公开(公告)号：WO2007123677A3

公开(公告)日：2008-11-20

申请号：PCT/US2007007903

申请日：2007-03-27

Applicant: LAM RES CORP ,  BOYD JOHN M ,  REDEKER FRITZ C ,  DORDI YEZDI ,  RAVKIN MICHAEL ,  DE LARIOS JOHN

Inventor： BOYD JOHN M ,  REDEKER FRITZ C ,  DORDI YEZDI ,  RAVKIN MICHAEL ,  DE LARIOS JOHN

IPC: B23H3/00 ,  H01L21/302 ,  H01L21/306 ,  H01L21/461

CPC classification number: H01L21/32115 ,  C25F7/00

Abstract: A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte solution. A cation exchange membrane is disposed over a lower opening of the chamber. A top surface of the cation exchange membrane is in direct exposure to the electrolyte solution to be maintained within the chamber. A fluid supply channel is defined to expel fluid at a location adjacent to a lower surface of the cation exchange membrane. A vacuum channel is defined to provide suction at a location adjacent to the lower surface of the cation exchange membrane, such that the fluid to be expelled from the fluid supply channel is made to flow over the lower surface of the cation exchange membrane.

Abstract translation: 提供接近头和相关联的使用方法用于执行半导体晶片的限制区域平坦化。 邻近头包括限定为维持电解质溶液的室。 在室内暴露于电解质溶液中设置阴极。 阳离子交换膜设置在室的下部开口的上方。 阳离子交换膜的顶表面直接暴露于电解质溶液中以保持在室内。 流体供应通道被定义为在邻近阳离子交换膜的下表面的位置排出流体。 定义真空通道以在邻近阳离子交换膜的下表面的位置处提供吸力，使得要从流体供应通道排出的流体流过阳离子交换膜的下表面。

公开(公告)号：EP2132767A4

公开(公告)日：2012-10-03

申请号：EP08726002

申请日：2008-02-22

Applicant: LAM RES CORP

Inventor： RAVKIN MICHAEL ,  DE LARIOS JOHN ,  REDEKER FRED C ,  KOROLIK MIKHAIL ,  FREER ERIK M

IPC: H01L21/67

CPC classification number: H01L21/67051

公开(公告)号：EP1782461A4

公开(公告)日：2008-05-28

申请号：EP05762857

申请日：2005-06-23

Applicant: LAM RES CORP

Inventor： KOROLIK MIKHAIL ,  BOYD JOHN M ,  MIKHAYLICH KATRINA ,  RAVKIN MICHAEL ,  REDEKER FRED C ,  DE LARIOS JOHN M

IPC: H01L21/461 ,  B08B7/04 ,  C23C14/00 ,  H01L27/01

CPC classification number: H01L21/31133 ,  H01L21/6708

Abstract: One embodiment provides a method of processing a substrate. The method includes applying a solution to a surface of a substrate. At least one reacting species has been produced by dissociation of the solution by applying energy such as a light to the solution. A first material on the substrate is reacted and removing the reacted first material. A system for processing a substrate is also described.

公开(公告)号：EP1599298A4

公开(公告)日：2007-05-02

申请号：EP04708156

申请日：2004-02-04

Applicant: LAM RES CORP

Inventor： BOYD JOHN M ,  RAVKIN MICHAEL ,  REDEKER FRED C ,  TREUR RANDOLPH E ,  THIE WILLIAM

IPC: H01L21/00 ,  B08B3/12

CPC classification number: H01L21/67057 ,  B08B3/12

Abstract: A method for cleaning a semiconductor substrate is provided. The method initiates with generating acoustic energy oriented in a substantially perpendicular direction to a surface of a semiconductor substrate. Then, acoustic energy oriented in a substantially parallel direction to the surface of the semiconductor substrate is generated. Each orientation of the acoustic energy may be simultaneously generated or alternately generated. A system and an apparatus for cleaning a semiconductor substrate are also provided.

公开(公告)号：EP1459363A4

公开(公告)日：2007-08-01

申请号：EP02797461

申请日：2002-12-20

Applicant: LAM RES CORP

Inventor： MIKHAYLICHENKO KATRINA ,  RAVKIN MICHAEL ,  DELARIOS JOHN

IPC: H01L21/00 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311 ,  H01L21/768 ,  H01L21/20 ,  H01L21/336

CPC classification number: H01L21/02063 ,  H01L21/67046 ,  H01L21/76814 ,  Y10S438/906

Abstract: A method for cleaning a semiconductor wafer is provided which includes plasma etching a feature into a low K dielectric layer having a photoresist mask where the plasma etching generates etch residues (Fig.4, 204). The method also includes ashing the semiconductor wafer to remove the photoresist mask where the ashing generating ashing residues (Fig.4, 206). The method further includes removing the etching residues and the ashing residues from the low K dielectric layer where the removing is enhanced by scrubbing the low K dielectric layer of the semiconductor wafer with a wet brush that applies a fluid mixture including a cleaning chemistry and a wetting agent Fig.4, 208).

