公开(公告)号：US20180282154A1

公开(公告)日：2018-10-04

申请号：US15685957

申请日：2017-08-24

Applicant: Kionix, Inc.

Inventor： Martin Heller ,  Jonah deWall ,  Andrew Hocking ,  Kristin Lynch ,  Sangtae Park

IPC: B81C1/00

CPC classification number: B81C1/00269 ,  B81C2201/013 ,  B81C2201/0171 ,  B81C2201/0197 ,  B81C2201/05 ,  B81C2203/0118

Abstract: A method of fabricating a semiconductor device, includes, in part, growing a first layer of oxide on a surface of a first semiconductor substrate, forming a layer of insulating material on the oxide layer, patterning and etching the insulating material and the first oxide layer to form a multitude of oxide-insulator structures and further to expose the surface of the semiconductor substrate, growing a second layer of oxide in the exposed surface of the semiconductor substrate, and removing the second layer of oxide thereby to form a cavity in which a MEMS device is formed. The process of growing oxide in the exposed surface of the cavity and removing this oxide may be repeated until the cavity depth reaches a predefined value. Optionally, a multitude of bump stops is formed in the cavity.

公开(公告)号：US10167191B2

公开(公告)日：2019-01-01

申请号：US15685957

申请日：2017-08-24

Applicant: Kionix, Inc.

Inventor： Martin Heller ,  Jonah deWall ,  Andrew Hocking ,  Kristin Lynch ,  Sangtae Park

IPC: B81C1/00

Abstract: A method of fabricating a semiconductor device, includes, in part, growing a first layer of oxide on a surface of a first semiconductor substrate, forming a layer of insulating material on the oxide layer, patterning and etching the insulating material and the first oxide layer to form a multitude of oxide-insulator structures and further to expose the surface of the semiconductor substrate, growing a second layer of oxide in the exposed surface of the semiconductor substrate, and removing the second layer of oxide thereby to form a cavity in which a MEMS device is formed. The process of growing oxide in the exposed surface of the cavity and removing this oxide may be repeated until the cavity depth reaches a predefined value. Optionally, a multitude of bump stops is formed in the cavity.

公开(公告)号：US11527376B2

公开(公告)日：2022-12-13

申请号：US16521682

申请日：2019-07-25

Applicant: Kionix, Inc.

Inventor： Scott A. Miller ,  Nicole Kerness ,  Randy Phillips ,  Sangtae Park ,  Martin Heller ,  Mizuho Okada ,  Andrew Hocking ,  Wenting Gu

IPC: B81B3/00 ,  H01H59/00

Abstract: A micro-electromechanical system (MEMS) device includes a substrate and a beam suspended relative to a surface of the substrate. The substrate includes a buried insulator layer and a cavity. The beam includes a first portion and a second portion that are separated by an isolation joint. The cavity separates the surface of the substrate from the beam.

公开(公告)号：US20200216310A1

公开(公告)日：2020-07-09

申请号：US16243671

申请日：2019-01-09

Applicant: Kionix, Inc.

Inventor： Andrew Hocking ,  Sangtae Park ,  Scott Miller

IPC: B81C1/00 ,  B81B7/00 ,  H01L21/768

Abstract: A MEMS device includes, in part, first and second conductive semiconductor substrates, an insulating material disposed between the semiconductor substrates, a cavity formed in the second semiconductor substrate, and at least first and second drive masses each of which includes a multitude of beams etched from the first semiconductor substrate and is adapted to move in the cavity in response to an applied force. At least a first portion of the first substrate is adapted to move in response to the applied force and causes the at least first and second drive mass to be in electrical communication with the first substrate. The device may further include, in part, a coupling spring disposed between and in electrical communication with the first and second drive masses. The coupling spring is adapted to provide electrical communication between a second portion of the first substrate and the first and second drive masses.