/70633

Abstract: A method and tool for conducting NIR overlay metrology is disclosed. Such methods involve generating a filtered illumination beam including NIR radiation and directing that illumination beam onto an overlay target to produce an optical signal that is detected and used to generate overlay metrology measurements. The method is particularly suited to substrate applications having layers of opaque material that are transmissive in the NIR range (e.g., amorphous carbon) and where NTR imaging is used to obtain overlay measurements. A tool implementation includes a means for generating a filtered illumination beam extending into the NIR range and a detector for receiving NIR signal from an NIR illuminated target and a computer for processing the signal data to obtain overlay metrology measurements.

Abstract translation: 公开了一种用于进行NIR重叠测量的方法和工具。 这种方法涉及产生包括NIR辐射的滤波照明光束并将该照明光束引导到覆盖目标上以产生被检测并用于产生覆盖度量测量的光信号。 该方法特别适用于具有在NIR范围（例如无定形碳）中透射的不透明材料层的衬底应用，并且其中使用NTR成像来获得覆盖测量。 工具实现包括用于产生延伸到NIR范围内的滤波照明光束的装置和用于从NIR照明目标接收NIR信号的检测器和用于处理信号数据以获得覆盖度量测量的计算机。

公开(公告)号：WO2006094021A3

公开(公告)日：2007-01-11

申请号：PCT/US2006007195

申请日：2006-02-28

Applicant: KLA TENCOR TECH CORP ,  FROMMER AVIV ,  LEVINSKI VLADIMIR ,  SMITH MARK D ,  BYERS JEFFREY ,  MACK CHRIS A ,  ADEL MICHAEL E

Inventor： FROMMER AVIV ,  LEVINSKI VLADIMIR ,  SMITH MARK D ,  BYERS JEFFREY ,  MACK CHRIS A ,  ADEL MICHAEL E

IPC: G01B11/00

CPC classification number: G03F9/7049 ,  G03F7/70633 ,  G03F9/7088

Abstract: A system for imaging an acquisition target or an overlay or alignment semiconductor target (404) is disclosed. The system includes a beam generator for directing at least one incident beam (402) having a wavelength lamda towards a periodic target (404) having structures with a specific pitch p. A plurality of output beams (406) are scattered from the periodic target (404) in response to the at least one incident beam (402). The system further includes an imaging lens system (410) for passing only a first and second output beam (412a, 412b) from the target (404). The imaging system is adapted such that the angular separation between the captured beams, lamda, and the pitch are selected to cause the first and second output beams (412a, 412b) to form a sinusoidal image (414). The system also includes a sensor for imaging the sinusoidal image or images (414), and a controller for causing the beam generator to direct the at least one incident beam (402) towards the periodic target or targets (404), and for analyzing the sinusoidal image or images (414).

Abstract translation: 公开了一种用于对采集目标或覆盖或对准半导体目标进行成像的系统（404）。 该系统包括用于将具有波长兰达的至少一个入射光束（402）朝向具有特定间距p的结构的周期性靶（404）引导的光束发生器。 响应于至少一个入射光束（402），多个输出光束（406）从周期性靶标（404）散射。 该系统还包括用于仅使来自目标物（404）的第一和第二输出光束（412a，412b）通过的成像透镜系统（410）。 成像系统被适配成使得捕获的光束，兰达和间距之间的角度间隔被选择以使得第一和第二输出光束（412a，412b）形成正弦图像（414）。 该系统还包括用于对正弦图像或图像进行成像的传感器（414），以及控制器，用于使光束发生器将至少一个入射光束（402）引向周期性目标（404），并且用于分析 正弦图像或图像（414）。

公开(公告)号：EP1946372A4

公开(公告)日：2011-01-05

申请号：EP06817348

申请日：2006-10-23

Applicant: KLA TENCOR TECH CORP

Inventor： LEVINSKI VLADIMIR ,  ADEL MICHAEL E ,  FROMMER AVIV ,  KANDEL DANIEL

IPC: G06F17/50 ,  G03F7/20

CPC classification number: H01L23/544 ,  G03F7/70633 ,  H01L22/12 ,  H01L2223/54453 ,  H01L2223/5448 ,  H01L2924/0002 ,  H01L2924/00