公开(公告)号：JP2000049410A

公开(公告)日：2000-02-18

申请号：JP9851799

申请日：1999-04-06

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： ITO KUNIO ,  YURI MASAAKI ,  ISHIDA MASAHIRO ,  HASHIMOTO TADAO

IPC: H01S5/00 ,  H01S5/028 ,  H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser device of a long service life provided with high reliability. SOLUTION: In this device 100, protective layers 20a and 20b provided on the laser end face of a nitride semiconductor laser diode 10 are composed of Al1-x-y-zGaxInyBzN (0

公开(公告)号：JPH10341036A

公开(公告)日：1998-12-22

申请号：JP7529598

申请日：1998-03-24

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： HASHIMOTO TADAO ,  YURI MASAAKI ,  KONDO OSAMU ,  ISHIDA MASAHIRO

IPC: H01L21/20 ,  H01L21/338 ,  H01L29/812 ,  H01L33/12 ,  H01L33/32 ,  H01L33/34 ,  H01S5/00 ,  H01S5/323 ,  H01L33/00 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To greatly reduce dislocations which pierce a compd. semiconductor crystal layer formed on a substrate. SOLUTION: A substrate A for a light emitting diode comprises a sapphire substrate 10, an undoped GaN buffer layer 11 formed thereon, and an n-type compd. semiconductor crystal layer 12 formed thereon. A device structure B of the light emitting diode comprises a first n-type GaN clad layer 13 having p-type electrodes 17 thereon, an undoped In0.2 Ga0.8 N active layer 14 and a second p-type GaN clad layer 15 having n-type electrodes 16 thereon, formed in this order on the crystal layer 12. Trapezoidal recesses 18 are formed at regions facing the electrodes 16 on the substrate 10, and an upper part 10a of each recess 18 has a thickness which is not greater than that of the first clad layer 13.