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    ORDER SELECTED OVERLAY METROLOGY
    1.
    发明申请
    ORDER SELECTED OVERLAY METROLOGY 审中-公开
    订单选择重叠度量

    公开(公告)号：WO2007143056A2

    公开(公告)日：2007-12-13

    申请号：PCT/US2007012875

    申请日：2007-05-31

    Applicant: KLA TENCOR TECH CORP ,  KANDEL DANIEL ,  LEVINSKI VLADIMIR ,  ADEL MICHAEL E ,  SELIGSON JOEL L

    Inventor： KANDEL DANIEL ,  LEVINSKI VLADIMIR ,  ADEL MICHAEL E ,  SELIGSON JOEL L

    IPC: G01B11/00

    CPC classification number: G03F7/70633

    Abstract: Disclosed are apparatus and methods for measuring a characteristic, such as overlay, of a semiconductor target. In general, order-selected imaging and/or illumination is performed while collecting an image from a target using a metrology system. In one implementation, tunable spatial modulation is provided only in the imaging path of the system. In other implementations, tunable spatial modulation is provided in both the illumination and imaging paths of the system. In a specific implementation, tunable spatial modulation is used to image side-by-side gratings with diffraction orders ±n. The side-by-side gratings may be in different layers or the same layer of a semiconductor wafer. The overlay between the structures is typically found by measuring the distance between centers symmetry of the gratings. In this embodiment, only orders ±n for a given choice of n (where n is an integer and not equal to zero) are selected, and the gratings are only imaged with these diffraction orders.

    Abstract translation: 公开了用于测量半导体靶的特性（例如覆盖）的装置和方法。 通常，在使用度量系统从目标物收集图像的同时执行顺序选择的成像和/或照明。 在一个实现中，仅在系统的成像路径中提供可调谐空间调制。 在其他实施方式中，在系统的照明和成像路径中提供可调谐的空间调制。 在具体实现中，可调谐空间调制用于以衍射级±n对并行光栅进行成像。 并排光栅可以在不同的层或相同的半导体晶片层中。 通常通过测量光栅的中心对称性之间的距离来发现结构之间的覆盖。 在本实施例中，对于给定的n（其中n是整数且不等于零）的选择，仅选择±n，并且光栅仅以这些衍射级成像。

    APPARATUS AND METHOD FOR DETECTING OVERLAY ERRORS USING SCATTEROMETRY
    2.
    发明申请
    APPARATUS AND METHOD FOR DETECTING OVERLAY ERRORS USING SCATTEROMETRY 审中-公开
    利用测距法检测覆盖误差的装置和方法

    公开(公告)号：WO2007126559A3

    公开(公告)日：2007-12-21

    申请号：PCT/US2007006031

    申请日：2007-03-08

    Applicant: KLA TENCOR TECH CORP ,  KANDEL DANIEL ,  MIEHER WALTER D ,  GOLOVANEVSKY BORIS

    Inventor： KANDEL DANIEL ,  MIEHER WALTER D ,  GOLOVANEVSKY BORIS

    IPC: G01B11/00

    CPC classification number: G03F7/70633

    Abstract: Embodiments of the invention include a scatterometry target for use in determining the alignment between substrate layers. A target arrangement is formed on a substrate and comprises a plurality of target cells. Each cell has two layers of periodic features constructed such that an upper layer is arranged above a lower layer and configured so that the periodic features of the upper layer have an offset and/or different pitch than periodic features of the lower layer. The pitches are arranged to generate a periodic signal when the target is exposed to an illumination source. The target also includes disambiguation features arranged between the cells and configured to resolve ambiguities caused by the periodic signals generated by the cells when exposed to the illumination source.

