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1.发明申请METHODS FOR SILICON ELECTRODE ASSEMBLY ETCH RATE AND ETCH UNIFORMITY RECOVERY 审中-公开用于硅电极组装蚀刻速率和蚀刻均匀性恢复的方法
公开(公告)号：WO2006071544A3
公开(公告)日：2007-08-16
申请号：PCT/US2005045361
申请日：2005-12-15
Applicant: LAM RES CORP , HUANG TUOCHUAN , REN DAXING , SHIH HONG , ZHOU CATHERINE , YAN CHUN , MAGNI ENRICO , YEN BI MING , HUBACEK JEROME , LIM DAE J , SUNG DOUGYONG
Inventor： HUANG TUOCHUAN , REN DAXING , SHIH HONG , ZHOU CATHERINE , YAN CHUN , MAGNI ENRICO , YEN BI MING , HUBACEK JEROME , LIM DAE J , SUNG DOUGYONG
IPC: B24B1/00
CPC classification number: H01L21/67069 , B08B3/10 , B08B3/12 , B24C1/003 , H01J37/32605
Abstract: Methods for cleaning an electrode assembly, which can be used for etching a dielectric material in a plasma etching chamber after the cleaning, comprise polishing a silicon surface of the electrode assembly, preferably to remove black silicon contamination therefrom.
Abstract translation: 用于清洁电极组件的方法，其可用于在清洁之后蚀刻等离子体蚀刻室中的电介质材料，包括抛光电极组件的硅表面，优选从其中去除黑色硅污染物。
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2.发明公开METHODS FOR SILICON ELECTRODE ASSEMBLY ETCH RATE AND ETCH UNIFORMITY RECOVERY 有权方法恢复对硅电极安排的蚀刻速率和ÄTZEINHEITLICHKEIT
公开(公告)号：EP1848597A4
公开(公告)日：2010-04-14
申请号：EP05854136
申请日：2005-12-15
Applicant: LAM RES CORP
Inventor： HUANG TUOCHUAN , REN DAXING , SHIH HONG , ZHOU CATHERINE , YAN CHUN , MAGNI ENRICO , YEN BI MING , HUBACEK JEROME , LIM DAE J , SUNG DOUGYONG
CPC classification number: H01L21/67069 , B08B3/10 , B08B3/12 , B24C1/003 , H01J37/32605
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