Method and material for cleaning substrate
    7.
    发明专利
    Method and material for cleaning substrate 有权
    清洗基材的方法和材料

    公开(公告)号:JP2007208246A

    公开(公告)日:2007-08-16

    申请号:JP2006353539

    申请日:2006-12-28

    Abstract: PROBLEM TO BE SOLVED: To provide a cleaning agent for cleaning the surface of a wafer which is more efficient and has weak polishing effect, and to provide a method thereof.
    SOLUTION: A method of executing cleaning with a three-phase body 110 is disclosed. A substrate 112 on which particles 102 are deposited on its surface is prepared. The three-phase body provided with a solid portion 108, a liquid portion 106 and a gas portion 104 is generated. A force F is applied to the three-phase body and an interaction between the solid portion and the particles is promoted. The three-phase body is removed from the surface of the substrate together with the particles. The particles are removed together with the three-phase body by the interaction between the solid portion and the particles.
    COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题:提供一种用于清洁晶片表面的清洁剂,其更有效并且具有较弱的抛光效果,并提供其方法。 公开了一种用三相体110进行清洗的方法。 制备其表面上沉积有颗粒102的基板112。 产生具有固体部分108,液体部分106和气体部分104的三相体。 力F施加到三相体上,促进了固体部分和颗粒之间的相互作用。 三相体与颗粒一起从衬底的表面去除。 颗粒通过固体部分和颗粒之间的相互作用与三相体一起被去除。 版权所有(C)2007,JPO&INPIT

    Method and apparatus for processing wafer surface using thin high-velocity fluid layer
    8.
    发明专利
    Method and apparatus for processing wafer surface using thin high-velocity fluid layer 有权
    使用薄型高速流体液层加工表面的方法和装置

    公开(公告)号:JP2005328039A

    公开(公告)日:2005-11-24

    申请号:JP2005100392

    申请日:2005-03-31

    Abstract: PROBLEM TO BE SOLVED: To provide an apparatus and method for reducing contamination capable of achieving lower costs, and more sufficiently supplying and removing fluid to and from a wafer surface. SOLUTION: Processing fluid is supplied to the wafer surface and almost instantly removed with fluid on a wafer by a vacuum provided by an outlet 304. The processing fluid is supplied to the wafer surface such that the processing fluid is present in an area between a proximity head and the wafer surface for a moment with the given fluid on the wafer surface. In this processing, a meniscus 116 is formed and the boundary of the meniscus 116 acts as an IPA/processing fluid interface 118. Therefore, the meniscus 116 is supplied to the surface and practically acts as a fixed flow removed with the given fluid on the wafer surface. The fluid is almost instantly removed from the wafer surface area during drying, so that the formation of droplets of the fluid is prevented in the wafer surface area during drying and the probability of contamination on a wafer 108 is reduced. COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 要解决的问题:提供一种减少污染的设备和方法,能够实现更低的成本,并且更充分地向晶片表面提供流体和从晶片表面去除流体。 解决方案:通过出口304提供的真空,将处理流体供应到晶片表面并几乎立即用晶片上的流体除去。处理流体被供应到晶片表面,使得处理流体存在于区域 在接近头部和晶片表面之间与晶片表面上的给定流体一会儿。 在该处理中,形成弯液面116,并且弯液面116的边界用作IPA /处理流体界面118.因此,弯月面116被供应到表面,并且实际上用作与给定流体一起去除的固定流 晶圆表面。 在干燥期间,流体几乎立即从晶片表面区域移除,从而在干燥期间在晶片表面区域中防止流体液滴的形成,并且晶片108上的污染概率降低。 版权所有(C)2006,JPO&NCIPI

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