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公开(公告)号：DE112016002803T5
公开(公告)日：2018-03-29
申请号：DE112016002803
申请日：2016-06-08
Applicant: KLA TENCOR CORP
Inventor： VUKKADALA PRADEEP , SINHA JAYDEEP K , KIM JH (JONG)
IPC: H01L21/66 , H01L21/027
Abstract: Es sind Systeme und Verfahren zur Detektion, Quantifizierung und Steuerung von prozessinduzierten asymmetrischen Signaturen unter Verwendung von Messungen von strukturierten Wafergeometrien offenbart. Das System kann ein Geometrie-Messwerkzeug aufweisen, das ausgestaltet ist, um einen ersten Satz von Messungen der Wafergeometrie des Wafers vor einem Herstellungsprozess und einen zweiten Satz von Messungen der Wafergeometrie des Wafers nach dem Herstellungsprozess zu erhalten. Das System kann auch einen Prozessor umfassen, der in Kommunikation mit dem Geometrie-Messwerkzeug ist. Der Prozessor kann konfiguriert sein zum: Berechnen einer Karte der Geometrieänderung, basierend auf dem ersten Satz von Messungen der Wafergeometrie und auf dem zweiten Satz von Messungen der Wafergeometrie; Analysieren der Karte der Geometrieänderung, um eine durch den Herstellungsprozess zur Wafergeometrie induzierte asymmetrische Komponente zu detektieren; und Abschätzen eines durch den Herstellungsprozess induzierten, asymmetrischen Overlay-Fehlers auf Basis der in der Wafergeometrie detektierten asymmetrischen Komponente.
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2.发明公开USING WAFER GEOMETRY TO IMPROVE SCANNER CORRECTION EFFECTIVENESS FOR OVERLAY CONTROL 有权晶片几何用于改进扫描仪的有效性进行校正库存控制的
公开(公告)号：EP3005411A4
公开(公告)日：2017-01-18
申请号：EP14804391
申请日：2014-05-28
Applicant: KLA-TENCOR CORP
Inventor： MACNAUGHTON CRAIG , VEERARAGHAVAN SATHISH , VUKKADALA PRADEEP , SINHA JAYDEEP K , AZORDEGAN AMIR
CPC classification number: G03F7/70616 , G03F7/70633 , G03F7/70783 , G03F9/7003 , H01J37/28 , H01J37/304 , H01J37/3172 , H01J37/3174 , H01J2237/221 , H01J2237/2814 , H01J2237/30472 , H01J2237/30483 , H01J2237/31701
Abstract: Systems and methods for providing improved scanner corrections are disclosed. Scanner corrections provided in accordance with the present disclosure may be referred to as wafer geometry aware scanner corrections. More specifically, wafer geometry and/or wafer shape signature information are utilized to improve scanner corrections. By removing the wafer geometry as one of the error sources that may affect the overlay accuracy, better scanner corrections can be obtained because one less contributing factor needs to be modeled.
Abstract translation: 用于提供改进的扫描仪校正的系统和方法是游离缺失盘。 在雅舞蹈设置有本公开的扫描仪的校正可通过为晶片几何扫描器意识到校正被称为。 更具体地，晶片的几何形状和/或晶片形状的签名信息被利用来改善扫描器校正。 通过除去晶片的几何形状的误差源做可能会影响重叠精度之一，更好扫描器校正可以由于少了一个起作用的因素需要建模来获得。
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3.发明申请METHOD AND DEVICE FOR USING SUBSTRATE GEOMETRY TO DETERMINE SUBSTRATE ANALYSIS SAMPLING 审中-公开使用基板几何测定基板分析采样的方法和装置
公开(公告)号：WO2013173468A3
公开(公告)日：2014-03-27
申请号：PCT/US2013041169
申请日：2013-05-15
Applicant: KLA TENCOR CORP
Inventor： MACNAUGHTON CRAIG , SINHA JAYDEEP K
IPC: G03F7/20 , G05B19/418
CPC classification number: G03F7/70616 , G03F7/70525 , G03F7/70633 , G05B19/41875 , H01L21/67288
Abstract: A method and apparatus for process control in the processing of a substrate is disclosed in the present invention. Embodiments of the present invention utilize a first analysis tool to determine changes in a substrate's geometry. The substrate geometry data is used to generate sampling plan that will be used to check areas of the substrate that are likely to have errors after processing. The sampling plan is fed forwards to a second analysis tool that samples the substrate after it has been processed.
