FUNCTIONAL INK APPARATUS AND METHOD
    5.
    发明申请
    FUNCTIONAL INK APPARATUS AND METHOD 审中-公开
    功能墨水设备和方法

    公开(公告)号:WO2007050346A3

    公开(公告)日:2007-06-21

    申请号:PCT/US2006040401

    申请日:2006-10-13

    Abstract: A functional ink (200) suitable for use as a dielectric layer (303) in a printed semiconductor device (300) comprises a dielectric carrier (201) and a plurality of dielectric particles (202) sized less than about 1,000 nanometers that are disposed within the dielectric carrier. In a preferred approach the dielectric carrier comprises a dielectric resin and the dielectric particles comprise a ferroelectric material (such as, but not limited to, BaTiO 3 . So provided, this functional ink can be applied to a substrate (301) of choice through a printing technique of choice to thereby provide a resultant printed semiconductor device, such as a field effect transistor, having a relatively thin dielectric layer comprised of this functional ink.

    Abstract translation: 适合用作印刷半导体器件(300)中的电介质层(303)的功能油墨(200)包括电介质载体(201)和尺寸小于约1000纳米的多个电介质颗粒(202) 电介质载体。 在优选的方法中,电介质载体包括电介质树脂,并且电介质颗粒包含铁电材料(例如但不限于BaTiO 3 N 3)。因此,该功能性油墨可以应用于基底 (301),通过选择的打印技术来选择,从而提供具有由该功能性墨水组成的相对薄的介电层的所得印刷半导体器件,例如场效应晶体管。

    AN INVERTER CIRCUIT HAVING A FEEDBACK SWITCH AND METHODS CORRESPONDING THERETO
    6.
    发明申请
    AN INVERTER CIRCUIT HAVING A FEEDBACK SWITCH AND METHODS CORRESPONDING THERETO 审中-公开
    具有反馈开关的逆变器电路和与之相关的方法

    公开(公告)号:WO2007050403A2

    公开(公告)日:2007-05-03

    申请号:PCT/US2006040791

    申请日:2006-10-20

    CPC classification number: H03K19/01721 H03K19/09441

    Abstract: An inverter circuit (500) having a drive transistor (102) that operably couples to a voltage bias input (101) (and where that drive transistor controls the inverter circuit output by opening and closing a connection between the output (105) and ground (104)) is further operably coupled to a feedback switch (401). In a preferred approach the feedback switch is itself also operably coupled to the voltage bias input and the output and preferably serves, when the drive transistor is switched "off", to responsively couple the voltage bias input to the drive transistor in such a way as to cause a gate terminal of the drive transistor to have its polarity relative to a source terminal of the drive transistor reversed and hence permit the inverter circuit to operate across a substantially full potential operating range of the drive transistor.

    Abstract translation: 一种具有可操作地耦合到电压偏置输入(101)的驱动晶体管(102)的逆变器电路(500),并且其中驱动晶体管通过打开和关闭输出(105)和地( 104))进一步可操作地耦合到反馈开关(401)。 在优选的方法中,反馈开关本身也可操作地耦合到电压偏置输入端和输出端,并且优选地在驱动晶体管被切换为“断开”时,将电压偏置输入端以这样的方式响应地耦合到驱动晶体管: 以使驱动晶体管的栅极端子相对于驱动晶体管的源极端子的极性相反,从而允许逆变器电路在驱动晶体管的基本上全部的电位工作范围内工作。

    SEMICONDUCTOR DEVICE AND METHOD FOR PROVIDING A REDUCED SURFACE AREA ELECTRODE
    7.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR PROVIDING A REDUCED SURFACE AREA ELECTRODE 审中-公开
    用于提供减少表面区域电极的半导体器件和方法

    公开(公告)号:WO2007050579A3

    公开(公告)日:2009-04-23

    申请号:PCT/US2006041429

    申请日:2006-10-24

    Abstract: An apparatus (200) such as a semiconductor device comprises a gate electrode (201) and at least a first electrode (202). The first electrode preferably has an established perimeter that at least partially overlaps with respect to the gate electrode to thereby form a corresponding transistor channel. In a preferred approach the first electrode has a surface area that is reduced notwithstanding the aforementioned established perimeter. This, in turn, aids in reducing any corresponding parasitic capacitance. This reduction in surface area may be accomplished, for example, by providing openings (203) through certain portions of the first electrode.

