中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

19 records (took 0.016 seconds)

    MICROMACHINE COMPONENT
    1.
    发明专利
    MICROMACHINE COMPONENT 审中-公开

    公开(公告)号：JP2003152488A

    公开(公告)日：2003-05-23

    申请号：JP2002228011

    申请日：2002-08-05

    Applicant: MEMSCAP

    Inventor： MHANI AHMED ,  FEDELI JEAN-MARC

    IPC: B81B7/02 ,  H01F21/06 ,  H01F27/00 ,  H03H5/12 ,  H03H7/12 ,  H03H9/02 ,  H03H9/24

    Abstract: PROBLEM TO BE SOLVED: To provide a micromachine component which is increased in resonance frequency for a filter manufactured by using an MEMS (Microelectromechanical System). SOLUTION: The micromachine component 1 is manufactured on a semiconductor motherboard 10, is provided with input terminals 7, 8 and output terminals 26, 27, and exhibits a filtering function. The component 1 is provided with a metal input coil 2 which is connected to the terminals 7, 8 and can generate a magnetic field when a current flows therethrough; a movable constituent 3 which is connected to the board by at least one deformation portion, includes at least one region 11, 12 formed of a ferromagnetic material, and can move under a force to which the region 11 made of a ferromagnetic material is exposed and which is generated by the magnetic field generated by an input coil 2; and an output member 4 which is connected to the terminals 26, 27 and constitutes a magnetic field sensor capable of generating an electric signal being changeable by the movement of the constituent 3.

    MICROELECTRO-MECHANICAL COMPONENT
    2.
    发明专利
    MICROELECTRO-MECHANICAL COMPONENT 审中-公开

    公开(公告)号：JP2003133880A

    公开(公告)日：2003-05-09

    申请号：JP2002192488

    申请日：2002-07-01

    Applicant: MEMSCAP

    Inventor： MHANI AHMED ,  FEDELI JEAN-MARC

    IPC: B81B7/02 ,  H01H50/00 ,  H01H59/00 ,  H03H5/12 ,  H03H9/02 ,  H03H9/24

    Abstract: PROBLEM TO BE SOLVED: To provide an MEMS component. SOLUTION: This microelectro-mechanical component 1 formed at the substrate of a semiconductor base, and provided with two input terminals and two output terminals is constituted of a movable element 4 connected to the substrate by at least one deformable part, and provided with a region constituted of ferromagnetic materials, a metallic coil 5 connected to each input terminal or each output terminal 30 and 3, and allowed to magnetically interact with the ferromagnetic region of the movable element 4, and a face forming complementarily oppositely disposed first electrodes 6 connected to one of either each output terminal or each input terminal, and mounted on the movable element 4. The complementary face forms a second electrode connected to the other of either each output terminal or input terminal, and allowed to interact with the first electrodes 6.

    INTEGRATED CIRCUIT WITH INCORPORATED INDUCTIVE ELEMENT AND MANUFACTURE OF THE SAME
    3.
    发明专利
    INTEGRATED CIRCUIT WITH INCORPORATED INDUCTIVE ELEMENT AND MANUFACTURE OF THE SAME 失效

    公开(公告)号：JP2000277693A

    公开(公告)日：2000-10-06

    申请号：JP2000080808

    申请日：2000-03-22

    Applicant: MEMSCAP ,  PLANHEAD SILMAG PHS

    Inventor： BASTERES LAURENT ,  MHANI AHMED ,  VALENTIN FRANCOIS ,  KARAM JEAN-MICHEL

    IPC: H01L21/822 ,  H01F17/00 ,  H01L21/02 ,  H01L23/522 ,  H01L27/04

    Abstract: PROBLEM TO BE SOLVED: To provide a compact monolithic integrated circuit with superior electrical characteristics, particularly Q-values, of inductive elements with respect to electrical characteristics. SOLUTION: A monolithic integrated circuit 1 with an incorporated inductive element 20 has a semiconductor substrate layer 2, a passivation layer 4 covering the semiconductor substrate layer 2 and metallic contact pads 5 which are connected to the substrate 2 and pierce the passivation layer 4, in order to have the pad surfaces on the same plane as the top surface 6 of the passivation layer 4. The integrated circuit also includes the whirlpool shape winding 20, formed in a plane parallel with a top surface 6 of the passivation layer 4. The winding 20 consists of copper turns 21-23, 27 and 28 with thicknesses of not smaller than 10 μm. The ends of the winding 20 are extended downward from the winding plane, so as to form extended parts 12 connected to the contact pads 5.

