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    APPARATUS FOR MEASURING DIELECTRIC PROPERTIES OF PARTS
    1.
    发明申请
    APPARATUS FOR MEASURING DIELECTRIC PROPERTIES OF PARTS 审中-公开
    用于测量部件介电特性的装置

    公开(公告)号：WO2009048517A3

    公开(公告)日：2009-06-18

    申请号：PCT/US2008011319

    申请日：2008-09-30

    Applicant: LAM RES CORP ,  KIM JAEHYUN ,  SATO ARTHUR H ,  COMENDANT KEITH ,  LIU QING ,  WU FEIYANG

    Inventor： KIM JAEHYUN ,  SATO ARTHUR H ,  COMENDANT KEITH ,  LIU QING ,  WU FEIYANG

    IPC: H01L21/66

    CPC classification number: G01N27/04 ,  G01R27/2623 ,  Y10T29/49117

    Abstract: A chamber formed from an electrically conductive material is connected to a ground potential. A hot electrode formed from an electrically conductive material is disposed within the chamber in a substantially horizontal orientation and is physically separated from the chamber. The hot electrode includes a top surface defined to support a part to be measured. A radiofrequency (RF) transmission rod is connected to extend from a bottom surface of the hot electrode through an opening in a bottom of the chamber and be physically separated from the chamber. The RF transmission rod is defined to transmit RF power from a conductor plate in an electrical components housing to the hot electrode. An upper electrode formed from an electrically conductive material is disposed within the chamber in a substantially horizontal orientation. The upper electrode is electrically connected to the chamber and is defined to be movable in a vertical direction.

    Abstract translation: 由导电材料形成的腔室连接到地电位。 由导电材料形成的热电极以基本上水平的方向布置在腔室内，并与腔室物理分离。 热电极包括限定为支撑待测量部分的顶表面。 射频（RF）传输杆连接成从热电极的底部表面延伸穿过腔室底部中的开口并与腔室物理分离。 RF传输杆被定义为将来自电气部件外壳中的导体板的RF功率传输到热电极。 由导电材料形成的上电极以基本上水平的方向布置在腔室内。 上电极电连接到腔室并且被限定为可在竖直方向上移动。

    METHOD OF TUNING THERMAL CONDUCTIVITY OF ELECTROSTATIC CHUCK SUPPORT ASSEMPLY
    2.
    发明申请
    METHOD OF TUNING THERMAL CONDUCTIVITY OF ELECTROSTATIC CHUCK SUPPORT ASSEMPLY 审中-公开
    调节静电栓支持热导率的方法

    公开(公告)号：WO2008027305A2

    公开(公告)日：2008-03-06

    申请号：PCT/US2007018711

    申请日：2007-08-24

    Applicant: LAM RES CORP ,  STEGER ROBERT ,  COMENDANT KEITH

    Inventor： STEGER ROBERT ,  COMENDANT KEITH

    IPC: H05B1/02 ,  B23K9/02 ,  H01L21/683

    CPC classification number: H01L21/67248 ,  H01L21/6831 ,  Y10T279/23

    Abstract: A method of tuning the thermal conductivity of an electrostatic chuck (ESC) support assembly comprises measuring the temperature at a plurality of sites on a support assembly surface in which each site is associated with a given cell, determining from the measurements any fractional reduction in area suggested for each cell, and removing material from the support assembly surface within each cell in accordance with the suggested fractional reduction in order to decrease thermal conductivity in that cell. The material removal can result in an improvement to the equilibrium temperature uniformity of the electrostatic chuck support assembly at the chuck surface of an electrostatic chuck bonded to the support assembly surface, or can result in an equilibrium temperature profile of the ESC support assembly which approaches or achieves a target equilibrium temperature profile. Thermal conductivity tuning can thus take place by a method comprising defining a cell structure, determining the target areal density of each cell and removing a fractional area of material to achieve the target areal density for that cell. Material removal can be effected by drilling, routing, laser machining or grit blast machining on an X-Y table.