公开(公告)号：WO2005003864A3

公开(公告)日：2005-04-14

申请号：PCT/US2004020332

申请日：2004-06-23

Applicant: LAM RES CORP ,  HEMKER DAVID ,  REDEKER FRED C ,  BOYD JOHN ,  DE LARIOS JOHN M ,  RAVKIN MICHAEL ,  KOROLIK MIKHAIL

Inventor： HEMKER DAVID ,  REDEKER FRED C ,  BOYD JOHN ,  DE LARIOS JOHN M ,  RAVKIN MICHAEL ,  KOROLIK MIKHAIL

IPC: G03F7/20

CPC classification number: G03F7/70341 ,  Y10S134/902

Abstract: A method for processing a substrate is provided which includes generating a meniscus on the surface of the substrate and applying photolithography light through the meniscus to enable photolithography processing of a surface of the substrate.

Abstract translation: 提供一种用于处理基板的方法，其包括在基板的表面上产生弯月面并且通过弯月面施加光刻光以使得能够对基板的表面进行光刻处理。

公开(公告)号：WO2004032160A9

公开(公告)日：2004-05-21

申请号：PCT/US0330718

申请日：2003-09-29

Applicant: LAM RES CORP

Inventor： WOODS CARL A ,  GARCIA JAMES P ,  DE LARIOS JOHN M ,  RAVKIN MICHAEL ,  REDEKER FRED C

IPC: H01L25/00 ,  B08B1/02 ,  B08B3/04 ,  H01L21/00 ,  H01G

CPC classification number: B08B3/04 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  Y10S134/902

Abstract: A system and method of moving a meniscus from a first surface to a second surface includes forming a meniscus between a head and a first surface. The meniscus can be moved from the first surface to an adjacent second surface, the adjacent second surface being parallel to the first surface. The system and method of moving the meniscus can also be used to move the meniscus along an edge of a substrate.

公开(公告)号：JP2005328039A

公开(公告)日：2005-11-24

申请号：JP2005100392

申请日：2005-03-31

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： RAVKIN MICHAEL ,  SMITH MICHAEL G R ,  DE LARIOS JOHN M ,  REDEKER FRITZ ,  KOROLIK MIKHAIL ,  DIPIETRO CHRISTIAN

IPC: B08B3/00 ,  B08B3/04 ,  C25D5/08 ,  C25D5/22 ,  C25D7/12 ,  C25D17/00 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306

CPC classification number: H01L21/67051 ,  C25D5/08 ,  C25D17/00 ,  C25D17/001 ,  H01L21/67023 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/6704 ,  H01L21/67063 ,  Y10S134/902

Abstract: PROBLEM TO BE SOLVED: To provide an apparatus and method for reducing contamination capable of achieving lower costs, and more sufficiently supplying and removing fluid to and from a wafer surface. SOLUTION: Processing fluid is supplied to the wafer surface and almost instantly removed with fluid on a wafer by a vacuum provided by an outlet 304. The processing fluid is supplied to the wafer surface such that the processing fluid is present in an area between a proximity head and the wafer surface for a moment with the given fluid on the wafer surface. In this processing, a meniscus 116 is formed and the boundary of the meniscus 116 acts as an IPA/processing fluid interface 118. Therefore, the meniscus 116 is supplied to the surface and practically acts as a fixed flow removed with the given fluid on the wafer surface. The fluid is almost instantly removed from the wafer surface area during drying, so that the formation of droplets of the fluid is prevented in the wafer surface area during drying and the probability of contamination on a wafer 108 is reduced. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种减少污染的设备和方法，能够实现更低的成本，并且更充分地向晶片表面提供流体和从晶片表面去除流体。 解决方案：通过出口304提供的真空，将处理流体供应到晶片表面并几乎立即用晶片上的流体除去。处理流体被供应到晶片表面，使得处理流体存在于区域 在接近头部和晶片表面之间与晶片表面上的给定流体一会儿。 在该处理中，形成弯液面116，并且弯液面116的边界用作IPA /处理流体界面118.因此，弯月面116被供应到表面，并且实际上用作与给定流体一起去除的固定流 晶圆表面。 在干燥期间，流体几乎立即从晶片表面区域移除，从而在干燥期间在晶片表面区域中防止流体液滴的形成，并且晶片108上的污染概率降低。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：WO2007078642A3

