公开(公告)号：WO2007143056A2

公开(公告)日：2007-12-13

申请号：PCT/US2007012875

申请日：2007-05-31

Applicant: KLA TENCOR TECH CORP ,  KANDEL DANIEL ,  LEVINSKI VLADIMIR ,  ADEL MICHAEL E ,  SELIGSON JOEL L

Inventor： KANDEL DANIEL ,  LEVINSKI VLADIMIR ,  ADEL MICHAEL E ,  SELIGSON JOEL L

IPC: G01B11/00

CPC classification number: G03F7/70633

Abstract: Disclosed are apparatus and methods for measuring a characteristic, such as overlay, of a semiconductor target. In general, order-selected imaging and/or illumination is performed while collecting an image from a target using a metrology system. In one implementation, tunable spatial modulation is provided only in the imaging path of the system. In other implementations, tunable spatial modulation is provided in both the illumination and imaging paths of the system. In a specific implementation, tunable spatial modulation is used to image side-by-side gratings with diffraction orders ±n. The side-by-side gratings may be in different layers or the same layer of a semiconductor wafer. The overlay between the structures is typically found by measuring the distance between centers symmetry of the gratings. In this embodiment, only orders ±n for a given choice of n (where n is an integer and not equal to zero) are selected, and the gratings are only imaged with these diffraction orders.

Abstract translation: 公开了用于测量半导体靶的特性（例如覆盖）的装置和方法。 通常，在使用度量系统从目标物收集图像的同时执行顺序选择的成像和/或照明。 在一个实现中，仅在系统的成像路径中提供可调谐空间调制。 在其他实施方式中，在系统的照明和成像路径中提供可调谐的空间调制。 在具体实现中，可调谐空间调制用于以衍射级±n对并行光栅进行成像。 并排光栅可以在不同的层或相同的半导体晶片层中。 通常通过测量光栅的中心对称性之间的距离来发现结构之间的覆盖。 在本实施例中，对于给定的n（其中n是整数且不等于零）的选择，仅选择±n，并且光栅仅以这些衍射级成像。

公开(公告)号：WO2006094021A3

公开(公告)日：2007-01-11

申请号：PCT/US2006007195

申请日：2006-02-28

Applicant: KLA TENCOR TECH CORP ,  FROMMER AVIV ,  LEVINSKI VLADIMIR ,  SMITH MARK D ,  BYERS JEFFREY ,  MACK CHRIS A ,  ADEL MICHAEL E

Inventor： FROMMER AVIV ,  LEVINSKI VLADIMIR ,  SMITH MARK D ,  BYERS JEFFREY ,  MACK CHRIS A ,  ADEL MICHAEL E

IPC: G01B11/00

CPC classification number: G03F9/7049 ,  G03F7/70633 ,  G03F9/7088

Abstract: A system for imaging an acquisition target or an overlay or alignment semiconductor target (404) is disclosed. The system includes a beam generator for directing at least one incident beam (402) having a wavelength lamda towards a periodic target (404) having structures with a specific pitch p. A plurality of output beams (406) are scattered from the periodic target (404) in response to the at least one incident beam (402). The system further includes an imaging lens system (410) for passing only a first and second output beam (412a, 412b) from the target (404). The imaging system is adapted such that the angular separation between the captured beams, lamda, and the pitch are selected to cause the first and second output beams (412a, 412b) to form a sinusoidal image (414). The system also includes a sensor for imaging the sinusoidal image or images (414), and a controller for causing the beam generator to direct the at least one incident beam (402) towards the periodic target or targets (404), and for analyzing the sinusoidal image or images (414).

Abstract translation: 公开了一种用于对采集目标或覆盖或对准半导体目标进行成像的系统（404）。 该系统包括用于将具有波长兰达的至少一个入射光束（402）朝向具有特定间距p的结构的周期性靶（404）引导的光束发生器。 响应于至少一个入射光束（402），多个输出光束（406）从周期性靶标（404）散射。 该系统还包括用于仅使来自目标物（404）的第一和第二输出光束（412a，412b）通过的成像透镜系统（410）。 成像系统被适配成使得捕获的光束，兰达和间距之间的角度间隔被选择以使得第一和第二输出光束（412a，412b）形成正弦图像（414）。 该系统还包括用于对正弦图像或图像进行成像的传感器（414），以及控制器，用于使光束发生器将至少一个入射光束（402）引向周期性目标（404），并且用于分析 正弦图像或图像（414）。

公开(公告)号：WO2007053376A2

公开(公告)日：2007-05-10

申请号：PCT/US2006041514

申请日：2006-10-23

Applicant: KLA TENCOR TECH CORP ,  LEVINSKI VLADIMIR ,  ADEL MICHAEL E ,  FROMMER AVIV ,  KANDEL DANIEL

Inventor： LEVINSKI VLADIMIR ,  ADEL MICHAEL E ,  FROMMER AVIV ,  KANDEL DANIEL

IPC: H01L23/58 ,  H01L21/66

CPC classification number: H01L23/544 ,  G03F7/70633 ,  H01L22/12 ,  H01L2223/54453 ,  H01L2223/5448 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods and apparatus for fabricating a semiconductor die including several target structures. A first layer is formed that includes one or more line or trench structures that extend in a first direction. A second layer is formed that includes one or more line or trench structures that extend in a second direction that is perpendicular to the first structure, such that a projection of the target structure along the first direction is independent of the second direction and a projection of the target structure along the second direction is independent of the first direction. A target structure and a method for generating a calibration curve are also described.

Abstract translation: 用于制造包括几个目标结构的半导体管芯的方法和装置。 形成第一层，其包括在第一方向上延伸的一个或多个线或沟槽结构。 形成第二层，其包括在垂直于第一结构的第二方向上延伸的一个或多个线或沟槽结构，使得目标结构沿着第一方向的突起独立于第二方向和投影 沿着第二方向的目标结构与第一方向无关。 还描述了用于产生校准曲线的目标结构和方法。

公开(公告)号：EP1946372A4

公开(公告)日：2011-01-05

申请号：EP06817348

申请日：2006-10-23

Applicant: KLA TENCOR TECH CORP

Inventor： LEVINSKI VLADIMIR ,  ADEL MICHAEL E ,  FROMMER AVIV ,  KANDEL DANIEL

IPC: G06F17/50 ,  G03F7/20

CPC classification number: H01L23/544 ,  G03F7/70633 ,  H01L22/12 ,  H01L2223/54453 ,  H01L2223/5448 ,  H01L2924/0002 ,  H01L2924/00