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    LOWER ELECTRODE ASSEMBLY OF PLASMA PROCESSING CHAMBER
    1.
    发明申请
    LOWER ELECTRODE ASSEMBLY OF PLASMA PROCESSING CHAMBER 审中-公开
    等离子体处理室的下电极组件

    公开(公告)号：WO2010062345A3

    公开(公告)日：2010-08-12

    申请号：PCT/US2009005857

    申请日：2009-10-29

    Applicant: LAM RES CORP ,  AUGUSTINO JASON ,  CHAU QUAN ,  GAFF KEITH WILLIAM ,  HA HANH TUONG ,  RICHARDSON BRETT C ,  SINGH HARMEET

    Inventor： AUGUSTINO JASON ,  CHAU QUAN ,  GAFF KEITH WILLIAM ,  HA HANH TUONG ,  RICHARDSON BRETT C ,  SINGH HARMEET

    IPC: H05H1/34 ,  H01L21/3065

    CPC classification number: H01J37/20 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/3255 ,  H01J37/32642 ,  H01J37/32715

    Abstract: A lower electrode assembly for use in a plasma processing chamber comprises a metal base and upper and lower edge rings. The metal base comprises metal plates brazed together and forming a brazed line on a lower side surface of the base, an edge ring support surface extending horizontally inwardly from the lower side surface and an upper side surface above the edge ring support surface. The upper edge ring comprises a lower surface mounted on the edge ring support surface and the lower edge ring surrounds the lower side surface of the base with a gap between opposed surfaces of the upper and lower edge rings and between the lower edge ring and the outer periphery of the base. The gap has an aspect ratio of total gap length to average gap width sufficient to impede arcing at the location of the braze line.

    Abstract translation: 用于等离子体处理室的下电极组件包括金属基座和上下边缘环。 金属基底包括钎焊在一起的金属板，在基座的下侧表面上形成钎焊线，从下侧表面向水平方向内延伸的边缘环支撑表面和在边缘环支撑表面上方的上侧表面。 上边缘环包括安装在边缘环支撑表面上的下表面，并且下边缘环围绕底部的下侧表面，在上边缘环和下边缘环的相对表面之间以及下边缘环和外侧边缘环的相对表面之间具有间隙 基地周边。 间隙具有总间隙长度与平均间隙宽度的宽高比，足以阻止钎焊线位置处的电弧。

    THERMAL PLATE WITH PLANAR THERMAL ZONES FOR SEMICONDUCTOR PROCESSING
    2.
    发明申请
    THERMAL PLATE WITH PLANAR THERMAL ZONES FOR SEMICONDUCTOR PROCESSING 审中-公开
    具有用于半导体加工的平面热区的热板

    公开(公告)号：WO2013042027A3

    公开(公告)日：2015-06-25

    申请号：PCT/IB2012054903

    申请日：2012-09-17

    Applicant: LAM RES CORP ,  LAM RES AG ,  GAFF KEITH WILLIAM ,  COMENDANT KEITH ,  RICCI ANTHONY

    Inventor： GAFF KEITH WILLIAM ,  COMENDANT KEITH ,  RICCI ANTHONY

    IPC: H01L21/30 ,  H01C17/02 ,  H05B3/68

    CPC classification number: F25B21/04 ,  H01L21/0201 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H01L35/34 ,  Y10T29/49083 ,  Y10T29/49165

    Abstract: A thermal plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar thermal zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar thermal zone uses at least one Peltier device as a thermoelectric element. A substrate support assembly in which the thermal plate is incorporated includes an electrostatic clamping electrode layer and a temperature controlled base plate. Methods for manufacturing the thermal plate include bonding together ceramic or polymer sheets having planar thermal zones, positive, negative and common lines and vias.

    Abstract translation: 一种用于半导体等离子体处理装置中的衬底支撑组件的热板，包括以可伸缩复用布局布置的多个可独立控制的平面热区，以及用于独立地控制和供电平面加热器区的电子装置。 每个平面热区使用至少一个珀耳帖装置作为热电元件。 其中结合热板的基板支撑组件包括静电夹持电极层和温度控制的基板。 用于制造热板的方法包括将具有平面热区域，正，负和公共线路和通孔的陶瓷或聚合物片材结合在一起。

    HEATING PLATE WITH DIODE PLANAR HEATER ZONES FOR SEMICONDUCTOR PROCESSING
    5.
    发明专利
    HEATING PLATE WITH DIODE PLANAR HEATER ZONES FOR SEMICONDUCTOR PROCESSING 未知

    公开(公告)号：SG11201400620YA

    公开(公告)日：2014-04-28

    申请号：SG11201400620Y

    申请日：2012-09-17

    Applicant: LAM RES CORP

    Inventor： GAFF KEITH WILLIAM ,  COMENDANT KEITH

    IPC: C23F1/00

    Abstract: A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar heater zone uses at least one diode as a heater element. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic or polymer sheets having planar heater zones, power supply lines, power return lines and vias.

    EDGE SEAL FOR LOWER ELECTRODE ASSEMBLY
    8.
    发明专利
    EDGE SEAL FOR LOWER ELECTRODE ASSEMBLY 未知

    公开(公告)号：SG11201401669YA

    公开(公告)日：2014-09-26

    申请号：SG11201401669Y

    申请日：2012-10-19

    Applicant: LAM RES CORP

    Inventor： SCHAEFER DAVID ,  CHHATRE AMBARISH ,  LEE SUNG ,  GAFF KEITH WILLIAM ,  LAI BROOKE MESLER

    IPC: H01L23/12

    Abstract: An edge seal for sealing an outer surface of a lower electrode assembly configured to support a semiconductor substrate in a plasma processing chamber, the lower electrode assembly including an annular groove defined between a lower member and an upper member of the lower electrode assembly. The edge seal includes an elastomeric band configured to be arranged within the groove, the elastomeric band having an annular upper surface, an annular lower surface, an inner surface, and an outer surface. When the elastomeric band is in an uncompressed state, the outer surface of the elastomeric band is concave. When the upper and lower surfaces are axially compressed at least 1% such that the elastomeric band is in a compressed state, an outward bulging of the outer surface is not greater than a predetermined distance. The predetermined distance corresponds to a maximum outer diameter of the elastomeric band in the uncompressed state.

    EDGE SEAL FOR LOWER ELECTRODE ASSEMBLY
    10.
    发明专利
    EDGE SEAL FOR LOWER ELECTRODE ASSEMBLY 未知

    公开(公告)号：SG10201603085XA

    公开(公告)日：2016-05-30

    申请号：SG10201603085X

    申请日：2012-10-19

    Applicant: LAM RES CORP

    Inventor： SCHAEFER DAVID ,  CHHATRE AMBARISH ,  LEE SUNG ,  GAFF KEITH WILLIAM ,  LAI BROOKE MESLER

    Abstract: An edge seal for sealing an outer surface of a lower electrode assembly configured to support a semiconductor substrate in a plasma processing chamber, the lower electrode assembly including an annular groove defined between a lower member and an upper member of the lower electrode assembly. The edge seal includes an elastomeric band configured to be arranged within the groove, the elastomeric band having an annular upper surface, an annular lower surface, an inner surface, and an outer surface. When the elastomeric band is in an uncompressed state, the outer surface of the elastomeric band is concave. When the upper and lower surfaces are axially compressed at least 1% such that the elastomeric band is in a compressed state, an outward bulging of the outer surface is not greater than a predetermined distance. The predetermined distance corresponds to a maximum outer diameter of the elastomeric band in the uncompressed state.

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