公开(公告)号：WO2016010776A1

公开(公告)日：2016-01-21

申请号：PCT/US2015/039437

申请日：2015-07-07

Applicant: KLA-TENCOR CORPORATION

Inventor： KANDEL, Daniel ,  SMITH, Mark. D ,  WAGNER, Mark ,  AMIT, Eran ,  LEE, Myungjun

IPC: H01L21/66

CPC classification number: G06F17/5081 ,  G01N21/93 ,  G01N21/956 ,  G01N2201/13 ,  G06F2217/12 ,  H01L22/12 ,  H01L22/30 ,  Y02P80/30

Abstract: Metrology methods are provided, which comprise identifying overlay critical patterns in a device design, the overlay critical patterns having an overlay sensitivity to process variation above a specified threshold that depends on design specifications; and using metrology targets that correspond to the identified overlay critical patterns. Alternatively or complementarily, metrology methods comprise identifying yield critical patterns according to a corresponding process window narrowing due to specified process variation, wherein the narrowing is defined by a dependency of edge placement errors (EPEs) of the patterns on process parameters. Corresponding targets and measurements are provided.

Abstract translation: 提供了测量方法，其包括在设备设计中识别重叠关键模式，所述重叠关键模式对于依赖于设计规范的指定阈值以上的过程变化具有重叠灵敏度; 并使用与所识别的重叠关键模式相对应的度量目标。 或者或补充地，计量方法包括根据由于指定的过程变化而变窄的对应过程窗口来识别产量关键模式，其中，所述变窄由所述模式的边缘放置误差（EPE）对过程参数的依赖性来定义。 提供相应的目标和测量。

公开(公告)号：WO2017030990A1

公开(公告)日：2017-02-23

申请号：PCT/US2016/046865

申请日：2016-08-12

Applicant: KLA-TENCOR CORPORATION

Inventor： LEE, Myungjun ,  SMITH, Mark D. ,  KAPASI, Sanjay ,  PANDEV, Stillian ,  SANKO, Dimitry ,  SUBRAHMANYAN, Pradeep ,  LEVY, Ady

IPC: G03F7/20 ,  G03F7/00 ,  H01L21/027 ,  H01L21/66

CPC classification number: G03F7/70558 ,  G03F7/70091 ,  G03F7/70641

Abstract: A lithography system includes an illumination source and a set of projection optics. The illumination source directs a beam of illumination from an off-axis illumination pole to a pattern mask. The pattern mask includes a set of pattern elements to generate a set of diffracted beams including illumination from the illumination pole. At least two diffracted beams of the set of diffracted beams received by the set of projection optics are asymmetrically distributed in a pupil plane of the set of projection optics. The at least two diffracted beams of the set of diffracted beams are asymmetrically incident on the sample to form a set of fabricated elements corresponding to an image of the set of pattern elements. The set of fabricated elements on the sample includes one or more indicators of a location of the sample along an optical axis of the set of projection optics.

Abstract translation: 光刻系统包括照明源和一组投影光学器件。 照明源将来自离轴照明杆的照明光束引导到图案掩模。 图案掩模包括一组图案元件，以生成包括来自照明杆的照明的衍射光束集合。 该组投影光学器件所接收的衍射光束组中的至少两个衍射光束不对称地分布在该组投影光学器件的光瞳平面内。 衍射光束组中的至少两个衍射光束不对称地入射到样品上，以形成一组对应于该组图案元件的图像的制造元件。 样品上的一组制造元件包括样品沿着该组投影光学器件的光轴的位置的一个或多个指示器。

公开(公告)号：WO2017210128A1

公开(公告)日：2017-12-07

申请号：PCT/US2017/034779

申请日：2017-05-26

Applicant: KLA-TENCOR CORPORATION

Inventor： LEE, Myungjun ,  SMITH, Mark D.

IPC: H01L21/66 ,  H01L21/027 ,  H01L21/033

CPC classification number: G03F7/70283 ,  G03F1/22 ,  G03F1/38 ,  G03F7/70091 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70683

Abstract: A lithography system includes an illumination source including two illumination poles separated along a first direction and symmetrically distributed around an optical axis, a pattern mask to receive illumination from the illumination source, and a set of projection optics to generate an image corresponding to the pattern mask onto a sample. The pattern mask includes a metrology target pattern mask and device pattern mask elements. The device pattern mask elements are distributed along the first direction with a device separation distance. The metrology target pattern mask includes a set of metrology target pattern mask elements having a diffraction pattern corresponding to that of the device pattern mask elements. A metrology target generated on the sample associated with the metrology target pattern mask is characterizable along a second direction and has printing characteristics corresponding to those of device pattern elements generated on the sample associated with the device pattern mask elements.

Abstract translation: 光刻系统包括：照明源，其包括沿着第一方向分离且围绕光轴对称分布的两个照明极，用于从照明源接收照明的图案掩模，以及一组投影光学系统 将与图案掩模对应的图像生成到样本上。 图案掩模包括度量目标图案掩模和器件图案掩模元素。 器件图案掩模元件沿着第一方向以器件分离距离分布。 度量目标图案掩模包括具有对应于器件图案掩模元件的衍射图案的衍射图案的一组度量目标图案掩模元件。 在与度量目标图案掩模相关联的样本上生成的度量目标可以沿着第二方向表征并且具有与在与设备图案掩模元件相关联的样本上生成的设备图案元素的那些相对应的打印特征。

公开(公告)号：WO2016172122A1

公开(公告)日：2016-10-27

申请号：PCT/US2016/028314

申请日：2016-04-19

Applicant: KLA-TENCOR CORPORATION

Inventor： LEE, Myungjun ,  SMITH, Mark D. ,  ADEL, Michael E. ,  AMIT, Eran ,  KANDEL, Daniel

IPC: H01L21/66

CPC classification number: G01J9/00 ,  G03F7/705 ,  G03F7/70683 ,  H01L22/30

Abstract: Metrology methods, modules and targets are provided, for measuring tilted device designs. The methods analyze and optimize target design with respect to the relation of the Zernike sensitivity of pattern placement errors (PPEs) between target candidates and device designs. Monte Carlo methods may be applied to enhance the robustness of the selected target candidates to variation in lens aberration and/or in device designs. Moreover, considerations are provided for modifying target parameters judiciously with respect to the Zernike sensitivities to improve metrology measurement quality and reduce inaccuracies.

Abstract translation: 提供了测量方法，模块和目标，用于测量倾斜的设备设计。 该方法针对目标候选者和设备设计之间的图案布局错误（PPEs）的泽尔尼克敏感度的关系，分析和优化目标设计。 可以应用蒙特卡洛方法来增强所选择的目标候选者对透镜像差和/或装置设计中的变化的鲁棒性。 此外，还提供了考虑到明确地修改Zernike敏感度的目标参数，以提高计量测量质量并减少不准确度。

公开(公告)号：EP3440511A1

公开(公告)日：2019-02-13

申请号：EP16898139.7

申请日：2016-11-04

Applicant: KLA-Tencor Corporation

Inventor： LEVINSKI, Vladimir ,  HAJAJ, Eitan ,  ITZKOVICH, Tal ,  AHARON, Sharon ,  ADEL, Michael E. ,  PASKOVER, Yuri ,  NEGRI, Daria ,  LUBASHEVSKY, Yuval ,  MANASSEN, Amnon ,  LEE, Myungjun ,  SMITH, Mark D

IPC: G03F7/20 ,  G03F7/00 ,  H01L21/027 ,  H01L21/66