公开(公告)号：WO2007053376A2

公开(公告)日：2007-05-10

申请号：PCT/US2006041514

申请日：2006-10-23

Applicant: KLA TENCOR TECH CORP ,  LEVINSKI VLADIMIR ,  ADEL MICHAEL E ,  FROMMER AVIV ,  KANDEL DANIEL

Inventor： LEVINSKI VLADIMIR ,  ADEL MICHAEL E ,  FROMMER AVIV ,  KANDEL DANIEL

IPC: H01L23/58 ,  H01L21/66

CPC classification number: H01L23/544 ,  G03F7/70633 ,  H01L22/12 ,  H01L2223/54453 ,  H01L2223/5448 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods and apparatus for fabricating a semiconductor die including several target structures. A first layer is formed that includes one or more line or trench structures that extend in a first direction. A second layer is formed that includes one or more line or trench structures that extend in a second direction that is perpendicular to the first structure, such that a projection of the target structure along the first direction is independent of the second direction and a projection of the target structure along the second direction is independent of the first direction. A target structure and a method for generating a calibration curve are also described.

Abstract translation: 用于制造包括几个目标结构的半导体管芯的方法和装置。 形成第一层，其包括在第一方向上延伸的一个或多个线或沟槽结构。 形成第二层，其包括在垂直于第一结构的第二方向上延伸的一个或多个线或沟槽结构，使得目标结构沿着第一方向的突起独立于第二方向和投影 沿着第二方向的目标结构与第一方向无关。 还描述了用于产生校准曲线的目标结构和方法。

公开(公告)号：WO2005079498A3

公开(公告)日：2006-08-03

申请号：PCT/US2005005253

申请日：2005-02-17

Applicant: KLA TENCOR TECH CORP ,  ADEL MICHAEL E ,  SELIGSON JOEL L ,  KANDEL DANIEL

Inventor： ADEL MICHAEL E ,  SELIGSON JOEL L ,  KANDEL DANIEL

IPC: G01B11/00 ,  G03F7/00 ,  G03F7/20 ,  H01L21/66 ,  H01L21/76 ,  H01L23/544

CPC classification number: G03F7/70683 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/70633 ,  H01L22/12

Abstract: The present invention relates to overlay marks and methods for determining overlay error. One aspect of the present invention relates to a continuously varying offset mark. The continuously varying offset mark is a single mark that includes over laid periodic structures, which have offsets that vary as a function of position. By way of example, the periodic structures may correspond to gratings with different values of a grating characteristic such as pitch. Another aspect of the present invention relates to methods for determining overlay error from the continuously varying offset mark. The method generally includes determining the center of symmetry of the continuously varying offset mark and comparing it to the geometric center of the mark. If there is zero overlay, the center of symmetry tends to coincide with the geometric center of the mark. If overlay is non zero (e.g., misalignment between two layers), the center of symmetry is displaced from the geometric center of the mark. The displacement in conjunction with the preset gain of the continuously varying offset mark is used to calculate the overlay error.

Abstract translation: 本发明涉及用于确定覆盖误差的覆盖标记和方法。 本发明的一个方面涉及连续变化的偏移标记。 连续变化的偏移标记是单个标记，其包括覆盖周期性结构，其具有作为位置的函数而变化的偏移。 作为示例，周期性结构可以对应于具有诸如间距的光栅特性的不同值的光栅。 本发明的另一方面涉及用于从连续变化的偏移标记确定覆盖误差的方法。 该方法通常包括确定连续变化的偏移标记的对称中心并将其与标记的几何中心进行比较。 如果零覆盖，则对称中心倾向于与标记的几何中心一致。 如果覆盖层不为零（例如，两层之间的未对准），则对称中心从标记的几何中心位移。 结合连续变化的偏移标记的预设增益的位移用于计算重叠误差。

公开(公告)号：WO2007109103A3

公开(公告)日：2008-09-25

申请号：PCT/US2007006569

申请日：2007-03-15

Applicant: KLA TENCOR TECH CORP ,  ADEL MICHAEL E ,  ROBINSON JOHN ,  IZIKSON PAVEL ,  EICHELBERGER BRAD ,  WIDMANN AMIR ,  KATO ATSUHIKO

Inventor： ADEL MICHAEL E ,  ROBINSON JOHN ,  IZIKSON PAVEL ,  EICHELBERGER BRAD ,  WIDMANN AMIR ,  KATO ATSUHIKO

IPC: H01J37/153

CPC classification number: G03F7/70458 ,  G03F7/70525 ,  G03F7/706 ,  G03F9/7046

Abstract: A method for optimizing alignment performance in a fleet of exposure systems involves characterizing each exposure system in a fle of exposure systems to generate a set of distinctive distortion profiles (301) associated with each exposure system The set of distinct distortion profiles are stored in a database (303) A wafer having reference pattern formed thereon is provided for further pattern fabpcation (305) and an exposure system is selected from the fleet to fabricate a next layer on the wafer (307) Linear and higher ord parameters of the selected exposure system are adjusted using the distinctive distortion profiles to model the distortion of the referen pattern (309) Once the exposure system is adjusted, it is used to form a lithographic pattern on the wafer (311).