Abstract translation: 在本发明中公开了一种用于处理衬底中的过程控制的方法和装置。 本发明的实施例利用第一分析工具来确定衬底几何形状的变化。 基板几何数据用于产生采样计划，该采样计划将用于检查处理后可能出现错误的基板区域。 采样计划向前馈送到第二个分析工具，对其进行处理后进行采样。
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4.发明申请METHODS AND SYSTEMS OF OBJECT BASED METROLOGY FOR ADVANCED WAFER SURFACE NANOTOPOGRAPHY 审中-公开用于先进晶片表面纳米摄影的基于对象的计量方法和系统
公开(公告)号：WO2012096855A3
公开(公告)日：2012-11-22
申请号：PCT/US2012020573
申请日：2012-01-08
Applicant: KLA TENCOR CORP , CHEN HAIGUANG , SINHA JAYDEEP K , KAMENSKY SERGEY
Inventor： CHEN HAIGUANG , SINHA JAYDEEP K , KAMENSKY SERGEY
CPC classification number: H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
Abstract: Disclosed herein is a system and method for enhanced and expanded localized geometry characterization. Objects of interest are classified according to user-defined parameters, and this enables enhanced contrast and more accurate feature detection, as well as more accurately defined feature object regions.
Abstract translation: 本文公开了用于增强和扩展的局部几何特征的系统和方法。 感兴趣的对象根据用户定义的参数进行分类，这可以增强对比度和更准确的特征检测，以及更精确定义的特征对象区域。
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5.发明申请SITE BASED QUANTIFICATION OF SUBSTRATE TOPOGRAPHY AND ITS RELATION TO LITHOGRAPHY DEFOCUS AND OVERLAY 审中-公开基于位置的基底地质定量及其与断层和覆盖的关系
公开(公告)号：WO2011085019A3
公开(公告)日：2015-07-09
申请号：PCT/US2011020245
申请日：2011-01-05
Applicant: KLA TENCOR CORP , VEERARAGHAVAN SATHISH , SINHA JAYDEEP K
Inventor： VEERARAGHAVAN SATHISH , SINHA JAYDEEP K
IPC: H01L21/66 , H01L21/027
CPC classification number: G06F17/5009 , G01B11/24 , G01N21/9501 , G03F7/705 , G03F7/70633 , G03F7/70641 , G03F7/7065 , G03F7/70783 , G06F17/5018 , H01L22/12
Abstract: A method and system for modeling and analyzing wafer nanotopography data utilizes a nonlinear contact finite element model. Inputs to the model include lithography chuck parameters and site-based geometry data. Outputs from the model include in-plane distortions and out-of-plane distortions, from which defocus and overlay can be derived.
Abstract translation: 用于建模和分析晶片纳米成像数据的方法和系统利用非线性接触有限元模型。 该模型的输入包括光刻卡盘参数和基于位置的几何数据。 模型的输出包括平面内失真和平面外失真，从中可以得出散焦和叠加。
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Patent Agency Ranking6.发明申请
公开(公告)号：WO2011109545A3
公开(公告)日：2011-12-29
申请号：PCT/US2011026900
申请日：2011-03-02
Applicant: KLA TENCOR CORP , CHEN HAIGUANG , SINHA JAYDEEP K
Inventor： CHEN HAIGUANG , SINHA JAYDEEP K
IPC: H01L21/66
CPC classification number: G01B11/24 , H01L22/12 , H01L2924/0002 , H01L2924/00
Abstract: Disclosed herein is a method to enhance detection and quantification of features in the wafer edge/wafer roll off regions. Modifications and improvements have been made to earlier methods which enable improved accuracy and increased scope of feature detection.
Abstract translation: 本文公开了一种增强晶片边缘/晶片滚降区域中的特征的检测和量化的方法。 对早期的方法进行了修改和改进，这些方法能够提高特征检测的准确性和扩大范围。
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公开(公告)号：WO2010025334A3
公开(公告)日：2010-05-20
申请号：PCT/US2009055313
申请日：2009-08-28
Applicant: KLA TENCOR CORP , VEERARAGHAVAN SATHISH , SINHA JAYDEEP K , FETTIG RABI
Inventor： VEERARAGHAVAN SATHISH , SINHA JAYDEEP K , FETTIG RABI
IPC: H01L21/66
CPC classification number: H01L22/12
Abstract: A system for evaluating the metrological characteristics of a surface of a substrate, the system including an optical substrate measurement system, a data analyzing system for analyzing data in an evaluation area on the substrate, applying feature-specific filters to characterize the surface of the substrate, and produce surface-specific metrics for characterizing and quantifying a feature of interest, the surface-specific metrics including a range metric for quantifying maximum and minimum deviations in the evaluation area, a deviation metric for quantifying a point deviation having a largest magnitude in a set of point deviations, where the point deviations are an amount of deviation from a reference plane fit to the evaluation area, and a root mean square metric calculated from power spectral density.
