公开(公告)号：DE602004031827D1

公开(公告)日：2011-04-28

申请号：DE602004031827

申请日：2004-12-14

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIM HYUN TAK ,  YOUN DOO HYEB ,  CHAE BYUNG GYU ,  KANG KWANG YONG ,  LIM YONG SIK ,  KIM GYUNGOCK ,  MAENG SUNGLYUL ,  KIM SEONG HYUN

IPC: H01L29/00

公开(公告)号：AT502404T

公开(公告)日：2011-04-15

申请号：AT04257769

申请日：2004-12-14

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIM HYUN TAK ,  YOUN DOO HYEB ,  CHAE BYUNG GYU ,  KANG KWANG YONG ,  LIM YONG SIK ,  KIM GYUNGOCK ,  MAENG SUNGLYUL ,  KIM SEONG HYUN

IPC: H01L49/00

Abstract: Provided is a 2-terminal semiconductor device that uses an abrupt MIT semiconductor material layer. The 2-tenninal semiconductor device includes a first electrode layer, an abrupt MIT semiconductor organic or inorganic material layer having an energy gap less than 2eV and holes in a hole level disposed on the first electrode layer, and a second electrode layer disposed on the abrupt MIT semiconductor organic or inorganic material layer. An abrupt MIT is generated in the abrupt MIT semiconductor material layer by a field applied between the first electrode layer and the second electrode layer,