    Abstract translation: 本发明的实施例包括用于确定衬底层之间的对准的散射测量目标。 目标装置形成在衬底上并且包括多个目标单元。 每个单元具有两层周期性特征，所述两层周期性特征构造成使得上层布置在下层之上并且被配置为使得上层的周期性特征具有与下层的周期性特征相比偏移和/或不同的间距。 当目标暴露于照明源时，间距被安排成产生周期性信号。 目标还包括排列在单元之间的消歧特征，并且被配置为解决由单元在暴露于照明源时产生的周期性信号引起的歧义。

    MEASURING OVERLAY AND PROFILE ASYMMETRY USING SYMMETRIC AND ANTI-SYMMETRIC SCATTEROMETRY SIGNALS
    3.
    发明申请
    MEASURING OVERLAY AND PROFILE ASYMMETRY USING SYMMETRIC AND ANTI-SYMMETRIC SCATTEROMETRY SIGNALS 审中-公开
    使用对称和对称分析信号测量覆盖和轮廓不对称

    公开(公告)号：WO2006133258A3

    公开(公告)日：2007-03-29

    申请号：PCT/US2006022059

    申请日：2006-06-06

    Applicant: KLA TENCOR TECH CORP ,  KANDEL DANIEL ,  GROSS KEN ,  FRIEDMANN MICHAEL ,  FU JIYOU ,  KRISHNAN SHANKAR ,  GOLOVANEVSKY BORIS

    Inventor： KANDEL DANIEL ,  GROSS KEN ,  FRIEDMANN MICHAEL ,  FU JIYOU ,  KRISHNAN SHANKAR ,  GOLOVANEVSKY BORIS

    IPC: G01J4/00

    CPC classification number: G01N21/211 ,  G01N21/9501 ,  G01N21/956 ,  G03F7/70633

    Abstract: Systems and methods are disclosed for using ellipsometer configurations to measure the partial Mueller matrix and the complete Jones matrix of a system that may be isotropic or anisotropic. In one embodiment two or more signals, which do not necessarily satisfy any symmetry assumptions individually, are combined into a composite signal which satisfies a symmetry assumption. The individual signals are collected at two or more analyzer angles. Symmetry properties of the composite signals allow easy extraction of overlay information for any relative orientation of the incident light beam with respect to a ID grating target, as well as for targets comprising general 2D gratings. Signals of a certain symmetry property also allow measurement of profile asymmetry in a very efficient manner. In another embodiment a measurement methodology is defined to measure only signals which satisfy a symmetry assumption. An optional embodiment comprises a single polarization element serving as polarizer (111) and analyzer (115). Another optional embodiment uses an analyzing prism (144) to simultaneously collect two polarization components of reflected light.

    Abstract translation: 公开了使用椭偏仪配置来测量可能是各向同性或各向异性的系统的部分Mueller矩阵和完整琼斯矩阵的系统和方法。 在一个实施例中，不一定满足任何对称假设的两个或更多个信号被组合成满足对称假设的复合信号。 各个信号以两个或多个分析器角度收集。 复合信号的对称属性允许容易地提取用于入射光束相对于ID光栅目标的任何相对取向以及包括通用2D光栅的目标的覆盖信息。 具有某种对称性质的信号也可以以非常有效的方式测量轮廓不对称。 在另一个实施例中，测量方法被定义为仅测量满足对称假设的信号。 可选实施例包括用作偏振器（111）和分析器（115）的单个偏振元件。 另一个可选实施例使用分析棱镜（144）同时收集反射光的两个偏振分量。

    METHODS AND APPARATUS FOR DESIGNING AND USING MICRO-TARGETS IN OVERLAY METROLOGY
    4.
    发明申请
    METHODS AND APPARATUS FOR DESIGNING AND USING MICRO-TARGETS IN OVERLAY METROLOGY 审中-公开
    用于设计和使用覆盖层计量中的微目标的方法和装置

