公开(公告)号：WO2006071544A3

公开(公告)日：2007-08-16

申请号：PCT/US2005045361

申请日：2005-12-15

Applicant: LAM RES CORP ,  HUANG TUOCHUAN ,  REN DAXING ,  SHIH HONG ,  ZHOU CATHERINE ,  YAN CHUN ,  MAGNI ENRICO ,  YEN BI MING ,  HUBACEK JEROME ,  LIM DAE J ,  SUNG DOUGYONG

Inventor： HUANG TUOCHUAN ,  REN DAXING ,  SHIH HONG ,  ZHOU CATHERINE ,  YAN CHUN ,  MAGNI ENRICO ,  YEN BI MING ,  HUBACEK JEROME ,  LIM DAE J ,  SUNG DOUGYONG

IPC: B24B1/00

CPC classification number: H01L21/67069 ,  B08B3/10 ,  B08B3/12 ,  B24C1/003 ,  H01J37/32605

Abstract: Methods for cleaning an electrode assembly, which can be used for etching a dielectric material in a plasma etching chamber after the cleaning, comprise polishing a silicon surface of the electrode assembly, preferably to remove black silicon contamination therefrom.

Abstract translation: 用于清洁电极组件的方法，其可用于在清洁之后蚀刻等离子体蚀刻室中的电介质材料，包括抛光电极组件的硅表面，优选从其中去除黑色硅污染物。

公开(公告)号：EP1848597A4

公开(公告)日：2010-04-14

申请号：EP05854136

申请日：2005-12-15

Applicant: LAM RES CORP

Inventor： HUANG TUOCHUAN ,  REN DAXING ,  SHIH HONG ,  ZHOU CATHERINE ,  YAN CHUN ,  MAGNI ENRICO ,  YEN BI MING ,  HUBACEK JEROME ,  LIM DAE J ,  SUNG DOUGYONG

IPC: H01L21/00 ,  B08B3/12 ,  B24B1/00

CPC classification number: H01L21/67069 ,  B08B3/10 ,  B08B3/12 ,  B24C1/003 ,  H01J37/32605

公开(公告)号：SG11201401989UA

公开(公告)日：2014-09-26

申请号：SG11201401989U

申请日：2012-11-01

Applicant: LAM RES CORP

Inventor： DHINDSA RAHINDER ,  MARAKHTANOV ALEXEI ,  DELGADINO GERARDO ,  HUDSON ERIC ,  YEN BI MING ,  BAILEY ANDREW D III

IPC: H01L21/306

公开(公告)号：SG121183A1

公开(公告)日：2006-04-26

申请号：SG200506288

申请日：2005-09-28

Applicant: LAM RES CORP

Inventor： KIM JISOO ,  SHON JONG ,  YEN BI MING ,  LOEWENHARDT PETER

Abstract: Methods of depositing a protective coating of a silicon-containing or metallic material onto a semiconductor substrate include sputtering such material from an electrode onto a semiconductor substrate in a plasma processing chamber. The protective material can be deposited onto a multi-layer mask overlying a low-k material and/or onto the low-k material. The methods can be used in dual damascene processes to protect the mask and enhance etch selectivity, to protect the low-k material from carbon depletion during resist strip processes, and/or protect the low-k material from absorption of moisture.