公开(公告)号：DE69934384T2

公开(公告)日：2007-09-27

申请号：DE69934384

申请日：1999-04-23

Applicant: MICROCHIP TECH INC

Inventor： ST AMAND ROGER ,  MA ROBERT ,  DEUTSCHER NEIL

IPC: H01L21/316 ,  H01L21/762 ,  H01L21/314 ,  H01L21/32 ,  H01L21/76 ,  H01L27/08 ,  H01L29/78

Abstract: A method is disclosed for forming narrow thermal silicon dioxide side isolation regions in a semiconductor substrate and MOS or CMOS semiconductor devices fabricated by this method. A thin stress relief layer is used in conjunction with a polysilicon buffering stress relief layer on the surface of a semiconductor substrate prior to the field oxidation process to restrict lateral silicon dioxide expansion thereby permitting the creation of narrow thermal silicon dioxide side isolation regions in the semiconductor substrate. A silicon dioxide layer is also used between an amorphous polysilicon (buffering stress relief) layer and a silicon nitride layer to function as an oxide cap, to avoid undesired pitting of the amorphous polysilicon layer, and to avoid interaction between the silicon nitride and amorphous polysilicon layers in areas of high stress.

公开(公告)号：DE69934384D1

公开(公告)日：2007-01-25

申请号：DE69934384

申请日：1999-04-23

Applicant: MICROCHIP TECH INC

Inventor： ST AMAND ROGER ,  MA ROBERT ,  DEUTSCHER NEIL

IPC: H01L21/316 ,  H01L21/762 ,  H01L21/314 ,  H01L21/32 ,  H01L21/76 ,  H01L27/08 ,  H01L29/78

Abstract: A method is disclosed for forming narrow thermal silicon dioxide side isolation regions in a semiconductor substrate and MOS or CMOS semiconductor devices fabricated by this method. A thin stress relief layer is used in conjunction with a polysilicon buffering stress relief layer on the surface of a semiconductor substrate prior to the field oxidation process to restrict lateral silicon dioxide expansion thereby permitting the creation of narrow thermal silicon dioxide side isolation regions in the semiconductor substrate. A silicon dioxide layer is also used between an amorphous polysilicon (buffering stress relief) layer and a silicon nitride layer to function as an oxide cap, to avoid undesired pitting of the amorphous polysilicon layer, and to avoid interaction between the silicon nitride and amorphous polysilicon layers in areas of high stress.

公开(公告)号：WO0031779A9

公开(公告)日：2002-08-29

申请号：PCT/US9927885

申请日：1999-11-24

Applicant: MICROCHIP TECH INC

Inventor： ALEXANDER SAM E ,  YACH RANDY L ,  ST AMAND ROGER

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/822 ,  H01L27/04 ,  H01L27/08

CPC classification number: H01L28/40 ,  H01L27/0805

Abstract: An improved high quality factor capacitive device is implemented on a single, monolithic integrated circuit. The new layout techniques improve the quality factor (Q) of the capacitor by reducing intrinsic resistance of the capacitor by means of reducing the distance between the metal contacts of the top and bottom conductive plates. The layout techniques require laying out the top conductive plate of the capacitor in strips such that metal contacts from the bottom conductive plate pass in between the strips and through the dielectric layer. Alternatively, the apertures may be etched into the top conductive plate so that metal contacts pass through the apertures and connect to the bottom conductive plate.

Abstract translation: 改进的高品质因素电容器件在单个单片集成电路上实现。 新的布局技术通过减小顶部和底部导电板的金属触点之间的距离来降低电容器的固有电阻，从而提高了电容器的品质因数（Q）。 布局技术需要将带状电容器的顶部导电板布置成使得来自底部导电板的金属接触通过条带之间并通过介电层。 或者，孔可以被蚀刻到顶部导电板中，使得金属触点穿过孔并连接到底部导电板。

公开(公告)号：WO02057097A2

公开(公告)日：2002-07-25

申请号：PCT/US0201177

申请日：2002-01-17

Applicant: MICROCHIP TECH INC

Inventor： VAN NIEKERK JAN ,  ST AMAND ROGER ,  URADNIK JOSEPH ,  KATZ PAUL N

IPC: B60C23/04 ,  G01L17/00 ,  G01M17/02 ,  B60C23/00

CPC classification number: B60C23/0416 ,  B60C23/007 ,  B60C23/009 ,  G01L17/00 ,  G01M17/02