Abstract translation: 一种用于评估基板的表面的计量特性的系统，所述系统包括光学基板测量系统，用于分析基板上的评估区域中的数据的数据分析系统，应用特征滤波器以表征基板的表面 并且产生用于表征和量化感兴趣的特征的表面特定度量，所述表面特定度量包括用于量化评估区域中的最大和最小偏差的范围度量，用于量化具有最大幅度的点偏差的偏差度量 点偏差集，其中点偏差是与参考平面拟合到评估区域的偏差量，以及根据功率谱密度计算的均方根度量。
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8.发明公开METHODS AND SYSTEMS OF OBJECT BASED METROLOGY FOR ADVANCED WAFER SURFACE NANOTOPOGRAPHY 审中-公开方法和系统支持先进晶圆表面NANO TOPOGRAPHIE基于对象的测量
公开(公告)号：EP2663998A4
公开(公告)日：2016-06-15
申请号：EP12734373
申请日：2012-01-08
Applicant: KLA TENCOR CORP
Inventor： CHEN HAIGUANG , SINHA JAYDEEP K , KAMENSKY SERGEY
CPC classification number: H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
Abstract: A system and method for enhanced and expanded localized geometry characterization. Objects of interest are enhanced, detected, and classified according to user-defined parameters, and this enables enhanced contrast and more accurate feature detection, as well as more accurately defined feature object regions for feature geometry measurement and characterization.
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9.发明公开SYSTEMS, METHODS AND METRICS FOR WAFER HIGH ORDER SHAPE CHARACTERIZATION AND WAFER CLASSIFICATION USING WAFER DIMENSIONAL GEOMETRY TOOLS 审中-公开系统，方法和标准来塑造WAFERS高阶和晶圆分类表征与晶圆尺寸几何图形工具
公开(公告)号：EP2909857A4
公开(公告)日：2016-04-27
申请号：EP13846801
申请日：2013-10-18
Applicant: KLA TENCOR CORP
Inventor： CHEN HAIGUANG , SINHA JAYDEEP K , KAMENSKY SERGEY , VEERARAGHAVAN SATHISH , VUKKADALA PRADEEP
CPC classification number: G01B11/24 , G01B2210/56 , G01N21/9501 , G06F17/00 , H01L22/12
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10.发明公开SITE BASED QUANTIFICATION OF SUBSTRATE TOPOGRAPHY AND ITS RELATION TO LITHOGRAPHY DEFOCUS AND OVERLAY 审中-公开STANDORTBASIERTE QUANTIFIZIERUNG EINER SUBSTRATTOPOGRAPHIE UND IHRESVERHÄLTNISSESZU DEFOKUSSIERUNG UND在DER LITHOGRAPHIE
公开(公告)号：EP2526409A4
公开(公告)日：2017-10-04
申请号：EP11732096
申请日：2011-01-05
Applicant: KLA-TENCOR CORP
Inventor： VEERARAGHAVAN SATHISH , SINHA JAYDEEP K
CPC classification number: G06F17/5009 , G01B11/24 , G01N21/9501 , G03F7/705 , G03F7/70633 , G03F7/70641 , G03F7/7065 , G03F7/70783 , G06F17/5018 , H01L22/12
Abstract: A method and system for modeling and analyzing wafer nanotopography data utilizes a nonlinear contact finite element model. Inputs to the model include lithography chuck parameters and site-based geometry data. Outputs from the model include in-plane distortions and out-of-plane distortions, from which defocus and overlay can be derived.
Abstract translation: 用于建模和分析晶片纳米形貌数据的方法和系统利用非线性接触有限元模型。 该模型的输入包括光刻卡盘参数和基于位置的几何数据。 该模型的输出包括平面内失真和平面外失真，可以从中导出失焦和重叠。
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