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公开(公告)号：DE60004722D1
公开(公告)日：2003-10-02
申请号：DE60004722
申请日：2000-04-13
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： YURI MASAAKI , IMAFUJI OSAMU , NAKAMURA SHINJI , ISHIDA MASAHIRO , ORITA KENJI
IPC: H01L21/20 , H01L21/205 , H01L31/18 , H01L33/00
Abstract: The present invention provides a method for producing a group III nitride compound semiconductor substrate including: (a) forming a first semiconductor film over a substrate, the first semiconductor film made of a first group III nitride compound semiconductor and provided with a step; (b) forming a second semiconductor film made of a second group III nitride compound semiconductor having a different thermal expansion coefficient from that of the first group III nitride compound semiconductor on the first semiconductor film; and (c) cooling the substrate and separating the second semiconductor film from the first semiconductor film. Thus, a large-area group III nitride compound semiconductor substrate can be produced in high yields and with high reproducibility.
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公开(公告)号：DE60004722T2
公开(公告)日：2004-06-17
申请号：DE60004722
申请日：2000-04-13
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： YURI MASAAKI , IMAFUJI OSAMU , NAKAMURA SHINJI , ISHIDA MASAHIRO , ORITA KENJI
IPC: H01L21/20 , H01L21/205 , H01L31/18 , H01L33/00
Abstract: The present invention provides a method for producing a group III nitride compound semiconductor substrate including: (a) forming a first semiconductor film over a substrate, the first semiconductor film made of a first group III nitride compound semiconductor and provided with a step; (b) forming a second semiconductor film made of a second group III nitride compound semiconductor having a different thermal expansion coefficient from that of the first group III nitride compound semiconductor on the first semiconductor film; and (c) cooling the substrate and separating the second semiconductor film from the first semiconductor film. Thus, a large-area group III nitride compound semiconductor substrate can be produced in high yields and with high reproducibility.
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公开(公告)号：JP2000200946A
公开(公告)日：2000-07-18
申请号：JP30171299
申请日：1999-10-22
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： NAKAMURA SHINJI , YURI MASAAKI , ORITA KENJI
Abstract: PROBLEM TO BE SOLVED: To manufacture a highly precise waveguide structure with good control and thereby enable single transverse mode oscillation, by forming a second conductive type first semiconductor layer, whose Al composition ratio is smaller than that of a first conductive type etching stop layer on the etch stopping layer. SOLUTION: Since an etch stopping layer 17 whose Al composition ratio is larger than that of an n-type current blocking layer 12 is formed immediately below the n-type current blocking layer 12, etching of the n-type current blocking layer 12 can be blocked in the etch stopping layer 17. Therefore, it is possible to accurately and uniformly control the etching depth of the n-type current blocking layer 12 and to obtain a waveguide structure which is more precise than a conventional one. A first p-type clad layer 8 whose Al composition ratio is smaller than that of the etch stopping layer 17 is formed immediately below the etching stop layer 17. Since the lower the Al composition ratio is, the is larger the refractive index, therefore, light confinement can be carried out well in this structure.
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公开(公告)号：JP2000357663A
公开(公告)日：2000-12-26
申请号：JP2000108497
申请日：2000-04-10
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： YURI MASAAKI , KONDO OSAMU , NAKAMURA SHINJI , ISHIDA MASAHIRO , ORITA KENJI
Abstract: PROBLEM TO BE SOLVED: To manufacture a large-area III nitride base compound semiconductor substrate with a satisfactory yield and satisfactory reproducibility. SOLUTION: First, a first semiconductor film 13 that is formed of a first III nitride based compound semiconductor having a stepped portion 13c is formed on a substrate 11 (Fig. b). Thereafter, a second semiconductor film 14a composed of a second III nitride based compound semiconductor having a thermal expansion coefficient that is different from that of the first III nitride based compound semiconductor is formed (Fig. c). Thereafter, the substrate 11 is cooled, and the second semiconductor film 14a is isolated from the first semiconductor film 13 to obtain the III nitride based compound semiconductor substrate 14.
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公开(公告)号：JP2000277802A
公开(公告)日：2000-10-06
申请号：JP7912299
申请日：1999-03-24
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： NAKAMURA SHINJI , YURI MASAAKI , KONDO OSAMU , ISHIDA MASAHIRO , ORITA KENJI
IPC: H01L21/28 , H01L33/06 , H01L33/12 , H01L33/32 , H01L33/36 , H01L33/40 , H01S5/00 , H01S5/042 , H01S5/323 , H01S5/343 , H01L33/00
Abstract: PROBLEM TO BE SOLVED: To lower resistivity in p- and n-type ohmic electrodes of a semiconductor device composed of a III-V nitride compound semiconductor. SOLUTION: On a sapphire substrate 1, an undoped GaN buffer layer 2, an undoped GaN layer 3, a p-type doped GaN 4a doped with Mg, which is a p-type impurity, are sequentially grown in crystallized states (a). Then a p-type electrode 9 is formed by sequentially vapor-depositing alloy film 8 made of Ni and Mg and an Au film 6 on the p-type doped GaN film 4a (b). Thereafter, the p-type doped GaN layer 4a is changed into a low-resistance GaN layer 4 by activating Mg contained in the layer 4a by expelling hydrogen from the layer 4a by subjecting it to temperature raising and lowering of the temperature of the substrate 1 between 70 deg.C and room temperature three times.
