公开(公告)号：EP1086191A4

公开(公告)日：2004-11-10

申请号：EP99907149

申请日：1999-02-18

Applicant: LAM RES CORP

Inventor： LI XU ,  ZHAO YUEXING ,  HYMES DIANE J ,  DELARIOS JOHN M

IPC: C11D1/00 ,  C09K13/00 ,  C09K13/06 ,  C09K13/08 ,  C11D3/02 ,  C11D7/02 ,  C11D7/04 ,  C11D7/08 ,  C11D7/26 ,  C11D11/00 ,  C23G1/10 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/308 ,  H01L21/3205 ,  H01L21/321 ,  C09K13/02 ,  C09K13/04

CPC classification number: H01L21/02074 ,  C09K13/00 ,  C11D7/08 ,  C11D7/265 ,  C11D11/0047 ,  C23G1/103

Abstract: A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and an ammonium compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination. The figure illustrates a flowchart of one embodiment of the process of the present invention wherein (310) is the step of polishing a copper layer on a semiconductor substrate followed by (320) the step of placing the polished semiconductor substrate in a scrubber followed by (330) the step of scrubbing the polished semiconductor substrate and ending with (340) the step of applying an acidic cleaning solution to the polished semiconductor substrate during scrubbing.

公开(公告)号：CA2309583A1

公开(公告)日：1999-09-16

申请号：CA2309583

申请日：1999-02-18

Applicant: LAM RES CORP

Inventor： HYMES DIANE J ,  LI XU ,  ZHAO YUEXING ,  DE LARIOS JOHN M

IPC: C11D1/00 ,  C09K13/00 ,  C09K13/06 ,  C09K13/08 ,  C11D3/02 ,  C11D7/02 ,  C11D7/04 ,  C11D7/08 ,  C11D7/26 ,  C11D11/00 ,  C23G1/10 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/308 ,  H01L21/3205 ,  H01L21/321

Abstract: A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and an ammonium compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination. The figure illustrates a flowchart of one embodiment of the process of the present invention wherein (310) is the step of polishing a copper layer on a semiconductor substrate followed by (320) the step of placing the polished semiconductor substrate in a scrubber followed by (330) the step of scrubbing the polished semiconductor substrate and ending with (340) the step of applying an acidic cleaning solution to the polished semiconductor substrate during scrubbing.

公开(公告)号：AT397055T

公开(公告)日：2008-06-15

申请号：AT99907149

申请日：1999-02-18

Applicant: LAM RES CORP

Inventor： LI XU ,  ZHAO YUEXING ,  HYMES DIANE ,  DELARIOS JOHN

IPC: C09K13/00 ,  C11D1/00 ,  C09K13/02 ,  C09K13/04 ,  C09K13/06 ,  C09K13/08 ,  C11D3/02 ,  C11D7/02 ,  C11D7/04 ,  C11D7/08 ,  C11D7/26 ,  C11D11/00 ,  C23G1/10 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/308 ,  H01L21/3205 ,  H01L21/321

Abstract: A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and an ammonium compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination.

公开(公告)号：IL136287A

公开(公告)日：2006-10-05

申请号：IL13628799

申请日：1999-02-18

Applicant: LAM RES CORP ,  LARIOS JOHN M DE ,  ZHAO YUEXING ,  LI XU ,  HYMES DIANE J

Inventor： LARIOS JOHN M DE ,  ZHAO YUEXING ,  LI XU ,  HYMES DIANE J

IPC: C11D1/00 ,  C09K13/00 ,  C09K13/06 ,  C09K13/08 ,  C11D3/02 ,  C11D7/02 ,  C11D7/04 ,  C11D7/08 ,  C11D7/26 ,  C11D11/00 ,  C23G1/10 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/308 ,  H01L21/3205 ,  H01L21/321

Abstract: A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and an ammonium compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination.

公开(公告)号：MY135738A

公开(公告)日：2008-06-30

申请号：MYPI20001965

申请日：2000-05-05

Applicant: LAM RES CORP

Inventor： LI XU ,  ZHAO YUEXING ,  HYMES DIANE J ,  LARIOS JOHN M DE

IPC: C09K13/00

Abstract: A CLEANING SOLUTION, METHOD, AND APPARATUS FOR CLEANING SEMICONDUCTOR SUBSTRATES AFTER CHEMICAL MECHANICAL POLISHING OF COPPER FILMS IS DESCRIBED. THE PRESENT INVENTION INCLUDES A CLEANING SOLUTION WHICH COMBINES DEIONIZED WATER, AN ORGANIC COMPOUND, AND AN AMMONIUM COMPOUND IN AN ACIDIC PH ENVIRONMENT FOR CLEANING THE SURFACE OF A SEMICONDUCTOR SUBSTRATE AFTER POLISHING A COPPER LAYER. SUCH METHODS OF CLEANING SEMICONDUCTOR SUBSTRATES AFTER COPPER CMP ALLEVIATE THE PROBLEMS ASSOCIATED WITH BRUSH LOADING AND SURFACE AND SUBSURFACE CONTAMINATION.(FIG 3)

公开(公告)号：DE69938832D1

公开(公告)日：2008-07-10

申请号：DE69938832

申请日：1999-02-18

Applicant: LAM RES CORP

Inventor： LI XU ,  ZHAO YUEXING ,  HYMES DIANE J ,  DELARIOS JOHN M

IPC: C09K13/00 ,  C11D1/00 ,  C09K13/02 ,  C09K13/04 ,  C09K13/06 ,  C09K13/08 ,  C11D3/02 ,  C11D7/02 ,  C11D7/04 ,  C11D7/08 ,  C11D7/26 ,  C11D11/00 ,  C23G1/10 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/308 ,  H01L21/3205 ,  H01L21/321

Abstract: A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and an ammonium compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination.