FLIP-CHIP ASSEMBLY WITH THIN UNDERFILL AND THICK SOLDER MASK

    公开(公告)号:MY136290A

    公开(公告)日:2008-09-30

    申请号:MYPI20041116

    申请日:2004-03-29

    Applicant: MOTOROLA INC

    Abstract: THE INVENTION PROVIDES A METHOD FOR ATTACHING A FLIP CHIP (210) TO AN ELECTRICAL SUBSTRATE (240) SUCH AS A PRINTED WIRING BOARD. A BUMPED FLIP CHIP IS PROVIDED, THE FLIP CHIP INCLUDING AN ACTIVE SURFACE AND A PLURALITY OF CONNECTIVE BUMPS (220) EXTENDING FROM THE ACTIVE SURFACE, EACH CONNECTIVE BUMP INCLUDING A SIDE REGION. A THIN LAYER OF AN UNDERFILL MATERIAL (230) IS APPLIED TO THE ACTIVE SURFACE OF THE FLIP CHIP AND TO A PORTION OF THE SIDE REGIONS OF THE CONNECTIVE BUMPS. THE FLIP CHIP IS POSITIONED ON THE ELECTRICAL SUBSTRATE, THE ELECTRICAL SUBSTRATE INCLUDING A THICK LAYER OF A SOLDER MASK (250) DISPOSED ON THE ELECTRICAL SUBSTRATE. THE FLIP CHIP IS HEATED TO ELECTRICALLY CONNECT THE FLIP CHIP TO THE ELECTRICAL SUBSTRATE, WHEREIN THE UNDERFILL MATERIAL AND THE SOLDER MASK COMBINE TO FORM A STRESS-RELIEF LAYER WHEN THE FLIP CHIP IS ELECTRICALLY CONNECTED TO THE ELECTRICAL SUBSTRATE.

    WAFER COATING AND SINGULATION METHOD

    公开(公告)号:AU2003296904A1

    公开(公告)日:2004-05-04

    申请号:AU2003296904

    申请日:2003-09-05

    Applicant: MOTOROLA INC

    Abstract: A method for providing an underfill material on an integrated circuit chip at the wafer level. The wafer (10) typically contains one or more integrated circuit chips (12), and each integrated circuit chip typically has a plurality of solder bumps (34) on its active surface. The wafer is first diced (22) on the active surface side to form channels (38) that will ultimately define the edges (39) of each individual integrated circuit chip, the dicing being of such a depth that it only cuts part-way through the wafer. The front side (36) of the wafer is then coated (24) with an underfill material (40). Generally, a portion (45) of each solder bump remains uncoated, but in certain cases the bumps can be completely covered. The back side of the wafer is then lapped, ground, polished or otherwise treated (26) so as to remove material down to the level of the previously diced channels. This reduction in the thickness of the wafer causes the original diced channels to now extend completely from the front side to the back side of the wafer. The wafer is then singulated (28) by cutting the underfill material (92) that was deposited in the channels during the coating step, so that the integrated circuit chip (12) is released from the wafer, and the underfill material that was coated on the active side remains affixed to the active surface of each individual integrated circuit chip.

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