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    IMPROVEMENTS IN AND RELATING TO A SEMI-CONDUCTOR DEVICE
    8.
    发明专利
    IMPROVEMENTS IN AND RELATING TO A SEMI-CONDUCTOR DEVICE 未知

    公开(公告)号：GB1277686A

    公开(公告)日：1972-06-14

    申请号：GB2260070

    申请日：1970-05-11

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： YOKOZAWA MASAMI ,  KANO GOTA ,  FUJIWARA SHOHEI ,  TAKAMURA TORU ,  IIZUKA MUTSUO

    IPC: H01L21/00 ,  H01L21/24 ,  H01L29/00 ,  H01L29/06 ,  H01L29/73 ,  H01L29/84

    Abstract: 1277686 Semi-conductor devices MATSUSHITA ELECTRONICS CORP 11 May 1970 [13 May 1969] 22600/70 Heading H1K A PNP transistor (Fig. 6) comprises an N- layer 2 formed epitaxially or by diffusion on a P-silicon substrate 1, an insulating oxide layer 3 formed by pyrolysis of organo oxysilane on the N-layer, an annular window 4 opened in the oxide film and etched to a ditch in the N-layer, a diffusion window 5 opened within the ditch and boron diffused into the window and the ditch simultaneously to form an emitter region 6 and a separation layer 7; the ditch depth being less than the thickness of the N-layer so that the sum of ditch depth and layer thickness exceeds that of the N-layer; the base collector junction being separated from the exposed edge. A pressure-sensitive transistor (Fig. 7, not shown) comprises electrodes applied to the substrate and the emitter region and a Schottky junction base electrode of e.g. molybdenum film applied to the base region of the epitaxial layer, to which pressure means is applied to vary the charge injected into the base and thus the output voltage/current characteristic. A P-type separation layer is formed simultaneously with the emitter diffusion in a planar PNP-transistor to divide the base-collector junction.

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