公开(公告)号：WO0231858A3

公开(公告)日：2002-09-06

申请号：PCT/US0130178

申请日：2001-09-26

Applicant: LAM RES CORP ,  MCMILLIN BRIAN K ,  KNOP ROBERT

Inventor： MCMILLIN BRIAN K ,  KNOP ROBERT

IPC: H05H1/46 ,  B01J4/00 ,  B01J19/08 ,  C23F4/00 ,  H01L21/00 ,  H01L21/3065 ,  H01J37/32

CPC classification number: H01L21/67253 ,  C23F4/00 ,  G05D11/132 ,  H01L21/67017 ,  H01L21/67069 ,  Y10S438/935

Abstract: A gas distribution system for processing a semiconductor substrate includes a plurality of gas supplies, a mixing manifold wherein gas from the plurality of gas supplies is mixed together, a plurality of gas supply lines delivering the mixed gas to different zones in the chamber, and a control valve. The gas supply lines include a first gas supply line delivering the mixed gas to a first zone in the chamber and a second gas supply line delivering the mixed gas to a second zone in the chamber. The control valve controls a rate of flow of the mixed gas in the first and/or second gas supply line such that a desired ratio of flow rates of the mixed gas is achieved in the first and second gas supply lines. In a method of using the apparatus, a semiconductor substrate is supplied to the reaction chamber and the substrate is processed by supplying the mixed gas to the first and second zones, the control valve being adjusted such that a rate of flow of the mixed gas in the first and/or second gas supply line provides a desired ratio of flow rates of the mixed gas in the first and second zones.

Abstract translation: 用于处理半导体衬底的气体分配系统包括多个气体供应源，混合歧管，其中来自多个气体供应源的气体混合在一起，多个气体供应管线将混合气体输送到腔室中的不同区域， 控制阀。 气体供应管线包括将混合气体输送到腔室中的第一区域的第一气体供应管线和将混合气体输送到腔室中的第二区域的第二气体供应管线。 控制阀控制第一和/或第二气体供应管线中的混合气体的流量，使得在第一和第二气体供应管线中实现混合气体的期望比例的流量。 在使用该设备的方法中，将半导体衬底供应至反应室，并且通过将混合气体供应至第一区域和第二区域来处理衬底，控制阀被调节成使得混合气体的流量 第一和/或第二气体供应管线在第一和第二区域中提供混合气体的期望比例的流率。

公开(公告)号：WO2004071938A3

公开(公告)日：2004-12-29

申请号：PCT/US0341226

申请日：2003-12-23

Applicant: LAM RES CORP

Inventor： BOYD JOHN ,  KUTHI ANDRAS ,  THIE WILLIAM ,  SMITH MICHAEL G R ,  KNOP ROBERT ,  ANDERSON THOMAS W

IPC: B06B1/02 ,  B08B3/10 ,  B08B3/12 ,  H01L21/00 ,  H01L21/302

CPC classification number: B08B3/12 ,  B06B1/0253 ,  B06B2201/71 ,  B08B3/10 ,  H01L21/67057 ,  H01L21/67253

Abstract: system and method of cleaning a substrate (202) includes a megasonic chamber (206) that includes a transducer (210) and a substrate (202). The transducer (210) is being oriented toward the substrate (202). A variable distance d separates the transducer (210) and the substrate (202). The system (200) also includes a dynamically adjustable RF generator (212) that has an output coupled to the transducer. The dynamically adjustable RF generator (212) can be controlled by a phase comparison of an oscillator output (306) voltage and a phase of an RF generator output voltage. The dynamically adjustable RF generator (212) can also be controlled by monitoring a peak voltage of an output signal and controlling the RF generator to maintain the peak voltage within a predetermined voltage range. The dynamically adjustable RF generator (212) can also be controlled by dynamically controlling a variable DC power supply voltage.

