公开(公告)号：WO2009029851A3

公开(公告)日：2009-04-30

申请号：PCT/US2008074872

申请日：2008-08-29

Applicant: KLA TENCOR TECH CORP ,  IZIKSON PAVEL

Inventor： IZIKSON PAVEL

IPC: H01L21/66

CPC classification number: G05B13/027 ,  G03F7/70625 ,  G03F7/70633 ,  H01L22/12

Abstract: Apparatus and methods are provided for predicting a plurality of unknown parameter values (e.g. overlay error or critical dimension) using a plurality of known parameter values. In one embodiment, the method involves training a neural network to predict the plurality of parameter values (114, 700, 800, 900). In other embodiments, the prediction process does not depend on an optical property of a photolithography tool. Such predictions may be used to determine wafer lot disposition (114).

Abstract translation: 提供了使用多个已知参数值来预测多个未知参数值（例如，重叠误差或临界尺寸）的设备和方法。 在一个实施例中，该方法涉及训练神经网络以预测多个参数值（114,700,800,900）。 在其他实施例中，预测过程不依赖于光刻工具的光学性质。 这样的预测可以用于确定晶圆批次配置（114）。

公开(公告)号：WO2007109103A3

公开(公告)日：2008-09-25

申请号：PCT/US2007006569

申请日：2007-03-15

Applicant: KLA TENCOR TECH CORP ,  ADEL MICHAEL E ,  ROBINSON JOHN ,  IZIKSON PAVEL ,  EICHELBERGER BRAD ,  WIDMANN AMIR ,  KATO ATSUHIKO

Inventor： ADEL MICHAEL E ,  ROBINSON JOHN ,  IZIKSON PAVEL ,  EICHELBERGER BRAD ,  WIDMANN AMIR ,  KATO ATSUHIKO

IPC: H01J37/153

CPC classification number: G03F7/70458 ,  G03F7/70525 ,  G03F7/706 ,  G03F9/7046

Abstract: A method for optimizing alignment performance in a fleet of exposure systems involves characterizing each exposure system in a fle of exposure systems to generate a set of distinctive distortion profiles (301) associated with each exposure system The set of distinct distortion profiles are stored in a database (303) A wafer having reference pattern formed thereon is provided for further pattern fabpcation (305) and an exposure system is selected from the fleet to fabricate a next layer on the wafer (307) Linear and higher ord parameters of the selected exposure system are adjusted using the distinctive distortion profiles to model the distortion of the referen pattern (309) Once the exposure system is adjusted, it is used to form a lithographic pattern on the wafer (311).

Abstract translation: 用于优化曝光系统队列中的对准性能的方法涉及表征一系列曝光系统中的每个曝光系统，以产生与每个曝光系统相关联的一组不同的失真曲线（301）。将一组不同的失真曲线存储在数据库中 （303）提供具有形成在其上的参考图案的晶片用于进一步的图案制作（305），并且从车队中选择曝光系统以制造晶片上的下一层（307）所选曝光系统的线性和更高的ord参数 使用独特的失真曲线来调整参考图案的失真（309）。一旦曝光系统被调整，就用于在晶片（311）上形成平版印刷图案。

公开(公告)号：WO2007109103A9

公开(公告)日：2007-11-22

申请号：PCT/US2007006569

申请日：2007-03-15

Applicant: KLA TENCOR TECH CORP ,  ADEL MICHAEL E ,  ROBINSON JOHN ,  IZIKSON PAVEL ,  EICHELBERGER BRAD ,  WIDMANN AMIR ,  KATO ATSUHIKO

Inventor： ADEL MICHAEL E ,  ROBINSON JOHN ,  IZIKSON PAVEL ,  EICHELBERGER BRAD ,  WIDMANN AMIR ,  KATO ATSUHIKO

IPC: G01J1/00

CPC classification number: G03F7/70458 ,  G03F7/70525 ,  G03F7/706 ,  G03F9/7046

Abstract: A method for optimizing alignment performance in a fleet of exposure systems involves characterizing each exposure system in a fleet of exposure systems to generate a set of distinctive distortion profiles associated with each exposure system. The set of distinctive distortion profiles are stored in a database. A wafer having reference pattern formed thereon is provided for further pattern fabrication and an exposure system is selected from the fleet to fabricate a next layer on the wafer. Linear and higher order parameters of the selected exposure system are adjusted using the distinctive distortion profiles to model the distortion of the reference pattern. Once the exposure system is adjusted, it is used to form a lithographic pattern on the wafer.

Abstract translation: 一种用于优化曝光系统的队列中的对准性能的方法涉及表征曝光系统中的每个曝光系统，以产生与每个曝光系统相关联的一组不同的畸变分布。 这组独特的失真配置文件存储在数据库中。 提供其上形成有参考图案的晶片用于进一步的图案制造，并且从该团队中选择曝光系统以制造晶片上的下一层。 所选曝光系统的线性和高阶参数使用独特的失真轮廓进行调整，以模拟参考图案的失真。 一旦曝光系统被调整，它就被用来在晶圆上形成光刻图案。

公开(公告)号：EP1512112A4

公开(公告)日：2006-11-02

申请号：EP03736896

申请日：2003-06-05

Applicant: KLA TENCOR TECH CORP

Inventor： SELIGSON JOEL L ,  GHINOVKER MARK ,  IZIKSON PAVEL ,  SIMKIN BORIS ,  ROBINSON JOHN ,  ADEL MICHAEL E ,  TULIPMAN DAVID

IPC: G01B11/00 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  G06K9/00 ,  G01B5/28 ,  G06F17/50 ,  H01L21/76

CPC classification number: G03F7/70483 ,  G03F7/705 ,  G03F7/70516 ,  G03F7/70633

Abstract: Disclosed are methods and apparatus for analyzing the quality of overlay targets. In one embodiment, a method of extracting data from an overlay target is disclosed. Initially, image information or one or more intensity signals of the overlay target are provided. An overlay error is obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. A systematic error metric is also obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. For example, the systematic error may indicate an asymmetry metric for one or more portions of the overlay target. A noise metric is further obtained from the overlay target by applying a statistical model to the image information or the intensity signal(s) of the overlay target. Noise metric characterizes noise, such as a grainy background, associated with the overlay target. In other embodiments, an overlay and/or stepper analysis procedure is then performed based on the systematic error metric and/or the noise metric, as well as the overlay data.