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Patent Agency Ranking
公开(公告)号：JP2001176809A
公开(公告)日：2001-06-29
申请号：JP2000303217
申请日：2000-10-03
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： ISHIDA MASAHIRO , NAKAMURA SHINJI , ORITA KENJI , KONDO OSAMU , YURI MASAAKI
IPC: C23C16/34 , H01L21/205 , H01S5/323 , H01S5/343
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device which has further reduced defects. SOLUTION: This semiconductor device is equipped with a substrate 102 which has on its surface a hollow in a closed shape, when viewed from a substrate normal direction, and a semiconductor layer 103 formed on the surface of the substrate 102 by crystal growth at least from internal surface (105, 106, and 107) of a hollow 104.
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公开(公告)号：JP2000156524A
公开(公告)日：2000-06-06
申请号：JP13384499
申请日：1999-05-14
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： ISHIDA MASAHIRO , NAKAMURA SHINJI , ORITA KENJI , KONDO OSAMU , YURI MASAAKI
IPC: H01L21/205 , H01L21/20 , H01L21/338 , H01L29/04 , H01L29/20 , H01L29/205 , H01L29/812 , H01L29/861 , H01L33/00 , H01L33/06 , H01L33/12 , H01L33/14 , H01L33/16 , H01L33/22 , H01L33/32 , H01S5/223 , H01S5/323 , H01S5/343
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device with high performance and reliability by reducing lattice defects in an active region of a semiconductor element. SOLUTION: This device has lattice defect (a) and comprises a substrate 1 having steps on its surface, an active layer 5 formed on the substrate 1 and consisting of an InGaN quantum well having a low defect region (b) on the steps and a semiconductor element on the substrate 1. An active region 5a of the semiconductor element is formed in the low defect region (b). This active region 5a is preferably formed on a flat part of the active layer consisting of the InGaN quantum well.
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公开(公告)号：JP2000315817A
公开(公告)日：2000-11-14
申请号：JP12213899
申请日：1999-04-28
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： ISHIDA MASAHIRO , YURI MASAAKI , KONDO OSAMU , NAKAMURA SHINJI , ORITA KENJI
Abstract: PROBLEM TO BE SOLVED: To enhance translucence by providing an electrode including a carbon film on a specified semiconductor layer having conductivity thereby suppressing occurrence of surge breakdown and defect and decreasing electric resistance. SOLUTION: A buffer layer 2 of GaN and an Si doped n-type clad layer 3 of AlxGa1-x-yInyN (0
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公开(公告)号：JP2000200947A
公开(公告)日：2000-07-18
申请号：JP31172399
申请日：1999-11-01
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： YURI MASAAKI , KONDO OSAMU , NAKAMURA SHINJI , ORITA KENJI
Abstract: PROBLEM TO BE SOLVED: To obtain a semiconductor device by which light can be confined in an active layer, in which cracks are hardly generated by a method, wherein the difference between the composition ratio of Al in a substrate and the compositional ratio of Al in a semiconductor is set at a specific value or lower. SOLUTION: The difference between the composition ratio of an n-type AlxGa1-xN (where 0
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公开(公告)号：JPH11354458A
公开(公告)日：1999-12-24
申请号：JP16312098
申请日：1998-06-11
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： YURI MASAAKI , KONDO OSAMU , ISHIDA MASAHIRO , NAKAMURA SHINJI , ORITA KENJI
IPC: H01L21/205 , H01L33/32 , H01L33/40 , H01L33/00
Abstract: PROBLEM TO BE SOLVED: To exclude effectively at a comparably low temperature hydrogen from the inside of a III-V semiconductor crystal without performing any heat treatment between its crystal growth and electrode formation, by forming a conductive thin film for adsorbing hydrogen therein on a conductive III-V nitride semiconductor including p-type magnesium which is formed on a substrate. SOLUTION: In a p-type III-V nitride semiconductor, there are formed in succession on a GaN substrate 1 an undoped GaN layer 2, a Mg-added GaN layer 3, and a Pd film 5. That is, in an MOCVD apparatus of an atmospheric pressure, heating the GaN substrate 1 under the atmosphere comprising a mixture gas of NH3 and hydrogen, the surface of the GaN substrate 1 is cleaned and trimethyl gallium is fed thereto to form the undoped GaN layer 2. Then, feeding thereto Cp2 Mg, the Mg-added GaN layer 3 is formed. Next, the GaN substrate 1 is taken into an electron-beam deposition apparatus to form the Pd thin film 5 on the GaN layer 3. Subsequently, the heat treatment of the GaN substrate 1 is performed in an atmosphere of a nitrogen gas.
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