Single Crystal Manufacturing Method, Single Crystal Manufacturing Apparatus, and Single Crystal
    1.
    发明公开
    Single Crystal Manufacturing Method, Single Crystal Manufacturing Apparatus, and Single Crystal 有权
    单晶制造方法,单晶制造装置和单晶

    公开(公告)号:KR20120057303A

    公开(公告)日:2012-06-05

    申请号:KR20100118977

    申请日:2010-11-26

    Abstract: PURPOSE: A single crystal manufacturing method, a single crystal manufacturing apparatus, and a single crystal are provided to be single crystallized while an original component is maintained by preventing a content of a sample from being escaped by partially or completely covering an amorphous or polycrystalline sample by using a graphene. CONSTITUTION: A graphene layer partially or completely covering an amorphous or polycrystalline sample is formed(S100). The amorphous or polycrystalline sample is floated in the air in a treatment container(S110). Provided is a nitrogen-containing gas decomposed by using plasma for the treatment container(S120). Energy is applied to the sample(S130). The sample is crystallized by getting heat(S140).

    Abstract translation: 目的:提供单晶制造方法,单晶制造装置和单晶以单一结晶,同时通过防止样品的含量通过部分或完全覆盖无定形或多晶样品而逸出,从而保持原始组分 通过使用石墨烯。 构成:形成部分或完全覆盖无定形或多晶样品的石墨烯层(S100)。 无定形或多晶样品浮在处理容器中的空气中(S110)。 提供通过使用等离子体分解用于处理容器的含氮气体(S120)。 对样品施加能量(S130)。 样品通过加热结晶(S140)。

Patent Agency Ranking