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    APPARATUS AND METHODS FOR DETERMINING OVERLAY OF STRUCTURES HAVING ROTATIONAL OR MIRROR SYMMETRY
    2.
    发明申请
    APPARATUS AND METHODS FOR DETERMINING OVERLAY OF STRUCTURES HAVING ROTATIONAL OR MIRROR SYMMETRY 审中-公开
    用于确定具有旋转或反射对称性的结构覆盖的装置和方法

    公开(公告)号：WO2007008473A3

    公开(公告)日：2007-03-01

    申请号：PCT/US2006025836

    申请日：2006-06-30

    Applicant: KLA TENCOR TECH CORP ,  GHINOVKER MARK

    Inventor： GHINOVKER MARK

    IPC: G06F17/17

    CPC classification number: G01B11/272 ,  G01N21/4785 ,  G01N21/9501 ,  G03F7/70633 ,  H01L21/68 ,  H01L21/682 ,  H01L23/544 ,  Y10S438/975

    Abstract: Disclosed are overlay targets having flexible and symmetric characteristics and metrology techniques for measuring the overlay error between two or more successive layers of such targets. In one embodiment, the semiconductor target comprises a plurality of first structures having a first center of symmetry or a first line of symmetry being arranged to determine the relative shift in an x direction by analyzing an image of the first structure. The target further comprises a plurality of second structures having a second center of symmetry or a second line of symmetry being arranged to determine the relative shift in an x direction by analyzing an image of the second structures, wherein the first center of symmetry or first line of symmetry has a different location than the second center of symmetry or second line of symmetry.

    Abstract translation: 公开了具有灵活和对称特征的覆盖目标和用于测量这些目标的两个或更多个连续层之间的覆盖误差的计量技术。 在一个实施例中，半导体靶包括具有第一对称中心的多个第一结构或第一对称线被布置成通过分析第一结构的图像来确定x方向上的相对偏移。 目标还包括具有第二对称中心的多个第二结构或第二对称线，其被布置成通过分析第二结构的图像来确定x方向上的相对偏移，其中第一对称中心或第一线 对称性具有与第二对称中心或第二对称线不同的位置。

    USE OF OVERLAY DIAGNOSTICS FOR ENHANCED AUTOMATIC PROCESS CONTROL
    5.
    发明公开
    USE OF OVERLAY DIAGNOSTICS FOR ENHANCED AUTOMATIC PROCESS CONTROL 审中-公开
    使用复诊断先进的自动过程控制

    公开(公告)号：EP1512112A4

    公开(公告)日：2006-11-02

    申请号：EP03736896

    申请日：2003-06-05

    Applicant: KLA TENCOR TECH CORP

    Inventor： SELIGSON JOEL L ,  GHINOVKER MARK ,  IZIKSON PAVEL ,  SIMKIN BORIS ,  ROBINSON JOHN ,  ADEL MICHAEL E ,  TULIPMAN DAVID

    IPC: G01B11/00 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  G06K9/00 ,  G01B5/28 ,  G06F17/50 ,  H01L21/76

    CPC classification number: G03F7/70483 ,  G03F7/705 ,  G03F7/70516 ,  G03F7/70633

    Abstract: Disclosed are methods and apparatus for analyzing the quality of overlay targets. In one embodiment, a method of extracting data from an overlay target is disclosed. Initially, image information or one or more intensity signals of the overlay target are provided. An overlay error is obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. A systematic error metric is also obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. For example, the systematic error may indicate an asymmetry metric for one or more portions of the overlay target. A noise metric is further obtained from the overlay target by applying a statistical model to the image information or the intensity signal(s) of the overlay target. Noise metric characterizes noise, such as a grainy background, associated with the overlay target. In other embodiments, an overlay and/or stepper analysis procedure is then performed based on the systematic error metric and/or the noise metric, as well as the overlay data.

    7.
    发明专利
    未知

    公开(公告)号：AT504862T

    公开(公告)日：2011-04-15

    申请号：AT04713795

    申请日：2004-02-23

    Applicant: KLA TENCOR TECH CORP

    Inventor： MIEHER WALTER ,  LEVY ADY ,  GOLOVANEVSKY BORIS ,  FRIEDMANN MICHAEL ,  SMITH IAN ,  ADEL MICHAEL ,  FABRIKANT ANATOLY ,  BEVIS CHRISTOPHER ,  FIELDEN JOHN ,  BAREKET NOAH ,  GROSS KENNETH P ,  ZALICKI PIOTR ,  WACK DAN ,  DECECCO PAOLA ,  GHINOVKER MARK ,  KNOLL NOAM ,  MOSHE BARUCH

    IPC: G03F7/20 ,  G01B11/00 ,  G03F9/00

    Abstract: Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. A plurality of targets is provided. Each target includes a portion of the first and second structures and each is designed to have an offset between its first and second structure portions. The targets are illuminated with electromagnetic radiation to thereby obtain spectra from each target at a −1st diffraction order and a +1st diffraction order. It is determined whether there are any overlay error between the first structures and the second structures using a scatterometry technique based on the detected spectra by (i) for each target, determining a first differential intensity between the −1st diffraction order and a +1st diffraction order, (ii) for a plurality of pairs of targets each having a first target and a second target, determining a second differential intensity between the first differential intensity of the first target and the first differential intensity of the second target, and (iii) determining any overlay error between the first structures and the second structures using a scatterometry technique based on the second differential intensities determined from each target pair.

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