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    TUNABLE MULTI-ZONE GAS INJECTION SYSTEM
    1.
    发明申请
    TUNABLE MULTI-ZONE GAS INJECTION SYSTEM 审中-公开
    可控多区域气体注入系统

    公开(公告)号：WO03034463A3

    公开(公告)日：2003-06-19

    申请号：PCT/US0232057

    申请日：2002-10-09

    Applicant: LAM RES CORP ,  COOPERBERG DAVID J ,  VAHEDI VAHID ,  RATTO DOUGLAS ,  SINGH HARMEET ,  BENJAMIN NEIL

    Inventor： COOPERBERG DAVID J ,  VAHEDI VAHID ,  RATTO DOUGLAS ,  SINGH HARMEET ,  BENJAMIN NEIL

    IPC: H05H1/46 ,  C23C16/44 ,  C23C16/455 ,  C23C16/507 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  C23C16/50

    CPC classification number: C23C16/45574 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J2237/3323 ,  H01J2237/3344

    Abstract: A tunable multi-zone injection system for a plasma processing system for plasma processing of substrates (13) such as semiconductor wafers. The system includes a plasma processing chamber (10), a substrate support (16) for supporting a substrate within the processing chamber, a dielectric member (20) having an interior surface facing the substrate support, the dielectric member forming a wall of the processing chamber, a gas injector (22) fixed to part of or removably mounted in an opening in the dielectric window, the gas injector including a plurality of gas outlets supplying process gas at adjustable flow rates to multiple zones of the chamber, and an RF energy source (19) such as a planar or non-planar spiral coil (18) which inductively couples RF energy through the dielectric member and into the chamber to energize the process gas into a plasma state. The injector can include an on-axis outlet supplying process gas at a first flow rate to a central zone and off-axis outlets supplying the same process gas at a second flow rate to an annular zone surrounding the central zone. The arrangement permits modification of gas delivery to meet the needs of a particular processing regime by allowing independent adjustment of the gas flow to multiple zones in the chamber. In addition, compared to consumable showerhead arrangements, a removably mounted gas injector can be replaced more easily and economically.

    Abstract translation: 一种用于等离子体处理系统的可调多区域注入系统，用于诸如半导体晶片的衬底（13）的等离子体处理。 该系统包括等离子体处理室（10），用于在处理室内支撑衬底的衬底支撑件（16），具有面向衬底支撑件的内表面的电介质构件（20），该电介质构件形成处理壁 腔室，固定到电介质窗口中的开口的一部分或可移除地安装在介电窗口中的开口中的气体注入器（22），气体注射器包括多个气体出口，其以可调节的流量向腔室的多个区域提供处理气体，并且RF能量 源极（19），例如平面或非平面螺旋线圈（18），其将RF能量通过电介质构件感应耦合并进入腔室，以将处理气体激励成等离子体状态。 喷射器可以包括轴向出口，其以第一流量向中心区域供应处理气体，并且离轴出口以相同的处理气体以第二流量供应到围绕中心区域的环形区域。 该装置允许气体输送的修改以通过允许独立调节气体流到腔室中的多个区域来满足特定处理状态的需要。 此外，与消耗式喷头装置相比，可以更容易且经济地更换可移除安装的气体喷射器。

    2.
    发明专利
    未知

    公开(公告)号：DE60219343D1

    公开(公告)日：2007-05-16

    申请号：DE60219343

    申请日：2002-10-09

    Applicant: LAM RES CORP

    Inventor： COOPERBERG DAVID J ,  VAHEDI VAHID ,  RATTO DOUGLAS ,  SINGH HARMEET ,  BENJAMIN NEIL

    IPC: H01J37/32 ,  H05H1/46 ,  C23C16/44 ,  C23C16/455 ,  C23C16/507 ,  C23F4/00 ,  H01L21/205 ,  H01L21/3065

    Abstract: A tunable multi-zone injection system for a plasma processing system for plasma processing of substrates such as semiconductor wafers. The injector can include an on-axis outlet supplying process gas at a first flow rate to a central zone and off-axis outlets supplying the same process gas at a second flow rate to an annular zone surrounding the central zone. The arrangement permits modification of gas delivery to meet the needs of a particular processing regime by allowing independent adjustment of the gas flow to multiple zones in the chamber. In addition, compared to consumable showerhead arrangements, a removably mounted gas injector can be replaced more easily and economically.

    3.
    发明专利
    未知

    公开(公告)号：AT358887T

    公开(公告)日：2007-04-15

    申请号：AT02801663

    申请日：2002-10-09

    Applicant: LAM RES CORP

    Inventor： COOPERBERG DAVID J ,  VAHEDI VAHID ,  RATTO DOUGLAS ,  SINGH HARMEET ,  BENJAMIN NEIL

    IPC: H05H1/46 ,  C23C16/44 ,  C23C16/455 ,  C23C16/507 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065

    Abstract: A tunable multi-zone injection system for a plasma processing system for plasma processing of substrates such as semiconductor wafers. The injector can include an on-axis outlet supplying process gas at a first flow rate to a central zone and off-axis outlets supplying the same process gas at a second flow rate to an annular zone surrounding the central zone. The arrangement permits modification of gas delivery to meet the needs of a particular processing regime by allowing independent adjustment of the gas flow to multiple zones in the chamber. In addition, compared to consumable showerhead arrangements, a removably mounted gas injector can be replaced more easily and economically.

    4.
    发明专利
    未知

    公开(公告)号：DE60219343T2

    公开(公告)日：2007-12-13

    申请号：DE60219343

    申请日：2002-10-09

    Applicant: LAM RES CORP

    Inventor： COOPERBERG DAVID J ,  VAHEDI VAHID ,  RATTO DOUGLAS ,  SINGH HARMEET ,  BENJAMIN NEIL

    IPC: H01J37/32 ,  H05H1/46 ,  C23C16/44 ,  C23C16/455 ,  C23C16/507 ,  C23F4/00 ,  H01L21/205 ,  H01L21/3065

    Abstract: A tunable multi-zone injection system for a plasma processing system for plasma processing of substrates such as semiconductor wafers. The injector can include an on-axis outlet supplying process gas at a first flow rate to a central zone and off-axis outlets supplying the same process gas at a second flow rate to an annular zone surrounding the central zone. The arrangement permits modification of gas delivery to meet the needs of a particular processing regime by allowing independent adjustment of the gas flow to multiple zones in the chamber. In addition, compared to consumable showerhead arrangements, a removably mounted gas injector can be replaced more easily and economically.

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