公开(公告)号：WO2004071938A3

公开(公告)日：2004-12-29

申请号：PCT/US0341226

申请日：2003-12-23

Applicant: LAM RES CORP

Inventor： BOYD JOHN ,  KUTHI ANDRAS ,  THIE WILLIAM ,  SMITH MICHAEL G R ,  KNOP ROBERT ,  ANDERSON THOMAS W

IPC: B06B1/02 ,  B08B3/10 ,  B08B3/12 ,  H01L21/00 ,  H01L21/302

CPC classification number: B08B3/12 ,  B06B1/0253 ,  B06B2201/71 ,  B08B3/10 ,  H01L21/67057 ,  H01L21/67253

Abstract: system and method of cleaning a substrate (202) includes a megasonic chamber (206) that includes a transducer (210) and a substrate (202). The transducer (210) is being oriented toward the substrate (202). A variable distance d separates the transducer (210) and the substrate (202). The system (200) also includes a dynamically adjustable RF generator (212) that has an output coupled to the transducer. The dynamically adjustable RF generator (212) can be controlled by a phase comparison of an oscillator output (306) voltage and a phase of an RF generator output voltage. The dynamically adjustable RF generator (212) can also be controlled by monitoring a peak voltage of an output signal and controlling the RF generator to maintain the peak voltage within a predetermined voltage range. The dynamically adjustable RF generator (212) can also be controlled by dynamically controlling a variable DC power supply voltage.

Abstract translation: 清洁衬底（202）的系统和方法包括包括换能器（210）和衬底（202）的兆声波室（206）。 换能器（210）朝向衬底（202）定向。 可变距离d分离换能器（210）和基底（202）。 系统（200）还包括动态可调的RF发生器（212），其具有耦合到换能器的输出。 动态可调RF发生器（212）可以通过振荡器输出（306）电压和RF发生器输出电压的相位的相位比较来控制。 也可以通过监视输出信号的峰值电压并控制RF发生器将峰值电压保持在预定的电压范围内来控制可动态调节的RF发生器（212）。 动态调节的RF发生器（212）也可以通过动态地控制可变直流电源电压来控制。

公开(公告)号：JP2006073998A

公开(公告)日：2006-03-16

申请号：JP2005189330

申请日：2005-06-29

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： SMITH MICHAEL G R ,  RAVKIN MICHAEL ,  O'DONNELL ROBERT J

IPC: H01L21/304 ,  C23C18/31 ,  C23F1/08 ,  C25D7/12 ,  C25D21/00 ,  F26B5/04 ,  F26B7/00 ,  F26B13/30 ,  G03F7/16 ,  H01L21/00 ,  H01L21/306

CPC classification number: H01L21/67051 ,  H01L21/67017 ,  H01L21/67023 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/6704 ,  H01L21/67063 ,  H01L21/67075 ,  H01L21/6708

Abstract: PROBLEM TO BE SOLVED: To provide equipment and a method which effectively perform the supply and elimination of a flow on the surface of a wafer while reducing smearing on the wafer and reducing treatment cost. SOLUTION: In one of many embodiments, a method for treating a substrate and a proximity type proximity processing head used for the method are disclosed. The method includes a process for generating a first fluid meniscus and a second fluid meniscus which at least surrounds the first fluid meniscus partially. The first fluid meniscus and the second fluid meniscus are generated on the surface of the substrate. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供有效地执行晶片表面上的流动的供应和消除的设备和方法，同时减少晶片上的污迹并降低处理成本。 解决方案：在许多实施例中的一个中，公开了一种用于处理基板的方法和用于该方法的接近型邻近处理头。 该方法包括用于产生至少围绕第一流体弯月面的第一流体弯液面和第二流体弯月面的方法。 在基板的表面上产生第一流体弯液面和第二流体弯液面。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005328039A

公开(公告)日：2005-11-24

申请号：JP2005100392

申请日：2005-03-31

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： RAVKIN MICHAEL ,  SMITH MICHAEL G R ,  DE LARIOS JOHN M ,  REDEKER FRITZ ,  KOROLIK MIKHAIL ,  DIPIETRO CHRISTIAN

