METHOD OF FORMING ION SENSORS
    1.
    发明申请

    公开(公告)号:WO2020037264A1

    公开(公告)日:2020-02-20

    申请号:PCT/US2019/046914

    申请日:2019-08-16

    Abstract: A method for manufacturing a sensor includes etching an insulator layer disposed over a substrate to define an opening exposing a sensor surface of a sensor disposed on the substrate, a native oxide forming on the sensor surface; annealing the sensor surface in a hydrogen containing atmosphere and annealing the sensor surface in an oxygen atmosphere at a temperature of not greater than 400°C. Further a conformal conductive layer may be formed on top of sensor surface, with parts being on top surface of insulator layer being removed, thus forming a cup-shaped electrode, the top surface of the cup-shaped electrode may be annealed in a hydrogen containing atmosphere and annealed in an oxygen atmosphere at a temperature of not greater than 400°C.

    METHOD FOR TREATING A SEMICONDUCTOR SENSOR ARRAY DEVICE
    2.
    发明申请
    METHOD FOR TREATING A SEMICONDUCTOR SENSOR ARRAY DEVICE 审中-公开
    用于处理半导体传感器阵列器件的方法

    公开(公告)号:WO2016154438A1

    公开(公告)日:2016-09-29

    申请号:PCT/US2016/024013

    申请日:2016-03-24

    Abstract: A method of treating a sensor array, including a plurality of sensors, preferably CHEMFETs, and an isolation structure, where a sensor of the plurality of sensors has a sensor pad exposed at a surface of the sensor array and the isolation structure is disposed between the sensor pad and sensor pads of other sensors of the plurality of sensors, comprises exposing the sensor pad and the isolation structure to a non-aqueous organo-silicon solution including an organo-silicon compound, preferably polydimethylsiloxane (PDMS), and a first non-aqueous carrier; applying an acid solution including an organic acid, preferably dodecyl benzene sulfonic acid (DBSA), and a second non-aqueous carrier to the sensor pad; and rinsing the acid solution from the sensor pad and the isolation structure.

    Abstract translation: 一种处理传感器阵列的方法,包括多个传感器,优选CHEMFET和隔离结构,其中多个传感器中的传感器具有在传感器阵列的表面处暴露的传感器垫,并且隔离结构设置在 所述传感器垫和所述多个传感器中的其它传感器的传感器垫包括将所述传感器垫和所述隔离结构暴露于非水有机硅溶液,所述非水有机硅溶液包括有机硅化合物,优选聚二甲基硅氧烷(PDMS) 含水载体; 将包含有机酸,优选十二烷基苯磺酸(DBSA)的酸溶液和第二非水载体施加到传感器垫; 以及从传感器垫和隔离结构冲洗酸溶液。

    METHOD OF FORMING ION SENSORS
    3.
    发明申请

    公开(公告)号:WO2020037259A1

    公开(公告)日:2020-02-20

    申请号:PCT/US2019/046905

    申请日:2019-08-16

    Inventor: WAGGONER, Phil

    Abstract: A method for manufacturing a sensor includes etching an insulator layer disposed over a substrate to define an opening exposing a sensor surface of a sensor disposed on the substrate, a native oxide forming on the sensor surface; sputtering the sensor surface with a noble gas to at least partially remove the native oxide from the sensor surface; and annealing the sensor surface in a hydrogen atmosphere.

    SURFACE TREATMENT OF SEMICONDUCTOR SENSORS
    4.
    发明申请
    SURFACE TREATMENT OF SEMICONDUCTOR SENSORS 审中-公开
    半导体传感器的表面处理

    公开(公告)号:WO2016004244A1

    公开(公告)日:2016-01-07

    申请号:PCT/US2015/038894

    申请日:2015-07-01

    CPC classification number: G01N27/414 G01N27/4145

    Abstract: A sensor component includes a sensor including a sensor surface and a reaction site in cooperation with the sensor and exposing the sensor surface. The reaction site including a reaction site surface. A surface agent is bound to the reaction site surface or the sensor surface. The surface agent includes a surface active functional group reactive with Bronsted base or Lewis acid functionality on the reaction site surface or the sensor surface and including distal functionality that does not have a donor electron pair.

    Abstract translation: 传感器部件包括传感器,传感器包括与传感器协作的传感器表面和反应部位,并暴露传感器表面。 反应位点包括反应位点表面。 表面剂与反应位点表面或传感器表面结合。 表面活性剂包括在反应位点表面或传感器表面上与布朗斯台德碱或路易斯酸官能团反应的表面活性官能团,并且包括不具有供体电子对的远端官能团。

    METHOD FOR MAKING A WELL DISPOSED OVER A SENSOR

    公开(公告)号:WO2018187511A1

    公开(公告)日:2018-10-11

    申请号:PCT/US2018/026141

    申请日:2018-04-04

    Abstract: A method for forming a well providing access to a sensor pad includes patterning a first photoresist layer over a dielectric structure disposed over the sensor pad; etching a first access into the dielectric structure and over the sensor pad, the first access having a first characteristic diameter; patterning a second photoresist layer over the dielectric structure; and etching a second access over the dielectric structure and over the sensor pad. The second access has a second characteristic diameter. The first and second accesses overlapping. A diameter ratio of the first characteristic diameter to the second characteristic diameter is not greater than 0.7. The first access exposes the sensor pad. The second access has a bottom depth less than a bottom depth of the first access.

    SURFACE TREATMENT OF SEMICONDUCTOR SENSORS
    9.
    发明公开
    SURFACE TREATMENT OF SEMICONDUCTOR SENSORS 审中-公开
    半导体传感器的表面处理

    公开(公告)号:EP3164701A1

    公开(公告)日:2017-05-10

    申请号:EP15738556.8

    申请日:2015-07-01

    CPC classification number: G01N27/414 G01N27/4145

    Abstract: A sensor component includes a sensor including a sensor surface and a reaction site in cooperation with the sensor and exposing the sensor surface. The reaction site including a reaction site surface. A surface agent is bound to the reaction site surface or the sensor surface. The surface agent includes a surface active functional group reactive with Bronsted base or Lewis acid functionality on the reaction site surface or the sensor surface and including distal functionality that does not have a donor electron pair.

    Abstract translation: 传感器组件包括传感器,传感器包括传感器表面和与传感器协作并暴露传感器表面的反应部位。 反应部位包括反应部位表面。 表面剂与反应部位表面或传感器表面结合。 表面活性剂包括表面活性官能团,其在反应位点表面或传感器表面上与布朗斯台德碱或路易斯酸官能团反应并且包括不具有施主电子对的远端官能团。

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