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    VARIABLE CAPACITOR OR MICRO SWITCH TYPE ELECTRONIC MICRO COMPONENT AND MANUFACTURING METHOD THEREFOR
    1.
    发明专利
    VARIABLE CAPACITOR OR MICRO SWITCH TYPE ELECTRONIC MICRO COMPONENT AND MANUFACTURING METHOD THEREFOR 失效

    公开(公告)号：JP2002052500A

    公开(公告)日：2002-02-19

    申请号：JP2001143989

    申请日：2001-05-14

    Applicant: MEMSCAP ,  PLANHEAD SILMAG PHS

    Inventor： CHARRIER CATHERINE ,  BOUCHON ERIC ,  CAMPO ALAIN ,  IMBERT GUY ,  VALENTIN FRANCOIS ,  BASTERES LAURENT

    IPC: B81C1/00 ,  B81B3/00 ,  H01G5/16 ,  H01H1/00 ,  H01H11/00 ,  H01H13/52

    Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing an electronic micro component with a fixed plate and a deformable film facing each other under a room temperature. SOLUTION: This manufacturing method is characterized in having a stage of depositing a first metal layer to become the fixed plate on an oxide layer 2, a stage of depositing metal ribbons 10 and 11 acting as spacers between the fixed plate 1 and the deformable film 20 at least in a part of the circumferential edge of the fixed plate 1 in its both sides, a stage of depositing a sacrifice resin layer 15 on all over the fixed plate; a stage of forming a plurality of wells on the surface of the sacrifice resin layer by lithography, a stage of depositing, at least, a metal region which forms the deformable film 20 in the wells formed on the sacrifice resin layer 15 and extends between the metal ribbons disposed in both sides of the fixed plate; and a stage of removing the sacrifice layer.

    INTEGRATED CIRCUIT WITH INCORPORATED INDUCTIVE ELEMENT AND MANUFACTURE OF THE SAME
    2.
    发明专利
    INTEGRATED CIRCUIT WITH INCORPORATED INDUCTIVE ELEMENT AND MANUFACTURE OF THE SAME 失效

    公开(公告)号：JP2000277693A

    公开(公告)日：2000-10-06

    申请号：JP2000080808

    申请日：2000-03-22

    Applicant: MEMSCAP ,  PLANHEAD SILMAG PHS

    Inventor： BASTERES LAURENT ,  MHANI AHMED ,  VALENTIN FRANCOIS ,  KARAM JEAN-MICHEL

    IPC: H01L21/822 ,  H01F17/00 ,  H01L21/02 ,  H01L23/522 ,  H01L27/04

    Abstract: PROBLEM TO BE SOLVED: To provide a compact monolithic integrated circuit with superior electrical characteristics, particularly Q-values, of inductive elements with respect to electrical characteristics. SOLUTION: A monolithic integrated circuit 1 with an incorporated inductive element 20 has a semiconductor substrate layer 2, a passivation layer 4 covering the semiconductor substrate layer 2 and metallic contact pads 5 which are connected to the substrate 2 and pierce the passivation layer 4, in order to have the pad surfaces on the same plane as the top surface 6 of the passivation layer 4. The integrated circuit also includes the whirlpool shape winding 20, formed in a plane parallel with a top surface 6 of the passivation layer 4. The winding 20 consists of copper turns 21-23, 27 and 28 with thicknesses of not smaller than 10 μm. The ends of the winding 20 are extended downward from the winding plane, so as to form extended parts 12 connected to the contact pads 5.

    5.
    发明专利
    未知

    公开(公告)号：FR2808919A1

    公开(公告)日：2001-11-16

    申请号：FR0006142

    申请日：2000-05-15

    Applicant: MEMSCAP

    Inventor： CHARRIER CATHERINE ,  BOUCHON ERIC ,  CAMPO ALAIN ,  IMBERT GUY ,  VALENTIN FRANCOIS ,  BASTERES LAURENT

    IPC: B81B3/00 ,  H01G5/16 ,  B81C1/00 ,  H01H1/00 ,  H01H11/00 ,  H01H13/52 ,  H01G7/06

    Abstract: Process for fabricating electronic components, of the variable capacitor or microswitch type, comprising a fixed plate (1) and a deformable membrane (20) which are located opposite each other, which comprises the following steps, consisting in: depositing a first metal layer on an oxide layer (2), said first metal layer being intended to form the fixed plate; depositing a metal ribbon (10, 11) on at least part of the periphery and on each side of the fixed plate (1), said ribbon being intended to serve as a spacer between the fixed plate (1) and the deformable membrane (20); depositing a sacrificial resin layer (15) over at least the area of said fixed plate (1); generating, by lithography, a plurality of wells in the surface of said sacrificial resin layer; depositing, by electrolysis, inside the wells formed in the sacrificial resin (15), at least one metal region intended to form the deformable membrane (20), this metal region extending between sections of the metal ribbon (10, 11) which are located on each side of said fixed plate (1); removing the sacrificial resin layer (15).

