公开(公告)号：WO2012039744A3

公开(公告)日：2012-08-23

申请号：PCT/US2011001501

申请日：2011-08-25

Applicant: LAM RES CORP ,  DE LA LLERA ANTHONY ,  CARMAN DAVID ,  TAYLOR TRAVIS R ,  ULLAL SAURABH J ,  SINGH HARMEET

Inventor： DE LA LLERA ANTHONY ,  CARMAN DAVID ,  TAYLOR TRAVIS R ,  ULLAL SAURABH J ,  SINGH HARMEET

IPC: H01L21/3065

CPC classification number: H01L21/67069

Abstract: A plasma confinement ring assembly with a single movable lower ring can be used for controlling wafer area pressure in a capacitively coupled plasma reaction chamber wherein a wafer is supported on a lower electrode assembly and process gas is introduced into the chamber by an upper showerhead electrode assembly. The assembly includes an upper ring, the lower ring, hangers, hanger caps, spacer sleeves and washers. The lower ring is supported by the hangers and is movable towards the upper ring when the washers come into contact with the lower electrode assembly during adjustment of the gap between the upper and lower electrodes. The hanger caps engage upper ends of the hangers and fit in upper portions of hanger bores in the upper ring. The spacer sleeves surround lower sections of the hangers and fit within lower portions of the hanger bores. The washers fit between enlarged heads of the hangers and a lower surface of the lower ring. The spacer sleeves are dimensioned to avoid rubbing against the inner surfaces of the hanger bores during lifting of the lower ring.

Abstract translation: 可以使用具有单个可移动下环的等离子体约束环组件来控制电容耦合等离子体反应室中的晶片面积压力，其中晶片被支撑在下部电极组件上，并且处理气体通过上部喷头电极组件 。 组件包括上环，下环，吊架，衣架盖，间隔套和垫圈。 下环由吊架支撑，并且当在上下电极之间的间隙调节期间垫圈与下电极组件接触时，可以朝向上环移动。 衣架帽接合衣架的上端，并安装在上环的衣架孔的上部。 间隔套环绕悬挂架的下部并且安装在衣架孔的下部。 垫圈安装在衣架的扩大头部和下环的下表面之间。 间隔套的尺寸被设计成避免在提升下环期间摩擦挂钩孔的内表面。

公开(公告)号：WO2009058235A3

公开(公告)日：2009-06-18

申请号：PCT/US2008012173

申请日：2008-10-27

Applicant: LAM RES CORP ,  CERADYNE INC ,  TAYLOR TRAVIS R ,  SRINIVASAN MUKUND ,  KADKHODAYAN BOBBY ,  RAMANUJAM K Y ,  MIKIJELJ BILJANA ,  WU SHANGHUA

Inventor： TAYLOR TRAVIS R ,  SRINIVASAN MUKUND ,  KADKHODAYAN BOBBY ,  RAMANUJAM K Y ,  MIKIJELJ BILJANA ,  WU SHANGHUA

IPC: H01L21/3065

CPC classification number: C04B35/593 ,  C04B2235/3206 ,  C04B2235/3418 ,  C04B2235/72 ,  C04B2235/77 ,  H01J37/32467 ,  H01L21/3065

Abstract: A method of increasing mean time between cleans of a plasma etch chamber and chamber parts lifetimes is provided. Semiconductor substrates are plasma etched in the chamber while using at least one sintered silicon nitride component exposed to ion bombardment and/or ionized halogen gas. The sintered silicon nitride component includes high purity silicon nitride and a sintering aid consisting of silicon dioxide. A plasma processing chamber is provided including the sintered silicon nitride component. A method of reducing metallic contamination on the surface of a silicon substrate during plasma processing is provided with a plasma processing apparatus including one or more sintered silicon nitride components. A method of manufacturing a component exposed to ion bombardment and/or plasma erosion in a plasma etch chamber, comprising shaping a powder composition consisting of high purity silicon nitride and silicon dioxide and densifying the shaped component.