    6.
    发明专利
    未知

    公开(公告)号：FR2791470A1

    公开(公告)日：2000-09-29

    申请号：FR9903762

    申请日：1999-03-23

    Applicant: MEMSCAP

    Inventor： BASTERES LAURENT ,  MHANI AHMED ,  VALENTIN FRANCOIS ,  KARAM JEAN MICHEL

    IPC: H01F17/00 ,  H01L21/02 ,  H01L23/522 ,  H01L27/04 ,  H01L21/822 ,  H01L21/30 ,  H01L49/00 ,  H01F5/00

    Abstract: An IC (1), with a thick copper induction winding (20) located above a passivation layer (6) and having depending ends (12) connected to contact pads (5), is new. A new monolithic IC (1) has metallic contact pads (5), extending from flush with the upper surface (6) of a passivation layer (4) to an underlying semiconductor substrate layer (2), and an induction coil winding (20) which is located in a plane parallel to the passivation layer upper surface (6) and which consists of copper turns (21, 22, 23, 27, 28) of greater than 10 microns thickness, the winding ends (12) extending below the winding plane for connection to the contact pads (5). An Independent claim is also included for manufacturing a monolithic IC incorporating an inductive component by: (a) depositing a polyimide or benzocyclobutene layer on a semiconductor substrate (2) which is covered with a passivation layer (4) and which has metallic contact pads (5) extending from the passivation layer upper surface (6) to the substrate (2); (b) depositing a silica layer (16) on the polyimide or benzocyclobutene layer; (c) forming openings in the silica and polyimide or benzocyclobutene layers down to the contact pads (5); (d) applying a metal growth layer and a photosensitive resin layer on the structure; (e) exposing and developing the resin to form the lower face of the inductive component; (f) electrodepositing a copper layer on the exposed zones of the metal growth layer to form the inductive component strip; and (g) removing residues of the resin and the metal growth layer.

    COMPOSANT MICROELECTOMECANIQUE
    8.
    发明专利
    COMPOSANT MICROELECTOMECANIQUE 未知

    公开(公告)号：CA2389820A1

    公开(公告)日：2003-01-02

    申请号：CA2389820

    申请日：2002-06-17

    Applicant: MEMSCAP

    Inventor： FEDELI JEAN-MARC ,  MHANI AHMED

    IPC: B81B7/02 ,  H01H50/00 ,  H01H59/00 ,  H03H5/12 ,  H03H9/02 ,  H03H9/24 ,  H03H9/125 ,  B81B3/00

    Abstract: Composant microélectromécanique (1) assurant des fonctions de filtrage, réalisé sur un substrat à base de matériau semi-conducteur, et comportant de ux bornes d'entrée et deux bornes de sortie, caractérisé en ce qu'il comporte également : .cndot. un équipage mobile (4) relié au substrat par au moins une portion déformable, et incluant une région réalisée en un matériau ferromagnétique ; .cndot. un bobinage métallique (5) relié aux bornes d'entrée ou de sortie (3 0, 31), apte à interagir magnétiquement avec la région en matériau ferromagnétique de l'équipage mobile (4) ; .cndot. une surface formant une première électrode (6), reliée à une des bornes de sortie ou d'entrée, disposée en regard d'une surface complémentaire solidair e de l'équipage mobile (4), cette surface complémentaire formant une seconde électrode reliée à l'autre des bornes de sortie ou d'entrée, et étant apte à interagir électrostatiquement avec la première électrode (6).

    9.
    发明专利
    未知

    公开(公告)号：FR2791470B1

    公开(公告)日：2001-06-01

    申请号：FR9903762

    申请日：1999-03-23

    Applicant: MEMSCAP

    Inventor： BASTERES LAURENT ,  MHANI AHMED ,  VALENTIN FRANCOIS ,  KARAM JEAN MICHEL

    IPC: H01F17/00 ,  H01L21/02 ,  H01L23/522 ,  H01L27/04 ,  H01L21/822 ,  H01L21/30 ,  H01L49/00 ,  H01F5/00

    Abstract: An IC (1), with a thick copper induction winding (20) located above a passivation layer (6) and having depending ends (12) connected to contact pads (5), is new. A new monolithic IC (1) has metallic contact pads (5), extending from flush with the upper surface (6) of a passivation layer (4) to an underlying semiconductor substrate layer (2), and an induction coil winding (20) which is located in a plane parallel to the passivation layer upper surface (6) and which consists of copper turns (21, 22, 23, 27, 28) of greater than 10 microns thickness, the winding ends (12) extending below the winding plane for connection to the contact pads (5). An Independent claim is also included for manufacturing a monolithic IC incorporating an inductive component by: (a) depositing a polyimide or benzocyclobutene layer on a semiconductor substrate (2) which is covered with a passivation layer (4) and which has metallic contact pads (5) extending from the passivation layer upper surface (6) to the substrate (2); (b) depositing a silica layer (16) on the polyimide or benzocyclobutene layer; (c) forming openings in the silica and polyimide or benzocyclobutene layers down to the contact pads (5); (d) applying a metal growth layer and a photosensitive resin layer on the structure; (e) exposing and developing the resin to form the lower face of the inductive component; (f) electrodepositing a copper layer on the exposed zones of the metal growth layer to form the inductive component strip; and (g) removing residues of the resin and the metal growth layer.

Patent Agency Ranking