Abstract: A wireless tire inflation pressure measurement device (122a-122d) is used to obtain inflation pressure information for a tire of a vehicle and a signal therefrom may be used for determining the location of the tire. An identifier may be associated with the inflation pressure information for each wheel of the vehicle. Tire rotation speed may be determined by amplitude fluctuations of a radio frequency carrier from a radio frequency transmitter rotating with the wheel. Differences in wheel rotation speeds during a turn may be used in determining the location of each tire of the vehicle. An antenna to the radio frequency transmitter. A radio frequency identification (RFID) tag and pressure sensor may be used as the wireless tire inflation pressure measurement device and a RFID pickup coil may be provided in each wheel well for pickup of the inflation pressure signals from each RFID tag on a wheel.

Abstract translation: 使用无线轮胎充气压力测量装置（122a-122d）来获得车辆轮胎的充气压力信息，并且可以使用该信号来确定轮胎的位置。 标识符可以与车辆的每个车轮的充气压力信息相关联。 轮胎转速可以由来自与轮一起旋转的射频发射器的射频载波的幅度波动来确定。 在转弯期间车轮转速的差异可以用于确定车辆的每个轮胎的位置。 射频发射机的天线。 无线电频率识别（RFID）标签和压力传感器可以用作无线轮胎充气压力测量装置，并且可以在每个轮舱中提供RFID拾取线圈，用于从车轮上的每个RFID标签获取充气压力信号。

公开(公告)号：WO02056245A3

公开(公告)日：2003-02-20

申请号：PCT/US0146523

申请日：2001-12-03

Applicant: MICROCHIP TECH INC

Inventor： FUREY LEE ,  LEE YOUBOK ,  ST AMAND ROGER

IPC: G06K19/077

CPC classification number: G06K19/0775 ,  G06K19/0726 ,  G06K19/07749 ,  H01L2224/48091 ,  H01L2924/01079 ,  H01L2924/19041 ,  H01L2924/00014

Abstract: A radio frequency identification (RFID) tag (200) on a single layer substrate comprises a semiconductor integrated circuit RFID tag device (202) and antenna circuit (106). A connection jumper (206) may be used to bridge over the antenn circuit coil turns (108). The RFID tag device is located on the same side as an inductor coil (108) and capacitor (110) which forms a parallel resonant antenna circuit. The inductor coil (108) has an inner end (210) and an outer end (212). The inner (210) or outer end (212) may be connected directly to the RFID tag device and the outer or inner end (210, 212) be may connected to the RFID tag device with a jumper (206) over the inductor coil turns, or the RFID tag device may bridge the inductor coil turns when being connected to both the inner and outer ends (210, 212). An encapsulation (glop top) may be used to seal the RFID tag device and jumper, and an insulated coating may be used to cover the entire surface of the substrate to create an inexpensive "chip-on-tag." The encapsulation may be epoxy, plastic or any protective material known to one of ordinary skill in the art of electronic circuit encapsulation. The insulated coating may be of any type suitable for the applicaiton of use of the RFID tag.

Abstract translation: 单层基板上的射频识别（RFID）标签（200）包括半导体集成电路RFID标签装置（202）和天线电路（106）。 连接跳线（206）可用于桥接天线电路线圈匝（108）。 RFID标签装置位于与形成并联谐振天线电路的电感线圈（108）和电容器（110）相同的一侧。 电感线圈（108）具有内端（210）和外端（212）。 内部（210）或外端（212）可以直接连接到RFID标签装置，并且外部或内部端（210,212）可以通过电感线圈匝上的跳线（206）连接到RFID标签装置 或者当连接到内端和外端（210,212）时，RFID标签装置可桥接电感线圈匝。 可以使用封装（glop顶部）来密封RFID标签装置和跳线，并且可以使用绝缘涂层来覆盖基板的整个表面以创建便宜的“芯片上的标签”。 封装可以是环氧树脂，塑料或电子电路封装领域的普通技术人员已知的任何保护材料。 绝缘涂层可以是适用于使用RFID标签的任何类型。