Abstract translation: 用于优化曝光系统队列中的对准性能的方法涉及表征一系列曝光系统中的每个曝光系统，以产生与每个曝光系统相关联的一组不同的失真曲线（301）。将一组不同的失真曲线存储在数据库中 （303）提供具有形成在其上的参考图案的晶片用于进一步的图案制作（305），并且从车队中选择曝光系统以制造晶片上的下一层（307）所选曝光系统的线性和更高的ord参数 使用独特的失真曲线来调整参考图案的失真（309）。一旦曝光系统被调整，就用于在晶片（311）上形成平版印刷图案。

公开(公告)号：WO2007143056A2

公开(公告)日：2007-12-13

申请号：PCT/US2007012875

申请日：2007-05-31

Applicant: KLA TENCOR TECH CORP ,  KANDEL DANIEL ,  LEVINSKI VLADIMIR ,  ADEL MICHAEL E ,  SELIGSON JOEL L

Inventor： KANDEL DANIEL ,  LEVINSKI VLADIMIR ,  ADEL MICHAEL E ,  SELIGSON JOEL L

IPC: G01B11/00

CPC classification number: G03F7/70633

Abstract: Disclosed are apparatus and methods for measuring a characteristic, such as overlay, of a semiconductor target. In general, order-selected imaging and/or illumination is performed while collecting an image from a target using a metrology system. In one implementation, tunable spatial modulation is provided only in the imaging path of the system. In other implementations, tunable spatial modulation is provided in both the illumination and imaging paths of the system. In a specific implementation, tunable spatial modulation is used to image side-by-side gratings with diffraction orders ±n. The side-by-side gratings may be in different layers or the same layer of a semiconductor wafer. The overlay between the structures is typically found by measuring the distance between centers symmetry of the gratings. In this embodiment, only orders ±n for a given choice of n (where n is an integer and not equal to zero) are selected, and the gratings are only imaged with these diffraction orders.

Abstract translation: 公开了用于测量半导体靶的特性（例如覆盖）的装置和方法。 通常，在使用度量系统从目标物收集图像的同时执行顺序选择的成像和/或照明。 在一个实现中，仅在系统的成像路径中提供可调谐空间调制。 在其他实施方式中，在系统的照明和成像路径中提供可调谐的空间调制。 在具体实现中，可调谐空间调制用于以衍射级±n对并行光栅进行成像。 并排光栅可以在不同的层或相同的半导体晶片层中。 通常通过测量光栅的中心对称性之间的距离来发现结构之间的覆盖。 在本实施例中，对于给定的n（其中n是整数且不等于零）的选择，仅选择±n，并且光栅仅以这些衍射级成像。

公开(公告)号：WO2007109103A9

公开(公告)日：2007-11-22

申请号：PCT/US2007006569

申请日：2007-03-15

Applicant: KLA TENCOR TECH CORP ,  ADEL MICHAEL E ,  ROBINSON JOHN ,  IZIKSON PAVEL ,  EICHELBERGER BRAD ,  WIDMANN AMIR ,  KATO ATSUHIKO

Inventor： ADEL MICHAEL E ,  ROBINSON JOHN ,  IZIKSON PAVEL ,  EICHELBERGER BRAD ,  WIDMANN AMIR ,  KATO ATSUHIKO

IPC: G01J1/00

CPC classification number: G03F7/70458 ,  G03F7/70525 ,  G03F7/706 ,  G03F9/7046

Abstract: A method for optimizing alignment performance in a fleet of exposure systems involves characterizing each exposure system in a fleet of exposure systems to generate a set of distinctive distortion profiles associated with each exposure system. The set of distinctive distortion profiles are stored in a database. A wafer having reference pattern formed thereon is provided for further pattern fabrication and an exposure system is selected from the fleet to fabricate a next layer on the wafer. Linear and higher order parameters of the selected exposure system are adjusted using the distinctive distortion profiles to model the distortion of the reference pattern. Once the exposure system is adjusted, it is used to form a lithographic pattern on the wafer.