    公开(公告)号：WO2007053376A2

    公开(公告)日：2007-05-10

    申请号：PCT/US2006041514

    申请日：2006-10-23

    Applicant: KLA TENCOR TECH CORP ,  LEVINSKI VLADIMIR ,  ADEL MICHAEL E ,  FROMMER AVIV ,  KANDEL DANIEL

    Inventor： LEVINSKI VLADIMIR ,  ADEL MICHAEL E ,  FROMMER AVIV ,  KANDEL DANIEL

    IPC: H01L23/58 ,  H01L21/66

    CPC classification number: H01L23/544 ,  G03F7/70633 ,  H01L22/12 ,  H01L2223/54453 ,  H01L2223/5448 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Methods and apparatus for fabricating a semiconductor die including several target structures. A first layer is formed that includes one or more line or trench structures that extend in a first direction. A second layer is formed that includes one or more line or trench structures that extend in a second direction that is perpendicular to the first structure, such that a projection of the target structure along the first direction is independent of the second direction and a projection of the target structure along the second direction is independent of the first direction. A target structure and a method for generating a calibration curve are also described.

    Abstract translation: 用于制造包括几个目标结构的半导体管芯的方法和装置。 形成第一层，其包括在第一方向上延伸的一个或多个线或沟槽结构。 形成第二层，其包括在垂直于第一结构的第二方向上延伸的一个或多个线或沟槽结构，使得目标结构沿着第一方向的突起独立于第二方向和投影 沿着第二方向的目标结构与第一方向无关。 还描述了用于产生校准曲线的目标结构和方法。

    CONTINUOUSLY VARYING OFFSET MARK AND METHODS OF DETERMINING OVERLAY
    5.
    发明申请
    CONTINUOUSLY VARYING OFFSET MARK AND METHODS OF DETERMINING OVERLAY 审中-公开
    连续不断变化的标记和确定覆盖方法

    公开(公告)号：WO2005079498A3

    公开(公告)日：2006-08-03

    申请号：PCT/US2005005253

    申请日：2005-02-17

    Applicant: KLA TENCOR TECH CORP ,  ADEL MICHAEL E ,  SELIGSON JOEL L ,  KANDEL DANIEL

    Inventor： ADEL MICHAEL E ,  SELIGSON JOEL L ,  KANDEL DANIEL

    IPC: G01B11/00 ,  G03F7/00 ,  G03F7/20 ,  H01L21/66 ,  H01L21/76 ,  H01L23/544

    CPC classification number: G03F7/70683 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/70633 ,  H01L22/12

    Abstract: The present invention relates to overlay marks and methods for determining overlay error. One aspect of the present invention relates to a continuously varying offset mark. The continuously varying offset mark is a single mark that includes over laid periodic structures, which have offsets that vary as a function of position. By way of example, the periodic structures may correspond to gratings with different values of a grating characteristic such as pitch. Another aspect of the present invention relates to methods for determining overlay error from the continuously varying offset mark. The method generally includes determining the center of symmetry of the continuously varying offset mark and comparing it to the geometric center of the mark. If there is zero overlay, the center of symmetry tends to coincide with the geometric center of the mark. If overlay is non zero (e.g., misalignment between two layers), the center of symmetry is displaced from the geometric center of the mark. The displacement in conjunction with the preset gain of the continuously varying offset mark is used to calculate the overlay error.

    Abstract translation: 本发明涉及用于确定覆盖误差的覆盖标记和方法。 本发明的一个方面涉及连续变化的偏移标记。 连续变化的偏移标记是单个标记，其包括覆盖周期性结构，其具有作为位置的函数而变化的偏移。 作为示例，周期性结构可以对应于具有诸如间距的光栅特性的不同值的光栅。 本发明的另一方面涉及用于从连续变化的偏移标记确定覆盖误差的方法。 该方法通常包括确定连续变化的偏移标记的对称中心并将其与标记的几何中心进行比较。 如果零覆盖，则对称中心倾向于与标记的几何中心一致。 如果覆盖层不为零（例如，两层之间的未对准），则对称中心从标记的几何中心位移。 结合连续变化的偏移标记的预设增益的位移用于计算重叠误差。

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