公开(公告)号：WO2007143056A2

公开(公告)日：2007-12-13

申请号：PCT/US2007012875

申请日：2007-05-31

Applicant: KLA TENCOR TECH CORP ,  KANDEL DANIEL ,  LEVINSKI VLADIMIR ,  ADEL MICHAEL E ,  SELIGSON JOEL L

Inventor： KANDEL DANIEL ,  LEVINSKI VLADIMIR ,  ADEL MICHAEL E ,  SELIGSON JOEL L

IPC: G01B11/00

CPC classification number: G03F7/70633

Abstract: Disclosed are apparatus and methods for measuring a characteristic, such as overlay, of a semiconductor target. In general, order-selected imaging and/or illumination is performed while collecting an image from a target using a metrology system. In one implementation, tunable spatial modulation is provided only in the imaging path of the system. In other implementations, tunable spatial modulation is provided in both the illumination and imaging paths of the system. In a specific implementation, tunable spatial modulation is used to image side-by-side gratings with diffraction orders ±n. The side-by-side gratings may be in different layers or the same layer of a semiconductor wafer. The overlay between the structures is typically found by measuring the distance between centers symmetry of the gratings. In this embodiment, only orders ±n for a given choice of n (where n is an integer and not equal to zero) are selected, and the gratings are only imaged with these diffraction orders.

Abstract translation: 公开了用于测量半导体靶的特性（例如覆盖）的装置和方法。 通常，在使用度量系统从目标物收集图像的同时执行顺序选择的成像和/或照明。 在一个实现中，仅在系统的成像路径中提供可调谐空间调制。 在其他实施方式中，在系统的照明和成像路径中提供可调谐的空间调制。 在具体实现中，可调谐空间调制用于以衍射级±n对并行光栅进行成像。 并排光栅可以在不同的层或相同的半导体晶片层中。 通常通过测量光栅的中心对称性之间的距离来发现结构之间的覆盖。 在本实施例中，对于给定的n（其中n是整数且不等于零）的选择，仅选择±n，并且光栅仅以这些衍射级成像。

公开(公告)号：WO2005079498A3

公开(公告)日：2006-08-03

申请号：PCT/US2005005253

申请日：2005-02-17

Applicant: KLA TENCOR TECH CORP ,  ADEL MICHAEL E ,  SELIGSON JOEL L ,  KANDEL DANIEL

Inventor： ADEL MICHAEL E ,  SELIGSON JOEL L ,  KANDEL DANIEL

IPC: G01B11/00 ,  G03F7/00 ,  G03F7/20 ,  H01L21/66 ,  H01L21/76 ,  H01L23/544

CPC classification number: G03F7/70683 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/70633 ,  H01L22/12

Abstract: The present invention relates to overlay marks and methods for determining overlay error. One aspect of the present invention relates to a continuously varying offset mark. The continuously varying offset mark is a single mark that includes over laid periodic structures, which have offsets that vary as a function of position. By way of example, the periodic structures may correspond to gratings with different values of a grating characteristic such as pitch. Another aspect of the present invention relates to methods for determining overlay error from the continuously varying offset mark. The method generally includes determining the center of symmetry of the continuously varying offset mark and comparing it to the geometric center of the mark. If there is zero overlay, the center of symmetry tends to coincide with the geometric center of the mark. If overlay is non zero (e.g., misalignment between two layers), the center of symmetry is displaced from the geometric center of the mark. The displacement in conjunction with the preset gain of the continuously varying offset mark is used to calculate the overlay error.

Abstract translation: 本发明涉及用于确定覆盖误差的覆盖标记和方法。 本发明的一个方面涉及连续变化的偏移标记。 连续变化的偏移标记是单个标记，其包括覆盖周期性结构，其具有作为位置的函数而变化的偏移。 作为示例，周期性结构可以对应于具有诸如间距的光栅特性的不同值的光栅。 本发明的另一方面涉及用于从连续变化的偏移标记确定覆盖误差的方法。 该方法通常包括确定连续变化的偏移标记的对称中心并将其与标记的几何中心进行比较。 如果零覆盖，则对称中心倾向于与标记的几何中心一致。 如果覆盖层不为零（例如，两层之间的未对准），则对称中心从标记的几何中心位移。 结合连续变化的偏移标记的预设增益的位移用于计算重叠误差。

公开(公告)号：EP1512112A4

公开(公告)日：2006-11-02

申请号：EP03736896

申请日：2003-06-05

Applicant: KLA TENCOR TECH CORP

Inventor： SELIGSON JOEL L ,  GHINOVKER MARK ,  IZIKSON PAVEL ,  SIMKIN BORIS ,  ROBINSON JOHN ,  ADEL MICHAEL E ,  TULIPMAN DAVID

IPC: G01B11/00 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  G06K9/00 ,  G01B5/28 ,  G06F17/50 ,  H01L21/76

CPC classification number: G03F7/70483 ,  G03F7/705 ,  G03F7/70516 ,  G03F7/70633

Abstract: Disclosed are methods and apparatus for analyzing the quality of overlay targets. In one embodiment, a method of extracting data from an overlay target is disclosed. Initially, image information or one or more intensity signals of the overlay target are provided. An overlay error is obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. A systematic error metric is also obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. For example, the systematic error may indicate an asymmetry metric for one or more portions of the overlay target. A noise metric is further obtained from the overlay target by applying a statistical model to the image information or the intensity signal(s) of the overlay target. Noise metric characterizes noise, such as a grainy background, associated with the overlay target. In other embodiments, an overlay and/or stepper analysis procedure is then performed based on the systematic error metric and/or the noise metric, as well as the overlay data.

公开(公告)号：EP1716389A4

公开(公告)日：2011-08-03

申请号：EP05723303

申请日：2005-02-17

Applicant: KLA TENCOR TECH CORP

Inventor： ADEL MICHAEL E ,  SELIGSON JOEL L ,  KANDEL DANIEL

IPC: G01B11/00 ,  G03F7/00 ,  G03F7/20 ,  H01L21/66 ,  H01L21/76 ,  H01L23/544

CPC classification number: G03F7/70683 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/70633 ,  H01L22/12