公开(公告)号：DE1941912A1

公开(公告)日：1970-02-26

申请号：DE1941912

申请日：1969-08-18

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： KANO GOTA ,  IIZUKA MUTSUI ,  FUJIWARA SHOHEI ,  HASEGAWA HIROMASA ,  SAWAKI TSUKASA

IPC: H01L23/485 ,  H01L29/00 ,  H01L5/06

Abstract: A semi-conductor device, such as diode transistor, field effect transistor with a Schottky barrier, has a separation space formed underneath the insulating film covering a major surface portion of the semiconductor substrate. This separation space is disposed adjacent to a metal layer accommodated in a recess in the substrate and extending through an opening in the insulating film, so as to eliminate unreasonable reverse leakage current, by effectively insulating the Schottky barrier from the electric charge accumulation layer beneath the insulating film.