公开(公告)日：2007-12-27

申请号：PCT/US2006047119

申请日：2006-12-08

Applicant: LAM RES CORP ,  FREER ERIK M ,  DE LARIOS JOHN M ,  MIKHAYLICHENKO KATRINA ,  RAVKIN MICHAEL ,  KOROLIK MIKHAIL ,  REDEKER FRED C ,  THOMAS CLINT ,  PARKS JOHN

Inventor： FREER ERIK M ,  DE LARIOS JOHN M ,  MIKHAYLICHENKO KATRINA ,  RAVKIN MICHAEL ,  KOROLIK MIKHAIL ,  REDEKER FRED C ,  THOMAS CLINT ,  PARKS JOHN

IPC: B08B7/00

CPC classification number: H01L21/02057 ,  B05D3/10 ,  B08B7/02 ,  C11D1/04 ,  C11D3/042 ,  C11D3/044 ,  C11D3/18 ,  C11D3/2079 ,  C11D3/222 ,  C11D3/225 ,  C11D3/3765 ,  C11D9/00 ,  C11D9/02 ,  C11D9/267 ,  C11D11/0047 ,  C11D17/0004 ,  C11D17/0013 ,  C11D17/0017 ,  C11D17/003 ,  C11D17/041 ,  C23G1/00 ,  C23G1/18 ,  G03F7/42 ,  G03F7/423 ,  H01L21/02052 ,  H01L21/02096 ,  H01L21/31133 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708 ,  H01L21/67086

Abstract: A cleaning material is disposed over a substrate. The cleaning material includes solid components dispersed within a liquid medium. A force is applied to the solid components within the liquid medium to bring the solid components within proximity to contaminants present on the substrate. The force applied to the solid components can be exerted by an immiscible component within the liquid medium. When the solid components are brought within sufficient proximity to the contaminants, an interaction is established between the solid components and the contaminants. Then, the solid components are moved away from the substrate such that the contaminants having interacted with the solid components are removed from the substrate.

Abstract translation: 清洁材料设置在基板上。 清洁材料包括分散在液体介质内的固体组分。 对液体介质内的固体组分施加力以使固体组分接近衬底上存在的污染物。 施加到固体组分上的力可以由液体介质内的不混溶组分施加。 当固体组分充分接近污染物时，在固体组分和污染物之间建立相互作用。 然后，将固体组分移离基底，使得从基底去除与固体组分相互作用的污染物。

公开(公告)号：WO2007079036A2

公开(公告)日：2007-07-12

申请号：PCT/US2006049109

申请日：2006-12-21

Applicant: LAM RES CORP ,  FREER ERIK M ,  DE LARIOS JOHN M ,  MIKHAYLICHENKO KATRINA ,  RAVKIN MICHAEL ,  KOROLIK MIKHAIL ,  REDEKER FRED C

Inventor： FREER ERIK M ,  DE LARIOS JOHN M ,  MIKHAYLICHENKO KATRINA ,  RAVKIN MICHAEL ,  KOROLIK MIKHAIL ,  REDEKER FRED C

IPC: B08B3/00

CPC classification number: B08B7/00 ,  B08B3/00 ,  B08B7/02 ,  C11D9/02 ,  C11D11/0047 ,  C11D17/0017 ,  C23G1/18 ,  G03F7/423 ,  H01L21/02052 ,  H01L21/31133 ,  H01L21/67028 ,  H01L21/6708 ,  H01L21/67086

Abstract: A method for cleaning a substrate is provided. The method initiates with disposing a fluid layer having solid components therein to a surface of the substrate. A shear force directed substantially parallel to the surface of the substrate and toward an outer edge of the substrate is then created. The shear force may result from a normal or tangential component of a force applied to a solid body in contact with the fluid layer in one embodiment. The surface of the substrate is rinsed to remove the fluid layer. A cleaning system and apparatus are also provided.

Abstract translation: 提供一种清洗基板的方法。 该方法通过将其中具有固体组分的流体层设置在基底的表面来启动。 然后产生基本上平行于衬底的表面并朝向衬底的外边缘的剪切力。 在一个实施例中，剪切力可以由施加到与流体层接触的固体的力的正常或切向分量产生。 漂洗基材的表面以除去流体层。 还提供清洁系统和装置。