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    SEMICONDUCTOR WAFER LIFTING DEVICE AND METHODS FOR IMPLEMENTING THE SAME
    1.
    发明申请
    SEMICONDUCTOR WAFER LIFTING DEVICE AND METHODS FOR IMPLEMENTING THE SAME 审中-公开
    半导体波形提升装置及其实施方法

    公开(公告)号：WO02080231A3

    公开(公告)日：2003-04-17

    申请号：PCT/US0209004

    申请日：2002-03-21

    Applicant: LAM RES CORP ,  ANDERSON THOMAS W ,  SEXTON GREG S

    Inventor： ANDERSON THOMAS W ,  SEXTON GREG S

    IPC: H01L21/683 ,  H01L21/00

    CPC classification number: H01L21/6831 ,  H01L21/68742 ,  Y10T279/23

    Abstract: An apparatus and a method for lifting a wafer off of an electrostatic chuck after wafer processing operations are provided. In a specific example, a wafer lifting mechanism for controlling the lifting of the wafer off of an electrostatic chuck at a completion of processing is defined. The wafer lifting mechanism includes a pin lifter yoke that is oriented below an electrostatic chuck. The pin lifter yoke has a set of pins connected thereto, and the set of pins are configured to traverse through the electrostatic chuck and contact a bottom surface of the wafer. A link is also provided and connected to the pin lifter yoke. The link is moveable so as to cause the pin lifter yoke and the set of pins to move within the electrostatic chuck and contact the bottom surface of the wafer, and once in contact with the bottom surface of the wafer, the set of pins are capable of lifting the wafer off of the electrostatic chuck. Further included is a motor for moving the link and a force feedback system for limiting an application of force by the set of pins to the bottom surface of the wafer during the lifting. The application of force, in one example, is discontinued when a strain level grows to a level that can potentially cause damage to the wafer, such as in those cases where the wafer is still strongly adhered to the chuck with electrostatic forces.

    Abstract translation: 提供了一种用于在晶片处理操作之后将晶片从静电卡盘上提起的装置和方法。 在具体示例中，定义了用于在处理完成时控制从静电卡盘提起晶片的晶片提升机构。 晶片提升机构包括定向在静电卡盘下方的销钉升降器轭。 销钉提升器轭具有连接到其上的一组销，并且该组销被构造成穿过静电卡盘并接触晶片的底表面。 还提供一个连杆并连接到销升降器轭。 连杆可移动，以便引脚升降器轭和该组销在静电卡盘内移动并接触晶片的底表面，并且一旦与晶片的底表面接触，该组销就能够 将晶片从静电卡盘提起。 还包括用于移动连杆的马达和力反馈系统，用于在提升期间限制该组销的力施加到晶片的底表面。 在一个示例中，当应变水平增长到可能对晶片造成损害的水平时，例如在晶片仍然以静电力强烈地附着到卡盘的情况下，力的施加被停止。

    IMPROVED MEGASONIC CLEANING EFFICIENCY USING AUTO- TUNING OF AN RF GENERATOR AT CONSTANT MAXIMUM EFFICIENCY
    2.
    发明申请
    IMPROVED MEGASONIC CLEANING EFFICIENCY USING AUTO- TUNING OF AN RF GENERATOR AT CONSTANT MAXIMUM EFFICIENCY 审中-公开
    使用RF发生器自动调谐的改进的MEGASONIC CLEANING效率以最大的效率

    公开(公告)号：WO2004071938A3

    公开(公告)日：2004-12-29

    申请号：PCT/US0341226

    申请日：2003-12-23

    Applicant: LAM RES CORP

    Inventor： BOYD JOHN ,  KUTHI ANDRAS ,  THIE WILLIAM ,  SMITH MICHAEL G R ,  KNOP ROBERT ,  ANDERSON THOMAS W

    IPC: B06B1/02 ,  B08B3/10 ,  B08B3/12 ,  H01L21/00 ,  H01L21/302

    CPC classification number: B08B3/12 ,  B06B1/0253 ,  B06B2201/71 ,  B08B3/10 ,  H01L21/67057 ,  H01L21/67253

    Abstract: system and method of cleaning a substrate (202) includes a megasonic chamber (206) that includes a transducer (210) and a substrate (202). The transducer (210) is being oriented toward the substrate (202). A variable distance d separates the transducer (210) and the substrate (202). The system (200) also includes a dynamically adjustable RF generator (212) that has an output coupled to the transducer. The dynamically adjustable RF generator (212) can be controlled by a phase comparison of an oscillator output (306) voltage and a phase of an RF generator output voltage. The dynamically adjustable RF generator (212) can also be controlled by monitoring a peak voltage of an output signal and controlling the RF generator to maintain the peak voltage within a predetermined voltage range. The dynamically adjustable RF generator (212) can also be controlled by dynamically controlling a variable DC power supply voltage.

