公开(公告)号：KR20120057303A

公开(公告)日：2012-06-05

申请号：KR20100118977

申请日：2010-11-26

Applicant: KOREA RES INST OF STANDARDS

Inventor： LEE JOO IN ,  HWANG CHAN YONG ,  KIM JUNG HYUNG ,  YOO YONG SHIM ,  SHIN YONG HYEON ,  KIM KWANG MOO

IPC: C30B29/38 ,  C30B35/00 ,  H01L21/02

Abstract: PURPOSE: A single crystal manufacturing method, a single crystal manufacturing apparatus, and a single crystal are provided to be single crystallized while an original component is maintained by preventing a content of a sample from being escaped by partially or completely covering an amorphous or polycrystalline sample by using a graphene. CONSTITUTION: A graphene layer partially or completely covering an amorphous or polycrystalline sample is formed(S100). The amorphous or polycrystalline sample is floated in the air in a treatment container(S110). Provided is a nitrogen-containing gas decomposed by using plasma for the treatment container(S120). Energy is applied to the sample(S130). The sample is crystallized by getting heat(S140).

Abstract translation: 目的：提供单晶制造方法，单晶制造装置和单晶以单一结晶，同时通过防止样品的含量通过部分或完全覆盖无定形或多晶样品而逸出，从而保持原始组分 通过使用石墨烯。 构成：形成部分或完全覆盖无定形或多晶样品的石墨烯层（S100）。 无定形或多晶样品浮在处理容器中的空气中（S110）。 提供通过使用等离子体分解用于处理容器的含氮气体（S120）。 对样品施加能量（S130）。 样品通过加热结晶（S140）。

公开(公告)号：KR20120057169A

公开(公告)日：2012-06-05

申请号：KR20100118791

申请日：2010-11-26

Applicant: KOREA RES INST OF STANDARDS

Inventor： LEE JOO IN ,  KIM JUNG HYUNG ,  YOO YONG SHIM ,  SHIN YONG HYEON ,  LEE GEUN WOO

IPC: H01L33/20

CPC classification number: H01L33/20 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/06 ,  H01L33/16 ,  H01L33/32 ,  H01L33/36 ,  H01L2933/0016

Abstract: PURPOSE: A photoelectric device and a forming method thereof are provided to fundamentally eliminate deformity due to lattice mismatch by forming a thick GaN(Gallium nitride) layer on different kinds of substrates. CONSTITUTION: A first semiconductor layer(13) is formed on a substrate(12). A second semiconductor layer(15) is formed on a semiconductor layer. An active layer(14) is interposed between the first semiconductor layer and the second semiconductor layer. An active layer has a multiple quantum well structure. A first contact hole(18) exposes the first semiconductor layer. A first electrode(16) is arranged in a first contact hole.

Abstract translation: 目的：提供一种光电器件及其形成方法，从而通过在不同种类的衬底上形成厚的GaN（氮化镓）层从根本上消除由于晶格失配引起的畸形。 构成：在衬底（12）上形成第一半导体层（13）。 在半导体层上形成第二半导体层（15）。 在第一半导体层和第二半导体层之间插入有源层（14）。 有源层具有多量子阱结构。 第一接触孔（18）露出第一半导体层。 第一电极（16）布置在第一接触孔中。