IPC: B08B3/00 ,  B08B3/04 ,  C25D5/08 ,  C25D5/22 ,  C25D7/12 ,  C25D17/00 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306

CPC classification number: H01L21/67051 ,  C25D5/08 ,  C25D17/00 ,  C25D17/001 ,  H01L21/67023 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/6704 ,  H01L21/67063 ,  Y10S134/902

Abstract: PROBLEM TO BE SOLVED: To provide an apparatus and method for reducing contamination capable of achieving lower costs, and more sufficiently supplying and removing fluid to and from a wafer surface. SOLUTION: Processing fluid is supplied to the wafer surface and almost instantly removed with fluid on a wafer by a vacuum provided by an outlet 304. The processing fluid is supplied to the wafer surface such that the processing fluid is present in an area between a proximity head and the wafer surface for a moment with the given fluid on the wafer surface. In this processing, a meniscus 116 is formed and the boundary of the meniscus 116 acts as an IPA/processing fluid interface 118. Therefore, the meniscus 116 is supplied to the surface and practically acts as a fixed flow removed with the given fluid on the wafer surface. The fluid is almost instantly removed from the wafer surface area during drying, so that the formation of droplets of the fluid is prevented in the wafer surface area during drying and the probability of contamination on a wafer 108 is reduced. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种减少污染的设备和方法，能够实现更低的成本，并且更充分地向晶片表面提供流体和从晶片表面去除流体。 解决方案：通过出口304提供的真空，将处理流体供应到晶片表面并几乎立即用晶片上的流体除去。处理流体被供应到晶片表面，使得处理流体存在于区域 在接近头部和晶片表面之间与晶片表面上的给定流体一会儿。 在该处理中，形成弯液面116，并且弯液面116的边界用作IPA /处理流体界面118.因此，弯月面116被供应到表面，并且实际上用作与给定流体一起去除的固定流 晶圆表面。 在干燥期间，流体几乎立即从晶片表面区域移除，从而在干燥期间在晶片表面区域中防止流体液滴的形成，并且晶片108上的污染概率降低。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005340781A

公开(公告)日：2005-12-08

申请号：JP2005100378

申请日：2005-03-31

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： WOODS CARL ,  SMITH MICHAEL G R ,  PARKS JOHN ,  GARCIA JAMES P ,  DE LARIOS JOHN M

IPC: B05C9/02 ,  B05D1/00 ,  B05D3/12 ,  H01L21/00 ,  H01L21/02 ,  H01L21/027 ,  H01L21/304 ,  H01L21/306

CPC classification number: H01L21/67063 ,  B05C9/02 ,  H01L21/02052 ,  H01L21/67023 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/6704 ,  H01L21/67051 ,  H01L21/6708 ,  Y10S134/902

Abstract: PROBLEM TO BE SOLVED: To reduce contamination and reduce wafer cleaning cost in semiconductor wafer processing.
SOLUTION: Management of movement of a manifold carrier 104, movement of a secondary manifold 102, flow-in and drain of a fluid between a primary manifold 106 and the secondary manifold 102, and flow-in and drain of a fluid using a flow-in channel and a drain channel are managed by a fluid controller 250. The fluid controller 250 comprises any appropriate software and/or hardware that is executable of appropriate adjustment and movement required for monitoring wafer processing and processing a wafer 108 as required using the primary manifold 106, secondary manifold 102, and manifold carrier 104. The secondary manifold 102 further moves the primary manifold 106 to an opening 109.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：减少半导体晶片加工中的污染和降低晶圆清洗成本。 解决方案：管理歧管支架104的运动，辅助歧管102的运动，在主歧管106和次级歧管102之间的流体的流入和排出，以及流体的流入和排出，使用 流体通道和排出通道由流体控制器250管理。流体控制器250包括任何适当的软件和/或硬件，其可执行适当的调整和移动，用于根据需要监视晶片处理和处理晶片108所需的使用 主歧管106，次级歧管102和歧管载体104.次级歧管102进一步将主歧管106移动到开口109.版权所有：（C）2006，JPO＆NCIPI

