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    내화성 금속들 및 다른 고 표면 결합 에너지 재료들의 원자 층 에칭 및 평활화 (smoothing)
    1.
    发明公开
    내화성 금속들 및 다른 고 표면 결합 에너지 재료들의 원자 층 에칭 및 평활화 (smoothing) 审中-公开

    公开(公告)号：KR20200128185A

    公开(公告)日：2020-11-11

    申请号：KR20207031392

    申请日：2019-03-15

    Applicant: LAM RES CORP

    Inventor： YANG WENBING ,  MUKHERJEE TAMAL ,  BROURI MOHAND ,  TAN SAMANTHA ,  PAN YANG ,  KANARIK KEREN JACOBS

    IPC: H01L21/3213 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/67

    Abstract: 기판상의내화성금속또는다른고 표면결합에너지재료를에칭하는것은내화성금속/고 EO 표면의평활도 (smoothness) 를유지하거나상승시킬수 있고, 일부경우들에서극도의평활화를생성한다. 노출된내화성금속/고 EO 표면을갖는기판이제공된다. 내화성금속/고 EO 표면은표면을개질하고개질된내화성금속/고 EO 표면을형성하도록개질가스에노출된다. 개질된내화성금속/고 EO 표면은개질된내화성금속/고 EO 표면을제거한후 노출된내화성금속/고 EO 표면이개질가스에기판표면을노출하기전 기판표면만큼평활하거나 (smooth) 기판표면보다평활하도록, 아래에있는개질되지않은내화성금속/고 EO 표면에대해개질된내화성금속/고 EO 표면을우선적으로제거하도록에너제틱입자에노출된다.

    ATOMIC LAYER ETCHING OF TUNGSTEN AND OTHER METALS
    2.
    发明专利
    ATOMIC LAYER ETCHING OF TUNGSTEN AND OTHER METALS 未知

    公开(公告)号：SG10201606891SA

    公开(公告)日：2017-03-30

    申请号：SG10201606891S

    申请日：2016-08-18

    Applicant: LAM RES CORP

    Inventor： YANG WENBING ,  TAN SAMANTHA ,  KANARIK KEREN JACOBS ,  MARKS JEFFREY ,  KIM TAESEUNG ,  SHEN MEIHUA ,  LILL THORSTEN

    Abstract: Provided herein are methods of atomic layer etching (ALE) of metals including tungsten (W) and cobalt (Co). The methods disclosed herein provide precise etch control down to the atomic level, with etching a low as 1 Å to 10 Å per cycle in some embodiments. In some embodiments, directional control is provided without damage to the surface of interest. The methods may include cycles of a modification operation to form a reactive layer, followed by a removal operation to etch only this modified layer. The modification is performed without spontaneously etching the surface of the metal.

    ATOMIC LAYER ETCHING OF GaN AND OTHER III-V MATERIALS
    3.
    发明专利
    ATOMIC LAYER ETCHING OF GaN AND OTHER III-V MATERIALS 未知

    公开(公告)号：SG10201604524PA

    公开(公告)日：2017-01-27

    申请号：SG10201604524P

    申请日：2016-06-03

    Applicant: LAM RES CORP

    Inventor： YANG WENBING ,  OHBA TOMIHITO ,  TAN SAMANTHA ,  KANARIK KEREN JACOBS ,  MARKS JEFFREY ,  NOJIRI KAZUO

    Abstract: Provided herein are ALE methods of removing III-V materials such as gallium nitride (GaN) and related apparatus. In some embodiments, the methods involve exposing the III-V material to a chlorine-containing plasma without biasing the substrate to form a modified III-V surface layer; and applying a bias voltage to the substrate while exposing the modified III-V surface layer to a plasma to thereby remove the modified III-V surface layer. The disclosed methods are suitable for a wide range of applications, including etching processes for trenches and holes, fabrication of HEMTs, fabrication of LEDs, and improved selectivity in etching processes.

    ETCHING SUBSTRATES USING ALE AND SELECTIVE DEPOSITION
    6.
    发明专利
    ETCHING SUBSTRATES USING ALE AND SELECTIVE DEPOSITION 未知

    公开(公告)号：SG10201703480QA

    公开(公告)日：2017-11-29

    申请号：SG10201703480Q

    申请日：2017-04-28

    Applicant: LAM RES CORP

    Inventor： TAN SAMANTHA ,  YU JENGYI ,  WISE RICHARD ,  SHAMMA NADER ,  PAN YANG

    Abstract: Methods of and apparatuses for processing substrates having carbon-containing material using atomic layer etch and selective deposition are provided. Methods involve exposing a carbon-containing material on a substrate to an oxidant and igniting a first plasma to modify a surface of the substrate and exposing the modified surface to a second plasma at a bias power to remove the modified surface. Methods also involve selectively depositing a second carbon-containing material onto the substrate using a precursor having a chemical formula of CxHy, where x and y are integers greater than or equal to 1. ALE and selective deposition may be performed without breaking vacuum.

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