公开(公告)号：DE602004031827D1

公开(公告)日：2011-04-28

申请号：DE602004031827

申请日：2004-12-14

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIM HYUN TAK ,  YOUN DOO HYEB ,  CHAE BYUNG GYU ,  KANG KWANG YONG ,  LIM YONG SIK ,  KIM GYUNGOCK ,  MAENG SUNGLYUL ,  KIM SEONG HYUN

IPC: H01L29/00

公开(公告)号：AT502404T

公开(公告)日：2011-04-15

申请号：AT04257769

申请日：2004-12-14

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIM HYUN TAK ,  YOUN DOO HYEB ,  CHAE BYUNG GYU ,  KANG KWANG YONG ,  LIM YONG SIK ,  KIM GYUNGOCK ,  MAENG SUNGLYUL ,  KIM SEONG HYUN

IPC: H01L49/00

Abstract: Provided is a 2-terminal semiconductor device that uses an abrupt MIT semiconductor material layer. The 2-tenninal semiconductor device includes a first electrode layer, an abrupt MIT semiconductor organic or inorganic material layer having an energy gap less than 2eV and holes in a hole level disposed on the first electrode layer, and a second electrode layer disposed on the abrupt MIT semiconductor organic or inorganic material layer. An abrupt MIT is generated in the abrupt MIT semiconductor material layer by a field applied between the first electrode layer and the second electrode layer,

公开(公告)号：EP1678766A4

公开(公告)日：2007-04-25

申请号：EP04725203

申请日：2004-04-01

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： YOUN DOO HYEB ,  KIM HYUN TAK ,  CHAE BYUNG GYU ,  KANG KWANG YONG ,  MAENG SUNG LYUL

IPC: H01L29/78 ,  H01L49/00

CPC classification number: H01L49/003

Abstract: Provided is a metal-insulator-transition switching transistor with a gate electrode on a silicon substrate (back-gate structure) and a metal-insulator-transition channel layer of VO2 that changes from an insulator phase to a metal phase, or vice versa, depending on a variation of an electric field, and a method for manufacturing the same, whereby it is possible to fabricate a metal-insulator-transition switching transistor having high current gain characteristics and being stable thermally.