公开(公告)号：JP2005311355A

公开(公告)日：2005-11-04

申请号：JP2005100384

申请日：2005-03-31

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： WOODS CARL ,  SMITH MICHAEL G R ,  PARKS JOHN

IPC: B05D1/00 ,  B08B3/00 ,  B08B3/02 ,  B08B3/04 ,  C23C18/16 ,  C25D5/08 ,  C25D5/22 ,  C25D7/12 ,  C25D17/00 ,  C25D21/00 ,  H01L21/00 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306

CPC classification number: B08B3/02 ,  C25D5/08 ,  C25D17/00 ,  C25D17/001 ,  C25D21/00 ,  H01L21/02057 ,  H01L21/67023 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/6704 ,  H01L21/67051 ,  H01L21/67063 ,  H01L21/6708 ,  Y10S134/902

Abstract: PROBLEM TO BE SOLVED: To provide a substrate processing apparatus that can manage fluids on wafer surfaces, while reducing contamination. SOLUTION: A wafer processing operation, that can be conducted by a proximity head 106a, is illustrated. Although a top surface 108a being processed is shown, it should be noted that wafer processing can be accomplished, in substantially the same way for a bottom surface 108b of a wafer 108. In one embodiment, inlets 302 can be utilized to supply isopropyl alcohol (IPA) vapor toward the top surface 108a of the wafer 108, and an inlet 306 can be utilized to supply a processing fluid toward the top surface 108a of the wafer 108. In addition, outlets 304 can be utilized to suck a region in close proximity to the wafer surface to remove fluid or vapor that can be located on or near the top surface 108a. As described above, any suitable combination of inlets and outlets may be utilized, as long as a meniscus 116 can be formed. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种能够在减少污染的同时管理晶片表面上的流体的基板处理装置。 解决方案：示出了可由接近头部106a进行的晶片处理操作。 尽管示出了正在处理的顶部表面108a，但是应当注意，晶片处理可以以基本相同的方式对晶片108的底部表面108b进行。在一个实施例中，入口302可用于提供异丙醇 IPA）蒸汽朝向晶片108的顶表面108a，并且入口306可用于朝向晶片108的顶表面108a供应处理流体。此外，出口304可用于吸附紧邻的区域 到晶片表面以去除可以位于顶表面108a上或附近的流体或蒸汽。 如上所述，可以使用入口和出口的任何合适的组合，只要能够形成弯液面116即可。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：MY139040A

公开(公告)日：2009-08-28

申请号：MYPI20052939

申请日：2005-06-28

Applicant: LAM RES CORP

Inventor： SMITH MICHAEL G R ,  RAVKIN MICHAEL ,  O'DONNELL ROBERT J

IPC: F26B5/04 ,  F26B7/00 ,  F26B13/30 ,  H01L21/00

Abstract: IN ONE OF THE MANY EMBODIMENTS, A METHOD FOR PROCESSING A SUBSTRATE (108) IS DISCLOSED WHICH INCLUDES GENERATING A FIRST FLUID MENISCUS (116A; 116A', 116C; 116C-1, 116C-2) AND A SECOND FLUID MENISCUS (116B, 116B'; 116B-1, 116B-2) AT LEAST PARTIALLY SURROUNDING THE FIRST FLUID MENISCUS WHEREIN THE FIRST FLUID MENISCUS AND THE SECOND FLUID MENISCUS ARE GENERATED ON A SURFACE OF THE SUBSTRATE.

公开(公告)号：MY137975A

公开(公告)日：2009-04-30

申请号：MYPI20051477

申请日：2005-04-01

Applicant: LAM RES CORP

Inventor： WOODS CARL ,  SMITH MICHAEL G R ,  PARKS JOHN ,  GARCIA JAMES P ,  LARIOS JOHN M DE

IPC: B05C9/02 ,  B05D1/00 ,  B05D3/12 ,  H01L21/00 ,  H01L21/02 ,  H01L21/027 ,  H01L21/304 ,  H01L21/306

Abstract: AN APPARATUS FOR PROCESSING A SUBSTRATE (108) IS PROVIDED WHICH INCLUDES A FIRST MANIFOLD MODULE (106) TO GENERATE A FLUID MENISCUS (140) ON A SUBSTRATE SURFACE. THE APPARATUS ALSO INCLUDES A SECOND MANIFOLD MODULE (102) TO CONNECT WITH THE FIRST MANIFOLD MODULE (106) AND ALSO TO MOVE THE FIRST MANIFOLD MODULE (106) INTO CLOSE PROXIMITY TO THE SUBSTRATE SURFACE TO GENERATE THE FLUID MENISCUS (140).

