公开(公告)号：SG11202112490QA

公开(公告)日：2021-12-30

申请号：SG11202112490Q

申请日：2020-05-15

Applicant: LAM RES CORP

Inventor： LIANG ANDREW ,  SHAMMA NADER ,  WISE RICH ,  SINGHAL AKHIL ,  MAHOROWALA ARPAN ,  BLACHUT GREGORY ,  AUSTIN DUSTIN

IPC: G03F7/20 ,  G03F7/11 ,  H01L21/027

Abstract: A method for patterning a substrate includes providing a substrate, and depositing a multi-layer stack including N layers on the substrate. N is an integer greater than one. The N layers include N mean free paths for secondary electrons, respectively. The method includes depositing a photoresist layer on the multi-layer stack, wherein the N mean free paths converge in the photoresist layer. Another method for patterning a substrate includes providing a substrate and depositing a layer on the substrate. The layer includes varying mean free paths for secondary electrons. The method includes depositing a photoresist layer on the layer. The varying mean free paths for secondary electrons converge in the photoresist layer.

公开(公告)号：SG10201703480QA

公开(公告)日：2017-11-29

申请号：SG10201703480Q

申请日：2017-04-28

Applicant: LAM RES CORP

Inventor： TAN SAMANTHA ,  YU JENGYI ,  WISE RICHARD ,  SHAMMA NADER ,  PAN YANG

Abstract: Methods of and apparatuses for processing substrates having carbon-containing material using atomic layer etch and selective deposition are provided. Methods involve exposing a carbon-containing material on a substrate to an oxidant and igniting a first plasma to modify a surface of the substrate and exposing the modified surface to a second plasma at a bias power to remove the modified surface. Methods also involve selectively depositing a second carbon-containing material onto the substrate using a precursor having a chemical formula of CxHy, where x and y are integers greater than or equal to 1. ALE and selective deposition may be performed without breaking vacuum.