Abstract translation: 提供了增加等离子体蚀刻室清洁和室部件寿命之间的平均时间的方法。 在使用至少一个暴露于离子轰击的烧结氮化硅组分和/或离子化卤素气体的同时，在腔室中等离子蚀刻半导体衬底。 烧结的氮化硅组分包括高纯度氮化硅和由二氧化硅组成的烧结助剂。 提供包括烧结氮化硅部件的等离子体处理室。 在等离子体处理期间减少硅衬底表面上的金属污染的方法由等离子体处理设备提供，所述等离子体处理设备包括一个或多个烧结的氮化硅部件。 一种制造暴露于等离子体蚀刻室中的离子轰击和/或等离子体侵蚀的部件的方法，包括对由高纯度氮化硅和二氧化硅组成的粉末组合物进行成形并使成形部件致密化。

公开(公告)号：FR2953327B1

公开(公告)日：2013-02-15

申请号：FR1059905

申请日：2010-11-30

Applicant: LAM RES CORP

Inventor： KANG MICHAEL S ,  KELLOGG MICHAEL C ,  SALDANA MIGUEL A ,  TAYLOR TRAVIS R

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/683

Abstract: Un anneau de bord d'une chambre de gravure (100) au plasma comporte un anneau de couplage diélectrique et un anneau de bord conducteur. L'anneau diélectrique a une protubérance annulaire partant de sa périphérie intérieure et entoure un support de substrat (150). L'anneau conducteur entoure la protubérance de l'anneau diélectrique. Un substrat placé sur le support (150) le surplombe et est superposé à la protubérance de l'anneau diélectrique et à l'anneau conducteur. L'anneau diélectrique peut avoir une section rectangulaire. Les anneaux diélectrique et conducteur entourent un support. Un substrat placé sur le support (150) le surplombe et est superposé à une partie de l'anneau conducteur.

公开(公告)号：FR2953327A1

公开(公告)日：2011-06-03

申请号：FR1059905

申请日：2010-11-30

Applicant: LAM RES CORP

Inventor： KANG MICHAEL S ,  KELLOGG MICHAEL C ,  SALDANA MIGUEL A ,  TAYLOR TRAVIS R

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/683

Abstract: An outer cylindrical surface has lower and upper surfaces which are vertical to center axis line of outer side cylindrical surface and are extended from lower and upper peripheries of outer surface. An electrically conductive edge ring (280) has lower and upper surfaces which are vertical to center axis line, and are extended from lower and upper periphery. The annular surfaces are vertical to center axis line, and are extended from upper and lower peripheries. The cylindrical surface is extended from inner periphery of annular surfaces to outer peripheral edge.

公开(公告)号：SG188600A1

公开(公告)日：2013-04-30

申请号：SG2013020268

申请日：2011-08-25

Applicant: LAM RES CORP

Inventor： DE LA LLERA ANTHONY ,  CARMAN DAVID ,  TAYLOR TRAVIS R ,  ULLAL SAURABH J ,  SINGH HARMEET

Abstract: A plasma confinement ring assembly with a single movable lower ring can be used for controlling wafer area pressure in a capacitively coupled plasma reaction chamber wherein a wafer is supported on a lower electrode assembly and process gas is introduced into the chamber by an upper showerhead electrode assembly. The assembly includes an upper ring, the lower ring, hangers, hanger caps, spacer sleeves and washers. The lower ring is supported by the hangers and is movable towards the upper ring when the washers come into contact with the lower electrode assembly during adjustment of the gap between the upper and lower electrodes. The hanger caps engage upper ends of the hangers and fit in upper portions of hanger bores in the upper ring. The spacer sleeves surround lower sections of the hangers and fit within lower portions of the hanger bores. The washers fit between enlarged heads of the hangers and a lower surface of the lower ring. The spacer sleeves are dimensioned to avoid rubbing against the inner surfaces of the hanger bores during lifting of the lower ring.

公开(公告)号：SG171574A1

公开(公告)日：2011-06-29

申请号：SG2010089126

申请日：2010-11-30

Applicant: LAM RES CORP

Inventor： KANG MICHAEL S ,  KELLOGG MICHAEL C ,  SALDANA MIGUEL A ,  TAYLOR TRAVIS R

Abstract: An edge ring assembly used in a plasma etching chamber includes a dielectric coupling ring and a conductive edge ring. In one embodiment, the dielectric coupling ring has an annular projection extending axially upward from its inner periphery. The dielectric coupling ring is adapted to surround a substrate support in a plasma etching chamber. The conductive edge ring is adapted to surround the annular projection of the dielectric coupling ring. A substrate supported on the substrate support overhangs the substrate support and overlies the annular projection of the dielectric coupling ring and a portion of the conductive edge ring. In another embodiment, the dielectric coupling ring has a rectangular cross section. The dielectric coupling ring and the conductive edge ring are adapted to surround a substrate support in a plasma etching chamber. A substrate supported on the substrate support overhangs the substrate support and overlies a portion of the conductive edge ring. FIG. 2A