公开(公告)号：AU1490301A

公开(公告)日：2001-05-30

申请号：AU1490301

申请日：2000-11-14

Applicant: LAM RES CORP

Inventor： BAILEY ANDREW D III ,  SCHOEPP ALAN M ,  SMITH MICHAEL G R ,  KUTHI ANDRAS

IPC: H05H1/46 ,  H01J37/32 ,  H01L21/3065

Abstract: A plasma processing system that includes a temperature management system and method that can achieve very accurate temperature control over a plasma processing apparatus is disclosed. In one embodiment, the temperature management system and method operate to achieve tight temperature control over surfaces of the plasma processing apparatus which interact with the plasma during fabrication of semiconductor devices. The tight temperature control offered by the invention can be implemented with combination heating and cooling blocks such that both heating and cooling can be provided from the same thermal interface.

公开(公告)号：MY139627A

公开(公告)日：2009-10-30

申请号：MYPI20051481

申请日：2005-04-01

Applicant: LAM RES CORP

Inventor： RAVKIN MICHAEL ,  SMITH MICHAEL G R ,  LARIOS JOHN M DE ,  REDEKER FRITZ ,  KOROLIK MIKHAIL ,  DIPIETRO CHRISTIAN

IPC: B08B3/00 ,  B08B3/04 ,  C25D5/08 ,  C25D5/22 ,  C25D7/12 ,  C25D17/00 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306

Abstract: AMONG THE MANY EMBODIMENT, IN ONE EMBODIMENT, A METHOD FOR PROCESSING A SUBSTRATE (108) IS DISCLOSED WHICH INCLUDES GENERATING A FLUID LAYER ON A SURFACE OF THE SUBSTRATE (108), THE FLUID LAYER DEFINING A FLUID MENISCUS (116). THE GENERATING INCLUDES MOVING A HEAD (106) IN PROXIMITY TO THE SURFACE, APPLYING A FLUID FROM THE HEAD (106) TO THE SURFACE WHILE THE HEAD (106) IS IN PROXIMITY TO THE SURFACE OF THE SUBSTRATE (108) TO DEFINE THE FLUID LAYER, AND REMOVING THE FLUID FROM THE SURFACE THROUGH THE PROXIMITY HEAD BY A VACUUM (312). THE FLUID TRAVELS ALONG THE FLUID LAYER BETWEEN THE HEAD (106) AND THE SUBSTRATE (108) AT A VELOCITY THAT INCREASES AS THE HEAD (106) IS IN CLOSER PROXIMITY TO THE SURFACE.

公开(公告)号：AU2003299889A1

公开(公告)日：2004-09-06

申请号：AU2003299889

申请日：2003-12-23

Applicant: LAM RES CORP

Inventor： ANDERSON THOMAS W ,  BOYD JOHN ,  KUTHI ANDRAS ,  THIE WILLIAM ,  SMITH MICHAEL G R ,  KNOP ROBERT

IPC: B06B1/02 ,  B08B3/10 ,  B08B3/12 ,  H01L21/00

Abstract: system and method of cleaning a substrate (202) includes a megasonic chamber (206) that includes a transducer (210) and a substrate (202). The transducer (210) is being oriented toward the substrate (202). A variable distance d separates the transducer (210) and the substrate (202). The system (200) also includes a dynamically adjustable RF generator (212) that has an output coupled to the transducer. The dynamically adjustable RF generator (212) can be controlled by a phase comparison of an oscillator output (306) voltage and a phase of an RF generator output voltage. The dynamically adjustable RF generator (212) can also be controlled by monitoring a peak voltage of an output signal and controlling the RF generator to maintain the peak voltage within a predetermined voltage range. The dynamically adjustable RF generator (212) can also be controlled by dynamically controlling a variable DC power supply voltage.