    Abstract translation: 调整静电卡盘（ESC）支撑组件的导热性的方法包括测量支撑组件表面上的多个位置处的温度，其中每个部位与给定的电池相关联，从测量中确定任何部分面积的减小 建议每个电池，并根据建议的分数还原从每个电池中的支撑组件表面去除材料，以降低该电池中的热导率。 材料去除可以改善静电卡盘支撑组件在与支撑组件表面接合的静电卡盘的卡盘表面处的平衡温度均匀性，或者可以导致ESC支撑组件的平衡温度分布接近或接近 达到目标平衡温度曲线。 因此，热导率调节可以通过包括限定单元结构，确定每个单元的目标面积密度和去除材料的分数区域以实现该单元的目标面积密度的方法发生。 通过在X-Y台上进行钻孔，布线，激光加工或砂粒加工可以实现材料去除。

    APPARATUS FOR SPATIAL AND TEMPORAL CONTROL OF TEMPERATURE ON A SUBSTRATE
    4.
    发明申请
    APPARATUS FOR SPATIAL AND TEMPORAL CONTROL OF TEMPERATURE ON A SUBSTRATE 审中-公开
    用于空间和时间控制温度在基板上的装置

    公开(公告)号：WO2006073947A3

    公开(公告)日：2007-04-05

    申请号：PCT/US2005047109

    申请日：2005-12-13

    Applicant: LAM RES CORP ,  RICCI ANTHONY J ,  COMENDANT KEITH ,  TAPPAN JAMES

    Inventor： RICCI ANTHONY J ,  COMENDANT KEITH ,  TAPPAN JAMES

    IPC: H01L21/00

    CPC classification number: H01L21/6833 ,  H01J37/32724 ,  H01J2237/20 ,  H01L21/67103 ,  H01L21/6831 ,  H01L2221/683 ,  H05B3/26 ,  Y10T29/49146 ,  Y10T29/53252 ,  Y10T279/23

    Abstract: An apparatus for control of a temperature of a substrate has a temperature­controlled base, a heater, a metal plate, a layer of dielectric material. The heater is thermally coupled to an underside of the metal plate while being electrically insulated from the metal plate. A first layer of adhesive material bonds the metal plate and the heater to the top surface of the temperature controlled base. This adhesive layer is mechanically flexible, and possesses physical properties designed to balance the thermal energy of the heaters and an external process to provide a desired temperature pattern on the surface of the apparatus. A second layer of adhesive material bonds the layer of dielectric material to a top surface of the metal plate. This second adhesive layer possesses physical properties designed to transfer the desired temperature pattern to the surface of the apparatus. The layer of dielectric material forms an electrostatic clamping mechanism and supports the substrate.

    Abstract translation: 用于控制基板的温度的装置具有温度控制的基座，加热器，金属板，介电材料层。 加热器在与金属板电绝缘的同时热耦合到金属板的下侧。 第一层粘合材料将金属板和加热器粘合到温度受控基底的顶面。 该粘合剂层是机械柔性的，并且具有设计用于平衡加热器的热能和外部工艺的物理性能，以在设备的表面上提供期望的温度图案。 第二层粘合剂材料将介电材料层粘合到金属板的顶表面上。 该第二粘合剂层具有设计成将期望的温度图案转移到设备表面的物理性质。 电介质材料层形成静电夹持机构并支撑衬底。

    APPARATUS FOR AN OPTIMIZED PLASMA CHAMBER TOP PIECE
    5.
    发明申请
    APPARATUS FOR AN OPTIMIZED PLASMA CHAMBER TOP PIECE 审中-公开
    优化等离子体顶板的设备