    Abstract translation: 清洁衬底（202）的系统和方法包括包括换能器（210）和衬底（202）的兆声波室（206）。 换能器（210）朝向衬底（202）定向。 可变距离d分离换能器（210）和基底（202）。 系统（200）还包括动态可调的RF发生器（212），其具有耦合到换能器的输出。 动态可调RF发生器（212）可以通过振荡器输出（306）电压和RF发生器输出电压的相位的相位比较来控制。 也可以通过监视输出信号的峰值电压并控制RF发生器将峰值电压保持在预定的电压范围内来控制可动态调节的RF发生器（212）。 动态调节的RF发生器（212）也可以通过动态地控制可变直流电源电压来控制。

    Improved megasonic cleaning efficiency using auto- tuning of an rf generator at constant maximum efficiency
    4.
    发明专利
    Improved megasonic cleaning efficiency using auto- tuning of an rf generator at constant maximum efficiency 未知

    公开(公告)号：AU2003299889A8

    公开(公告)日：2004-09-06

    申请号：AU2003299889

    申请日：2003-12-23

    Applicant: LAM RES CORP

    Inventor： KNOP ROBERT ,  THIE WILLIAM ,  BOYD JOHN ,  ANDERSON THOMAS W ,  SMITH MICHAEL G R ,  KUTHI ANDRAS

    IPC: B06B1/02 ,  B08B3/10 ,  B08B3/12 ,  H01L21/00 ,  H01L21/302

    Abstract: system and method of cleaning a substrate (202) includes a megasonic chamber (206) that includes a transducer (210) and a substrate (202). The transducer (210) is being oriented toward the substrate (202). A variable distance d separates the transducer (210) and the substrate (202). The system (200) also includes a dynamically adjustable RF generator (212) that has an output coupled to the transducer. The dynamically adjustable RF generator (212) can be controlled by a phase comparison of an oscillator output (306) voltage and a phase of an RF generator output voltage. The dynamically adjustable RF generator (212) can also be controlled by monitoring a peak voltage of an output signal and controlling the RF generator to maintain the peak voltage within a predetermined voltage range. The dynamically adjustable RF generator (212) can also be controlled by dynamically controlling a variable DC power supply voltage.

    5.
    发明专利
    未知

    公开(公告)号：AT556428T

    公开(公告)日：2012-05-15

    申请号：AT05253879

    申请日：2005-06-22

    Applicant: LAM RES CORP

    Inventor： O'DONNELL ROBERT J ,  ANDERSON THOMAS W

    IPC: H01L21/00 ,  F26B3/00 ,  F26B7/00

    Abstract: In one of the many embodiments, a method for processing a substrate is provided which includes generating a first fluid meniscus and a second fluid meniscus on a surface of the substrate where the first fluid meniscus being substantially adjacent to the second fluid meniscus. The meniscus also includes substantially separating the first fluid meniscus and the second fluid meniscus with a barrier.

    PHOBIC BARRIER MENISCUS SEPARATION AND CONTAINMENT
    6.
    发明专利
    PHOBIC BARRIER MENISCUS SEPARATION AND CONTAINMENT 未知

    公开(公告)号：MY139423A

    公开(公告)日：2009-09-30

    申请号：MYPI20052944

    申请日：2005-06-28

    Applicant: LAM RES CORP

    Inventor： O'DONNELL ROBERT J ,  ANDERSON THOMAS W

    IPC: F26B21/06 ,  F26B3/00 ,  F26B7/00 ,  H01L21/00

    Abstract: 36 PHOBIC BARRIER MENISCUS SEPARATION AND CONTAINMENT ABSTRACT OF TUF, DISCLOSURE 5 IN ONE OF THE MANY EMBODIMENTS, A METHOD FOR PROCESSING A SUBSTRATE IS PROVIDED WHICH INCLUDES GENERATING A FIRST FLUID MENISCUS AND A SECOND FLUID MENISCUS ON A SURFACE OF THE SUBSTRATE WHERE THE FIRST FLUID MENISCUS BEING SUBSTANTIALLY ADJACENT TO THE SECOND FLUID MENISCUS. THE MENISCUS ALSO INCLUDES SUBSTANTIALLY SEPARATING THE FIRST FLUID MENISCUS AND THE SECOND FLUID MENISCUS WITH A BARRIER. 10