Abstract translation: 清洁衬底（202）的系统和方法包括包括换能器（210）和衬底（202）的兆声波室（206）。 换能器（210）朝向衬底（202）定向。 可变距离d分离换能器（210）和基底（202）。 系统（200）还包括动态可调的RF发生器（212），其具有耦合到换能器的输出。 动态可调RF发生器（212）可以通过振荡器输出（306）电压和RF发生器输出电压的相位的相位比较来控制。 也可以通过监视输出信号的峰值电压并控制RF发生器将峰值电压保持在预定的电压范围内来控制可动态调节的RF发生器（212）。 动态调节的RF发生器（212）也可以通过动态地控制可变直流电源电压来控制。

公开(公告)号：AU2003299889A8

公开(公告)日：2004-09-06

申请号：AU2003299889

申请日：2003-12-23

Applicant: LAM RES CORP

Inventor： KNOP ROBERT ,  THIE WILLIAM ,  BOYD JOHN ,  ANDERSON THOMAS W ,  SMITH MICHAEL G R ,  KUTHI ANDRAS

IPC: B06B1/02 ,  B08B3/10 ,  B08B3/12 ,  H01L21/00 ,  H01L21/302

Abstract: system and method of cleaning a substrate (202) includes a megasonic chamber (206) that includes a transducer (210) and a substrate (202). The transducer (210) is being oriented toward the substrate (202). A variable distance d separates the transducer (210) and the substrate (202). The system (200) also includes a dynamically adjustable RF generator (212) that has an output coupled to the transducer. The dynamically adjustable RF generator (212) can be controlled by a phase comparison of an oscillator output (306) voltage and a phase of an RF generator output voltage. The dynamically adjustable RF generator (212) can also be controlled by monitoring a peak voltage of an output signal and controlling the RF generator to maintain the peak voltage within a predetermined voltage range. The dynamically adjustable RF generator (212) can also be controlled by dynamically controlling a variable DC power supply voltage.

公开(公告)号：AU2003299889A1

公开(公告)日：2004-09-06

申请号：AU2003299889

申请日：2003-12-23

Applicant: LAM RES CORP

Inventor： ANDERSON THOMAS W ,  BOYD JOHN ,  KUTHI ANDRAS ,  THIE WILLIAM ,  SMITH MICHAEL G R ,  KNOP ROBERT

IPC: B06B1/02 ,  B08B3/10 ,  B08B3/12 ,  H01L21/00

Abstract: system and method of cleaning a substrate (202) includes a megasonic chamber (206) that includes a transducer (210) and a substrate (202). The transducer (210) is being oriented toward the substrate (202). A variable distance d separates the transducer (210) and the substrate (202). The system (200) also includes a dynamically adjustable RF generator (212) that has an output coupled to the transducer. The dynamically adjustable RF generator (212) can be controlled by a phase comparison of an oscillator output (306) voltage and a phase of an RF generator output voltage. The dynamically adjustable RF generator (212) can also be controlled by monitoring a peak voltage of an output signal and controlling the RF generator to maintain the peak voltage within a predetermined voltage range. The dynamically adjustable RF generator (212) can also be controlled by dynamically controlling a variable DC power supply voltage.

公开(公告)号：AU9633801A

公开(公告)日：2002-04-22

申请号：AU9633801

申请日：2001-09-26

Applicant: LAM RES CORP

Inventor： MCMILLIN BRIAN K ,  KNOP ROBERT

IPC: H05H1/46 ,  B01J4/00 ,  B01J19/08 ,  C23F4/00 ,  H01L21/00 ,  H01L21/3065 ,  H01J37/32

Abstract: A gas distribution system for processing a semiconductor substrate includes a plurality of gas supplies, a mixing manifold wherein gas from the plurality of gas supplies is mixed together, a plurality of gas supply lines delivering the mixed gas to different zones in the chamber, and a control valve. The gas supply lines include a first gas supply line delivering the mixed gas to a first zone in the chamber and a second gas supply line delivering the mixed gas to a second zone in the chamber. The control valve controls a rate of flow of the mixed gas in the first and/or second gas supply line such that a desired ratio of flow rates of the mixed gas is achieved in the first and second gas supply lines. In a method of using the apparatus, a semiconductor substrate is supplied to the reaction chamber and the substrate is processed by supplying the mixed gas to the first and second zones, the control valve being adjusted such that a rate of flow of the mixed gas in the first and/or second gas supply line provides a desired ratio of flow rates of the mixed gas in the first and second zones.