    公开(公告)号：WO2006011991A3

    公开(公告)日：2006-08-24

    申请号：PCT/US2005020968

    申请日：2005-06-14

    Applicant: LAM RES CORP ,  SHARPLESS LEONARD J ,  COMENDANT KEITH

    Inventor： SHARPLESS LEONARD J ,  COMENDANT KEITH

    IPC: H01L21/306 ,  C23C16/00 ,  C23C16/505

    CPC classification number: H01J37/32522 ,  H01J37/321

    Abstract: A plasma processing system for processing a substrate is described. The plasma processing system includes a bottom piece (250) including a chuck (216) configured for holding the substrate (224). The plasma processing system also includes an induction coil (231) configured to generate an electromagnetic field (242) in order to create a plasma (220) for processing the substrate; and an optimized top piece (244) coupled to the bottom piece, the top piece further configured for a heating and cooling system (246). Wherein, the heating and cooling system is substantially shielded from the electromagnetic field by the optimized top piece, and the optimized top piece can substantially be handled by a single person.

    Abstract translation: 描述了一种用于处理衬底的等离子体处理系统。 等离子体处理系统包括底部件（250），其包括构造成用于保持衬底（224）的卡盘（216）。 等离子体处理系统还包括被配置为产生电磁场（242）的感应线圈（231），以便产生用于处理衬底的等离子体（220） 以及耦合到所述底部件的优化顶部件（244），所述顶部件还构造成用于加热和冷却系统（246）。 其中，加热和冷却系统通过优化的顶部部件基本上与电磁场屏蔽，并且优化的顶部部件可以基本上由单个人操作。

    THERMAL PLATE WITH PLANAR THERMAL ZONES FOR SEMICONDUCTOR PROCESSING
    6.
    发明申请
    THERMAL PLATE WITH PLANAR THERMAL ZONES FOR SEMICONDUCTOR PROCESSING 审中-公开
    具有用于半导体加工的平面热区的热板

    公开(公告)号：WO2013042027A3

    公开(公告)日：2015-06-25

    申请号：PCT/IB2012054903

    申请日：2012-09-17

    Applicant: LAM RES CORP ,  LAM RES AG ,  GAFF KEITH WILLIAM ,  COMENDANT KEITH ,  RICCI ANTHONY

    Inventor： GAFF KEITH WILLIAM ,  COMENDANT KEITH ,  RICCI ANTHONY

    IPC: H01L21/30 ,  H01C17/02 ,  H05B3/68

    CPC classification number: F25B21/04 ,  H01L21/0201 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H01L35/34 ,  Y10T29/49083 ,  Y10T29/49165

    Abstract: A thermal plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar thermal zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar thermal zone uses at least one Peltier device as a thermoelectric element. A substrate support assembly in which the thermal plate is incorporated includes an electrostatic clamping electrode layer and a temperature controlled base plate. Methods for manufacturing the thermal plate include bonding together ceramic or polymer sheets having planar thermal zones, positive, negative and common lines and vias.

    Abstract translation: 一种用于半导体等离子体处理装置中的衬底支撑组件的热板，包括以可伸缩复用布局布置的多个可独立控制的平面热区，以及用于独立地控制和供电平面加热器区的电子装置。 每个平面热区使用至少一个珀耳帖装置作为热电元件。 其中结合热板的基板支撑组件包括静电夹持电极层和温度控制的基板。 用于制造热板的方法包括将具有平面热区域，正，负和公共线路和通孔的陶瓷或聚合物片材结合在一起。

    IMPROVED SUBSTRATE TEMPERATURE CONTROL BY USING LIQUID CONTROLLED MULTIZONE SUBSTRATE SUPPORT
    7.
    发明申请
    IMPROVED SUBSTRATE TEMPERATURE CONTROL BY USING LIQUID CONTROLLED MULTIZONE SUBSTRATE SUPPORT 审中-公开
    液体控制多区衬底支撑改善衬底温度控制