    Phobic barrier meniscus separation and containment
    7.
    发明专利
    Phobic barrier meniscus separation and containment 未知

    公开(公告)号：SG118397A1

    公开(公告)日：2006-01-27

    申请号：SG200503944

    申请日：2005-06-20

    Applicant: LAM RES CORP

    Inventor： O'DONNELL ROBERT J ,  ANDERSON THOMAS W

    IPC: F26B3/00 ,  F26B7/00 ,  H01L21/00

    Abstract: In one of the many embodiments, a method for processing a substrate is provided which includes generating a first fluid meniscus and a second fluid meniscus on a surface of the substrate where the first fluid meniscus being substantially adjacent to the second fluid meniscus. The meniscus also includes substantially separating the first fluid meniscus and the second fluid meniscus with a barrier.

    IMPROVED MEGASONIC CLEANING EFFICIENCY USING AUTO- TUNING OF AN RF GENERATOR AT CONSTANT MAXIMUM EFFICIENCY
    8.
    发明专利
    IMPROVED MEGASONIC CLEANING EFFICIENCY USING AUTO- TUNING OF AN RF GENERATOR AT CONSTANT MAXIMUM EFFICIENCY 未知

    公开(公告)号：AU2003299889A1

    公开(公告)日：2004-09-06

    申请号：AU2003299889

    申请日：2003-12-23

    Applicant: LAM RES CORP

    Inventor： ANDERSON THOMAS W ,  BOYD JOHN ,  KUTHI ANDRAS ,  THIE WILLIAM ,  SMITH MICHAEL G R ,  KNOP ROBERT

    IPC: B06B1/02 ,  B08B3/10 ,  B08B3/12 ,  H01L21/00

    Abstract: system and method of cleaning a substrate (202) includes a megasonic chamber (206) that includes a transducer (210) and a substrate (202). The transducer (210) is being oriented toward the substrate (202). A variable distance d separates the transducer (210) and the substrate (202). The system (200) also includes a dynamically adjustable RF generator (212) that has an output coupled to the transducer. The dynamically adjustable RF generator (212) can be controlled by a phase comparison of an oscillator output (306) voltage and a phase of an RF generator output voltage. The dynamically adjustable RF generator (212) can also be controlled by monitoring a peak voltage of an output signal and controlling the RF generator to maintain the peak voltage within a predetermined voltage range. The dynamically adjustable RF generator (212) can also be controlled by dynamically controlling a variable DC power supply voltage.

    Semiconductor wafer lifting device and methods for implementing the same
    9.
    发明专利
    Semiconductor wafer lifting device and methods for implementing the same 未知

    公开(公告)号：AU2002309506A1

    公开(公告)日：2002-10-15

    申请号：AU2002309506

    申请日：2002-03-21

    Applicant: LAM RES CORP

    Inventor： SEXTON GREG S ,  ANDERSON THOMAS W

    IPC: H01L21/683 ,  H01L21/00

    Abstract: An apparatus and a method for lifting a wafer off of an electrostatic chuck after wafer processing operations are provided. In a specific example, a wafer lifting mechanism for controlling the lifting of the wafer off of an electrostatic chuck at a completion of processing is defined. The wafer lifting mechanism includes a pin lifter yoke that is oriented below an electrostatic chuck. The pin lifter yoke has a set of pins connected thereto, and the set of pins are configured to traverse through the electrostatic chuck and contact a bottom surface of the wafer. A link is also provided and connected to the pin lifter yoke. The link is moveable so as to cause the pin lifter yoke and the set of pins to move within the electrostatic chuck and contact the bottom surface of the wafer, and once in contact with the bottom surface of the wafer, the set of pins are capable of lifting the wafer off of the electrostatic chuck. Further included is a motor for moving the link and a force feedback system for limiting an application of force by the set of pins to the bottom surface of the wafer during the lifting. The application of force, in one example, is discontinued when a strain level grows to a level that can potentially cause damage to the wafer, such as in those cases where the wafer is still strongly adhered to the chuck with electrostatic forces.

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