公开(公告)号：MY144403A

公开(公告)日：2011-09-15

申请号：MYPI20083826

申请日：2007-03-27

Applicant: LAM RES CORP

Inventor： BOYD JOHN M ,  REDEKER FRITZ C ,  YEZDI DORDI ,  MICHAEL RAVKIN ,  JOHN DE LARIOS

IPC: H01L21/306

Abstract: A PROXIMITY HEAD AND ASSOCIATED METHOD OF USE IS PROVIDED FOR PERFORMING CONFINED AREA PLANARIZATION OF A SEMICONDUCTOR WAFER (223). THE PROXIMITY HEAD INCLUDES A CHAMBER (215) DEFINED TO MAINTAIN AN ELECTROLYTE SOLUTION (211). A CATHODE (213) IS DISPOSED WITHIN THE CHAMBER IN EXPOSURE TO THE ELECTROLYTE SOLUTION. A CATION EXCHANGE MEMBRANE (221) IS DISPOSED OVER A LOWER OPENING OF THE CHAMBER. A TOP SURFACE OF THE CATION EXCHANGE MEMBRANE IS IN DIRECT EXPOSURE TO THE ELECTROLYTE SOLUTION TO BE MAINTAINED WITHIN THE CHAMBER. A FLUID SUPPLY CHANNEL (227) IS DEFINED TO EXPEL FLUID AT A LOCATION ADJACENT TO A LOWER SURFACE OF THE CATION EXCHANGE MEMBRANE. A VACUUM CHANNEL (225) IS DEFINED TO PROVIDE SUCTION AT A LOCATION ADJACENT TO THE LOWER SURFACE OF THE CATION EXCHANGE MEMBRANE, SUCH THAT THE FLUID TO BE EXPELLED FROM THE FLUID SUPPLY CHANNEL IS MADE TO FLOW OVER THE LOWER SURFACE OF THE CATION EXCHANGE MEMBRANE.

公开(公告)号：MY139376A

公开(公告)日：2009-09-30

申请号：MYPI20054607

申请日：2005-09-29

Applicant: LAM RES CORP

Inventor： GARCIA JAMES P ,  REDEKER FRED C ,  JOHN DE LARIOS

Abstract: 36 SVSTENI AND METHOD FOR MODULATING FLOW THROUGH MULTIPLE PORTS IN A PROXIMITY HEAD ABSL'RAC'L'OI.-'NIE DLSCI,OSURE A METHOD OFF'ORMINT.; A DYLLAILLIC I IQUID MENISCUS INCLUDES FORTILING A MENISCUS AT IT FIRST SIZE, THE MENISCUS BEING FONIWD BETWEEN A PIOXIMITY HEAD AND IT FIRST SURT'ACE AND CHANGING THE MENISCUS TO IT SCCOLLD SIZE BV IIICILILILL11111@ J HOW 1111OLIGH LA ICZISI OLLE ORA SET (IF POLLS OLL THE PROXIMITY HEND. A SYSTEM 1`01 111OLILIII161117 FLOW THROUGH THE 10 PORIS IN IT PROXIMITY LICAD IS OLSO DESCIIBED. A"'340 301 WI /05-

公开(公告)号：MY147290A

公开(公告)日：2012-11-30

申请号：MYPI20111318

申请日：2007-03-27

Applicant: LAM RES CORP

Inventor： BOYD JOHN M ,  REDEKER FRITZ C ,  YEZDI DORDI ,  MICHAEL RAVKIN ,  JOHN DE LARIOS

IPC: H01L21/302

Abstract: A PROXIMITY HEAD AND ASSOCIATED METHOD OF USE IS PROVIDED FOR PERFORMING CONFINED AREA PLANARIZATION OF A SEMICONDUCTOR WAFER (223). THE PROXIMITY HEAD INCLUDES A CHAMBER (215) DEFINED TO MAINTAIN AN ELECTROLYTE SOLUTION (211). A CATHODE (213) IS DISPOSED WITHIN THE CHAMBER IN EXPOSURE TO THE ELECTROLYTE SOLUTION. A CATION EXCHANGE MEMBRANE (221) IS DISPOSED OVER A LOWER OPENING OF THE CHAMBER. A TOP SURFACE OF THE CATION EXCHANGE MEMBRANE IS IN DIRECT EXPOSURE TO THE ELECTROLYTE SOLUTION TO BE MAINTAINED WITHIN THE CHAMBER. A FLUID SUPPLY CHANNEL (227) IS DEFINED TO EXPEL FLUID AT A LOCATION ADJACENT TO A LOWER SURFACE OF THE CATION EXCHANGE MEMBRANE. A VACUUM CHANNEL (225) IS DEFINED TO PROVIDE SUCTION AT A LOCATION ADJACENT TO THE LOWER SURFACE OF THE CATION EXCHANGE MEMBRANE, SUCH THAT THE FLUID TO BE EXPELLED FROM THE FLUID SUPPLY CHANNEL IS MADE TO FLOW OVER THE LOWER SURFACE OF THE CATION EXCHANGE MEMBRANE.