    公开(公告)号：WO2010055441A3

    公开(公告)日：2010-07-08

    申请号：PCT/IB2009054876

    申请日：2009-11-03

    Applicant: LAM RES CORP ,  LAM RES AG ,  SINGH HARMEET ,  COMENDANT KEITH

    Inventor： SINGH HARMEET ,  COMENDANT KEITH

    IPC: C23C14/50 ,  C23C16/46

    CPC classification number: H01L21/67248 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/463 ,  C23C16/50 ,  C23C16/52 ,  H01J2237/2001 ,  H01L21/67109 ,  H01L21/6831

    Abstract: A substrate support useful in a reaction chamber of a plasma processing apparatus is provided. The substrate support comprises a base member and a heat transfer member overlying the base member. The heat transfer member has multiple zones to individually heat and cool each zone of the heat transfer member. An electrostatic chuck overlies the heat transfer member. The electrostatic chuck has a support surface for supporting a substrate in a reaction chamber of the plasma processing apparatus. A source of cold liquid and a source of hot liquid are in fluid communication with flow passages in each zone. A valve arrangement is operable to independently control temperature of the liquid by adjusting a mixing ratio of the hot liquid to the cold liquid circulating in the flow passages. In another embodiment, heating elements along a supply line and transfer lines heat a liquid from a liquid source before circulating in the flow passages.

    Abstract translation: 提供可用于等离子体处理设备的反应室中的衬底支撑件。 基板支撑件包括基座构件和覆盖基座构件的传热构件。 传热构件具有多个区域以分别加热和冷却传热构件的每个区域。 静电吸盘覆盖传热构件。 静电吸盘具有用于支撑等离子体处理设备的反应室中的基板的支撑表面。 冷液体源和热液体源与每个区域中的流动通道流体连通。 阀装置可操作以通过调节热流体与在流动通道中循环的冷流体的混合比来独立地控制液体的温度。 在另一个实施例中，沿供应管线和传输管线的加热元件在流动通道中循环之前加热来自液体源的液体。

    METHOD OF PROTECTING A BOND LAYER IN A SUBSTRATE SUPPORT ADAPTED FOR USE IN A PLASMA PROCESSING SYSTEM
    8.
    发明申请
    METHOD OF PROTECTING A BOND LAYER IN A SUBSTRATE SUPPORT ADAPTED FOR USE IN A PLASMA PROCESSING SYSTEM 审中-公开
    保护基板中的粘合层的方法，适用于等离子体处理系统

    公开(公告)号：WO2007011613A3

    公开(公告)日：2007-11-01

    申请号：PCT/US2006027090

    申请日：2006-07-13

    Applicant: LAM RES CORP ,  RICCI ANTHONY ,  TAPPAN JIM ,  COMENDANT KEITH

    Inventor： RICCI ANTHONY ,  TAPPAN JIM ,  COMENDANT KEITH

    IPC: B23K31/02 ,  B65B53/00 ,  C23C16/00 ,  F16B4/00 ,  H01L21/306

    CPC classification number: H01L21/76251 ,  H01L21/68757 ,  H01L21/68785

    Abstract: A method of protecting a bond layer in a substrate support adapted for use in a plasma processing system. The method includes the steps of attaching an upper member of a substrate support to a lower member of a substrate support with a bonding material. An adhesive is applied to an outer periphery of the upper member and to an upper periphery of the lower member, and a protective ring is positioned around the outer periphery of the upper member and the upper periphery of the lower member. The protective ring is originally fabricated with dimensions that provide mechanical stability and workability. The protective ring is then machined to an exact set of final dimensions consistent with the design of the substrate support application.

    Abstract translation: 一种保护适合在等离子体处理系统中使用的衬底支撑件中的结合层的方法。 该方法包括以下步骤：用接合材料将衬底支撑件的上部件附接到衬底支撑件的下部件。 在上部件的外周和下部件的上部周边上施加粘合剂，并且在上部件的外周和下部件的上部周边上设置保护环。 保护环最初制造时尺寸能够提供机械稳定性和可操作性。 然后将保护环机械加工成与衬底支撑应用的设计一致的精确的一组最终尺寸。

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