    6.
    发明专利
    未知

    公开(公告)号：FR2791470B1

    公开(公告)日：2001-06-01

    申请号：FR9903762

    申请日：1999-03-23

    Applicant: MEMSCAP

    Inventor： BASTERES LAURENT ,  MHANI AHMED ,  VALENTIN FRANCOIS ,  KARAM JEAN MICHEL

    IPC: H01F17/00 ,  H01L21/02 ,  H01L23/522 ,  H01L27/04 ,  H01L21/822 ,  H01L21/30 ,  H01L49/00 ,  H01F5/00

    Abstract: An IC (1), with a thick copper induction winding (20) located above a passivation layer (6) and having depending ends (12) connected to contact pads (5), is new. A new monolithic IC (1) has metallic contact pads (5), extending from flush with the upper surface (6) of a passivation layer (4) to an underlying semiconductor substrate layer (2), and an induction coil winding (20) which is located in a plane parallel to the passivation layer upper surface (6) and which consists of copper turns (21, 22, 23, 27, 28) of greater than 10 microns thickness, the winding ends (12) extending below the winding plane for connection to the contact pads (5). An Independent claim is also included for manufacturing a monolithic IC incorporating an inductive component by: (a) depositing a polyimide or benzocyclobutene layer on a semiconductor substrate (2) which is covered with a passivation layer (4) and which has metallic contact pads (5) extending from the passivation layer upper surface (6) to the substrate (2); (b) depositing a silica layer (16) on the polyimide or benzocyclobutene layer; (c) forming openings in the silica and polyimide or benzocyclobutene layers down to the contact pads (5); (d) applying a metal growth layer and a photosensitive resin layer on the structure; (e) exposing and developing the resin to form the lower face of the inductive component; (f) electrodepositing a copper layer on the exposed zones of the metal growth layer to form the inductive component strip; and (g) removing residues of the resin and the metal growth layer.

    8.
    发明专利
    未知

    公开(公告)号：FR2791470A1

    公开(公告)日：2000-09-29

    申请号：FR9903762

    申请日：1999-03-23

    Applicant: MEMSCAP

    Inventor： BASTERES LAURENT ,  MHANI AHMED ,  VALENTIN FRANCOIS ,  KARAM JEAN MICHEL

    IPC: H01F17/00 ,  H01L21/02 ,  H01L23/522 ,  H01L27/04 ,  H01L21/822 ,  H01L21/30 ,  H01L49/00 ,  H01F5/00

    Abstract: An IC (1), with a thick copper induction winding (20) located above a passivation layer (6) and having depending ends (12) connected to contact pads (5), is new. A new monolithic IC (1) has metallic contact pads (5), extending from flush with the upper surface (6) of a passivation layer (4) to an underlying semiconductor substrate layer (2), and an induction coil winding (20) which is located in a plane parallel to the passivation layer upper surface (6) and which consists of copper turns (21, 22, 23, 27, 28) of greater than 10 microns thickness, the winding ends (12) extending below the winding plane for connection to the contact pads (5). An Independent claim is also included for manufacturing a monolithic IC incorporating an inductive component by: (a) depositing a polyimide or benzocyclobutene layer on a semiconductor substrate (2) which is covered with a passivation layer (4) and which has metallic contact pads (5) extending from the passivation layer upper surface (6) to the substrate (2); (b) depositing a silica layer (16) on the polyimide or benzocyclobutene layer; (c) forming openings in the silica and polyimide or benzocyclobutene layers down to the contact pads (5); (d) applying a metal growth layer and a photosensitive resin layer on the structure; (e) exposing and developing the resin to form the lower face of the inductive component; (f) electrodepositing a copper layer on the exposed zones of the metal growth layer to form the inductive component strip; and (g) removing residues of the resin and the metal growth layer.

    10.
    发明专利
    未知

    公开(公告)号：FR2790328B1

    公开(公告)日：2001-04-20

    申请号：FR9902658

    申请日：1999-02-26

    Applicant: MEMSCAP

    Inventor： BARTERES LAURENT ,  MHANI AHMED ,  VALENTIN FRANCOIS ,  KARAM JEAN MICHEL

    IPC: H01F27/28 ,  H01F17/00 ,  H01L21/822 ,  H01L23/64 ,  H01L27/04 ,  H01F21/00

    Abstract: An inductive component (1) comprises a quartz substrate (2) and a planar inductor coil of copper strip (3) of specified thickness. A novel inductive component (1) comprises a quartz substrate layer (2) and a planar inductor formed of a spirally wound copper strip (3) of greater than 10 mu m thickness. Independent claims are also included for the following: (i) an integrated transformer comprising a quartz substrate (2) and two planar inductor coils which are wound within one another and which are formed of copper strip (3) of greater than 10 mu m thickness; and (ii) an IC associated with the above inductive component or integrated transformer mounted by means of conductive spacer elements which provide electrical connections between IC connection pads and connection terminals of the inductive component or integrated transformer, the inductive component or integrated transformer being oriented with respect to the IC such that its face including the inductors faces the IC. Preferred Features: The strip is about 30 mu m thick. A polyimide layer is provided between the inductor (3) and the substrate (2) and within the strip segment (8) connecting the coil center (9) to the strip end (10) forming a connection terminal. The strip is coated with a gold layer on its surfaces other than those in contact with the substrate or the polyimide layer and the spaces between the facing surfaces of adjacent windings is free from any material. The strip forms a circular spiral or two parallel series-connected spirals, the spiral nearest the substrate being embedded in a polyimide layer which is covered with a silica barrier layer. Spacer elements, of height close to the strip thickness, are mounted on the connection terminal-forming ends of the strip and have a cylindrical shape with a diameter of about three times their height.

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