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    1.
    发明专利
    未知

    公开(公告)号：DE2338244A1

    公开(公告)日：1974-02-14

    申请号：DE2338244

    申请日：1973-07-27

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： ITO KUNIO ,  INOUE MORIO

    IPC: C30B19/06 ,  C30B19/10 ,  H01L21/208 ,  H01L7/38

    Abstract: In the manufacturing of a multiple layer semiconductor device, such as semiconductor laser device formed by liquid phase epitaxial growth, the following improvement is offered, that is, after forming a first epitaxial growth layer by making a semiconductor substrate contact a first semiconductor solution, and prior to forming a second epitaxial growth layer by letting said first layer contact with a second semiconductor solution, said first layer is made to contact a third semiconductor solution or liquid metal, whereby the slope of impurity concentration in the vicinity of a junction formed between the first and the second layer can be satisfactorily steepened thereby attaining a good performance.

    SEMICONDUCTOR LASER DEVICE
    3.
    发明专利
    SEMICONDUCTOR LASER DEVICE 失效

    公开(公告)号：JPH06132607A

    公开(公告)日：1994-05-13

    申请号：JP27990792

    申请日：1992-10-19

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： NAITO HIROKI ,  KUME MASAHIRO ,  ITO KUNIO

    IPC: H01S5/00 ,  H01S5/223 ,  H01S3/18

    Abstract: PURPOSE:To provide a semiconductor laser device which oscillates in the band of 780nm and is used as a light source for an optical disk and the like, with low operating currents. CONSTITUTION:A first layer 5 for guiding light of p-type Ga0.5Al0.5As and a second layer 6 for guiding light of p-type In0.5Ga0.5P are formed on at least one side of the main surface of an n-type Ga0.85Al0.15As activated layer 4, and an n-type Ga0.4Al0.6As layer 7 for blocking currents which has a stripe-like window 7a is formed on the second layer 6 for guiding light, and a cladding layer 9 of p-type Ga0.5Al0.5As is formed in the stripe-like window 7a.

    SEMICONDUCTOR LASER DEVICE AND ITS MANUFACTURE
    6.
    发明专利
    SEMICONDUCTOR LASER DEVICE AND ITS MANUFACTURE 失效

    公开(公告)号：JPH0621568A

    公开(公告)日：1994-01-28

    申请号：JP17657892

    申请日：1992-07-03

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： KONDO OSAMU ,  NAITO HIROKI ,  KUME MASAHIRO ,  ITO KUNIO

    IPC: H01S5/00 ,  H01S3/18

    Abstract: PURPOSE:To provide a semiconductor laser device and its manufacturing method wherein single mode oscillation is obtained by low operation current driving, and high reliability is realized, in the case of operation of high output larger than or equal to 100mW which is necessary for a light source of optical recording, solid-state laser pumping, etc. CONSTITUTION:On a conductivity type Ga1-BAlBAs layer turning to an optical guide layer 4, a Ga1-XAlXAs layer turning to an active layer except he vicinity of an end surface is formed. On the active layer 5, a Ga1-CAlCAs layer turning to a light confinement layer 6 of the conductivity type opposite to the optical guide layer 4 and a Ga1-DAlDAs layer turning to a protective layer 7 is formed. On the optical guide layer 4 in the vicinity of the end surface and the protective layer 7, a first clad layer 8 of Ga1-Y1AlY1As and a second clad layer 9 of Ga1-Y2 AlY2As which have the conductivity type opposite to the optical guide layer 4 are formed in order. Further on the second clad layer 9, a current block layer 19 of Ga1-ZAlZAs which has the conductivity type opposite to the layer 9 and is provided with a stripe type window 10a is formed. The stripe type window 10a is provided with a Ga1-Y3AlY3As layer 12 of the same conductivity as the clad layer.

    FORMING METHOD FOR PROTECTIVE FILM OF SEMICONDUCTOR ELEMENT
    7.
    发明专利
    FORMING METHOD FOR PROTECTIVE FILM OF SEMICONDUCTOR ELEMENT 失效

    公开(公告)号：JPS6292447A

    公开(公告)日：1987-04-27

    申请号：JP23376585

    申请日：1985-10-18

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： HAMADA TAKESHI ,  ITO KUNIO ,  SHIMIZU YUICHI

    IPC: H01L21/471 ,  H01L21/314

    Abstract: PURPOSE:To eliminate complicated steps by using a selectively epitaxially growing method, and growing a crystal only on the prescribed crystal to be formed with a protective film. CONSTITUTION:Layers of a double hetero laser structure having active layer 3 on a P-type GaAs substrate 1 are grown by liquid-phase epitaxial method. N-type side electrode metal is deposited on the grown wafer, alloyed to form an N-type side ohmic electrode 6, P-type side electrode metal is deposited on the substrate side, alloyed to form a P-type side ohmic electrode 7. This wafer is cleaved in a bar shape having 300mum wide, rapidly set with the electrode 6 disposed upside in an MOCVD device, and semi-insulating ZnSe crystal is grown 3,500Angstrom thick on the layer 3. Since the portions except the cleaved surface are covered with the electrodes 6, 7, the electrodes act as masks, selectively epitaxial growth is executed, films are not formed on the electrodes 6, 7, and protective films 8 are simultaneously formed on the both cleaved surfaces.

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