    Abstract translation: 诸如半导体器件的装置(200)包括栅电极(201)和至少第一电极(202)。 第一电极优选地具有与栅电极至少部分重叠的确定的周边,从而形成对应的晶体管沟道。 在优选的方法中,尽管具有上述建立的周长,第一电极具有减小的表面积。 这又有助于减少任何相应的寄生电容。 表面积的这种减小可以例如通过提供通过第一电极的某些部分的开口(203)来实现。

    NANOPARTICLE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING
    8.
    发明申请
    NANOPARTICLE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING 审中-公开
    纳米二极管器件及其制造方法

    公开(公告)号:WO2009032515A2

    公开(公告)日:2009-03-12

    申请号:PCT/US2008073538

    申请日:2008-08-19

    Abstract: A low-temperature process for creating a semiconductive device by printing a liquid composition containing semiconducting nanoparticles. The semiconductive device is formed on a polymeric substrate (22) by printing a composition that contains nanoparticles of inorganic semiconductor suspended in a carrier, using a graphic arts printing method. The printed deposit is then heated to remove substantially all of the carrier from the printed deposit (25). The low-temperature process does not heat the substrate or the printed deposit above 300° C. The mobility of the resulting semiconductive device is between about 10 cm2/Vs and 200 cm2/Vs.

    Abstract translation: 通过印刷含有半导体纳米颗粒的液体组合物来产生半导体器件的低温方法。 通过使用印刷技术印刷方法印刷含有悬浮在载体中的无机半导体的纳米颗粒的组合物,在聚合物基材(22)上形成半导体装置。 然后加热印刷的沉积物以从印刷沉积物(25)中基本上除去所有的载体。 低温工艺不会将衬底或印刷沉积物加热到300℃以上。所得半导体器件的迁移率在约10cm 2 / Vs至200cm 2 / Vs之间。

    METHOD AND APPARATUS TO FACILITATE TESTING OF PRINTED SEMICONDUCTOR DEVICES
    10.
    发明申请
    METHOD AND APPARATUS TO FACILITATE TESTING OF PRINTED SEMICONDUCTOR DEVICES 审中-公开
    印刷半导体器件的测试方法和装置

    公开(公告)号:WO2007050428A3

    公开(公告)日:2008-10-23

    申请号:PCT/US2006040894

    申请日:2006-10-19

    CPC classification number: H01L22/14 H01L51/0005

    Abstract: A printing platform receives (102) (preferably in-line with a semiconductor device printing process (101)) a substrate having at least one semiconductor device printed thereon and further having a test structure printed thereon, which test structure comprises at least one printed semiconductor layer. These teachings then provide for the automatic testing (103) of the test structure with respect to at least one static (i.e., relatively unchanging) electrical characteristic metric. The static electrical characteristic metric (or metrics) of choice will likely vary with the application setting but can include, for example, a measure of electrical resistance, a measure of electrical reactance, and/or a measure of electrical continuity. Optionally (though preferably) the semiconductor device printing process itself is then adjusted (105) as a function, at least in part, of this metric.

    Abstract translation: 印刷平台接收(优选地与半导体器件印刷工艺(101)成直角))具有印刷在其上的至少一个半导体器件并且还具有印刷在其上的测试结构的衬底,该测试结构包括至少一个印刷半导体 层。 然后,这些教导提供了关于至少一个静态(即,相对不变的)电特性度量的测试结构的自动测试(103)。 选择的静态电特性度量(或度量)可能随着应用设置而变化,但是可以包括例如电阻的测量,电抗的测量和/或电连续性的测量。 可选地(尽管优选地),然后至少部分地基于该度量来调整(105)半导体器件打印过程本身。

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