Abstract translation: 一种用于优化曝光系统的队列中的对准性能的方法涉及表征曝光系统中的每个曝光系统，以产生与每个曝光系统相关联的一组不同的畸变分布。 这组独特的失真配置文件存储在数据库中。 提供其上形成有参考图案的晶片用于进一步的图案制造，并且从该团队中选择曝光系统以制造晶片上的下一层。 所选曝光系统的线性和高阶参数使用独特的失真轮廓进行调整，以模拟参考图案的失真。 一旦曝光系统被调整，它就被用来在晶圆上形成光刻图案。

公开(公告)号：WO2006094021A3

公开(公告)日：2007-01-11

申请号：PCT/US2006007195

申请日：2006-02-28

Applicant: KLA TENCOR TECH CORP ,  FROMMER AVIV ,  LEVINSKI VLADIMIR ,  SMITH MARK D ,  BYERS JEFFREY ,  MACK CHRIS A ,  ADEL MICHAEL E

Inventor： FROMMER AVIV ,  LEVINSKI VLADIMIR ,  SMITH MARK D ,  BYERS JEFFREY ,  MACK CHRIS A ,  ADEL MICHAEL E

IPC: G01B11/00

CPC classification number: G03F9/7049 ,  G03F7/70633 ,  G03F9/7088

Abstract: A system for imaging an acquisition target or an overlay or alignment semiconductor target (404) is disclosed. The system includes a beam generator for directing at least one incident beam (402) having a wavelength lamda towards a periodic target (404) having structures with a specific pitch p. A plurality of output beams (406) are scattered from the periodic target (404) in response to the at least one incident beam (402). The system further includes an imaging lens system (410) for passing only a first and second output beam (412a, 412b) from the target (404). The imaging system is adapted such that the angular separation between the captured beams, lamda, and the pitch are selected to cause the first and second output beams (412a, 412b) to form a sinusoidal image (414). The system also includes a sensor for imaging the sinusoidal image or images (414), and a controller for causing the beam generator to direct the at least one incident beam (402) towards the periodic target or targets (404), and for analyzing the sinusoidal image or images (414).

Abstract translation: 公开了一种用于对采集目标或覆盖或对准半导体目标进行成像的系统（404）。 该系统包括用于将具有波长兰达的至少一个入射光束（402）朝向具有特定间距p的结构的周期性靶（404）引导的光束发生器。 响应于至少一个入射光束（402），多个输出光束（406）从周期性靶标（404）散射。 该系统还包括用于仅使来自目标物（404）的第一和第二输出光束（412a，412b）通过的成像透镜系统（410）。 成像系统被适配成使得捕获的光束，兰达和间距之间的角度间隔被选择以使得第一和第二输出光束（412a，412b）形成正弦图像（414）。 该系统还包括用于对正弦图像或图像进行成像的传感器（414），以及控制器，用于使光束发生器将至少一个入射光束（402）引向周期性目标（404），并且用于分析 正弦图像或图像（414）。

公开(公告)号：EP1512112A4

公开(公告)日：2006-11-02

申请号：EP03736896

申请日：2003-06-05

Applicant: KLA TENCOR TECH CORP

Inventor： SELIGSON JOEL L ,  GHINOVKER MARK ,  IZIKSON PAVEL ,  SIMKIN BORIS ,  ROBINSON JOHN ,  ADEL MICHAEL E ,  TULIPMAN DAVID

IPC: G01B11/00 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  G06K9/00 ,  G01B5/28 ,  G06F17/50 ,  H01L21/76

CPC classification number: G03F7/70483 ,  G03F7/705 ,  G03F7/70516 ,  G03F7/70633

Abstract: Disclosed are methods and apparatus for analyzing the quality of overlay targets. In one embodiment, a method of extracting data from an overlay target is disclosed. Initially, image information or one or more intensity signals of the overlay target are provided. An overlay error is obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. A systematic error metric is also obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. For example, the systematic error may indicate an asymmetry metric for one or more portions of the overlay target. A noise metric is further obtained from the overlay target by applying a statistical model to the image information or the intensity signal(s) of the overlay target. Noise metric characterizes noise, such as a grainy background, associated with the overlay target. In other embodiments, an overlay and/or stepper analysis procedure is then performed based on the systematic error metric and/or the noise metric, as well as the overlay data.

公开(公告)号：EP1946372A4

公开(公告)日：2011-01-05

申请号：EP06817348

申请日：2006-10-23

Applicant: KLA TENCOR TECH CORP

Inventor： LEVINSKI VLADIMIR ,  ADEL MICHAEL E ,  FROMMER AVIV ,  KANDEL DANIEL

IPC: G06F17/50 ,  G03F7/20

CPC classification number: H01L23/544 ,  G03F7/70633 ,  H01L22/12 ,  H01L2223/54453 ,  H01L2223/5448 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP1716389A4

公开(公告)日：2011-08-03

申请号：EP05723303

申请日：2005-02-17

Applicant: KLA TENCOR TECH CORP

Inventor： ADEL MICHAEL E ,  SELIGSON JOEL L ,  KANDEL DANIEL

IPC: G01B11/00 ,  G03F7/00 ,  G03F7/20 ,  H01L21/66 ,  H01L21/76 ,  H01L23/544

CPC classification number: G03F7/70683 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/70633 ,  H01L22/12