公开(公告)号：DE69936175T2

公开(公告)日：2008-01-24

申请号：DE69936175

申请日：1999-10-25

Applicant: LUCENT TECHNOLOGIES INC

Inventor： ARCHER VANCE DOLVAN ,  BELK NATHAN ,  CARROLL MICHAEL SCOTT ,  COCHRAN WILLIAM THOMAS ,  DENNIS DONALD C ,  FREI MICHEL RANJIT ,  GREGOR RICHARD WILLIAM ,  LIN WEN ,  MOINIAN SHAHRIAR ,  NAGY WILLIAM JOHN ,  NG KWOK K ,  PINTO MARK RICHARD ,  RICH DAVID ARTHUR ,  XIE YA-HONG ,  GOLDTHORP DAVID CLAYTON

IPC: H01L21/02 ,  H01L21/822 ,  H01L21/77 ,  H01L23/522 ,  H01L23/64 ,  H01L27/04 ,  H01L27/08

Abstract: The present invention provides for a method of manufacturing a simplified high Q inductor substrate and a semiconductor device having that substrate. The method for manufacturing the simplified high Q inductor substrate preferably comprises forming a base substrate over a semiconductor wafer, wherein the base substrate has a given dopant concentration and then forming an epitaxial (EPI) layer over the base substrate. The EPI layer includes epitaxially forming a first doped region in the EPI layer over the base substrate and then epitaxially forming a second doped region in the EPI layer over the first doped region. The first doped region has a dopant concentration greater than the given dopant concentration of the base substrate, and the second doped region has a dopant concentration less than the first doped region.

公开(公告)号：DE69936175D1

公开(公告)日：2007-07-12

申请号：DE69936175

申请日：1999-10-25

Applicant: LUCENT TECHNOLOGIES INC

Inventor： ARCHER VANCE DOLVAN ,  BELK NATHAN ,  CARROLL MICHAEL SCOTT ,  COCHRAN WILLIAM THOMAS ,  DENNIS DONALD C ,  FREI MICHEL RANJIT ,  GREGOR RICHARD WILLIAM ,  LIN WEN ,  MOINIAN SHAHRIAR ,  NAGY WILLIAM JOHN ,  NG KWOK K ,  PINTO MARK RICHARD ,  RICH DAVID ARTHUR ,  XIE YA-HONG ,  GOLDTHORP DAVID CLAYTON

IPC: H01L21/02 ,  H01L21/822 ,  H01L21/77 ,  H01L23/522 ,  H01L23/64 ,  H01L27/04 ,  H01L27/08

Abstract: The present invention provides for a method of manufacturing a simplified high Q inductor substrate and a semiconductor device having that substrate. The method for manufacturing the simplified high Q inductor substrate preferably comprises forming a base substrate over a semiconductor wafer, wherein the base substrate has a given dopant concentration and then forming an epitaxial (EPI) layer over the base substrate. The EPI layer includes epitaxially forming a first doped region in the EPI layer over the base substrate and then epitaxially forming a second doped region in the EPI layer over the first doped region. The first doped region has a dopant concentration greater than the given dopant concentration of the base substrate, and the second doped region has a dopant concentration less than the first doped region.