公开(公告)号：WO2015103688A1

公开(公告)日：2015-07-16

申请号：PCT/CA2014/051245

申请日：2014-12-22

Applicant: MOTION ENGINE INC.

Inventor： BOYSEL, Robert Mark ,  ROSS, Louis

IPC: B81B7/02 ,  B81B5/00 ,  G01D5/56 ,  G01P15/125 ,  G01P15/18 ,  H01L23/52

CPC classification number: G01P15/18 ,  B81B5/00 ,  B81B7/007 ,  B81B7/02 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2201/0292 ,  B81B2207/012 ,  B81B2207/07 ,  G01P15/0802 ,  G01P15/125 ,  H01L2224/16145

Abstract: The present invention provides a 3D System ("3DS") MEMS architecture that enables the integration of MEMS devices with IC chips to form a System on Chip (So C) or System in Package (Si P). The integrated MEMS system comprises at least one MEMS chip, including MEMS transducers, and at least one IC chip, including not only MEMS processing circuitry, but also additional/auxiliary circuitry to process auxiliary signals. The MEMS and IC chips are bump bonded. The MEMS chip includes first and second insulated conducting pathways. The first pathways conduct the MEMS-signals between the transducers and the IC chip, for processing; and the second conducting pathways extend through the entire thickness of the MEMS chip, to conduct auxiliary signals, such as power, RF, I/Os, to the IC chip, to be processed the additional circuitry.

Abstract translation: 本发明提供了一种3D系统（“3DS”）MEMS架构，其能够将MEMS器件与IC芯片集成以形成片上系统（So C）或系统级封装（Si P）。 集成MEMS系统包括至少一个MEMS芯片，包括MEMS换能器，以及至少一个IC芯片，不仅包括MEMS处理电路，还包括用于处理辅助信号的附加/辅助电路。 MEMS和IC芯片是凸点焊接的。 MEMS芯片包括第一和第二绝缘导电路径。 第一路通过传感器和IC芯片之间的MEMS信号进行处理; 并且第二导电路径延伸穿过MEMS芯片的整个厚度，以将辅助信号（例如功率，RF，I / O）传导到IC芯片，以便对附加电路进行处理。

公开(公告)号：WO2015013827A1

公开(公告)日：2015-02-05

申请号：PCT/CA2014/050729

申请日：2014-08-01

Applicant: MOTION ENGINE INC.

Inventor： BOYSEL, Robert Mark

IPC: G01C19/5712

CPC classification number: G01C19/56 ,  G01C19/5769 ,  H01L2224/94

Abstract: A MEMS device for angular rate measurement is provided. The MEMS device includes a support assembly, a proof mass coupled to the support assembly via a spring assembly to enable motion of the proof mass along three mutually orthogonal axes, and an electrode assembly configured for driving and sensing the motion of the proof mass. The proof mass and the spring assembly form a resonant structure having three oscillation modes each having a respective resonant frequency. The three oscillation modes can be used as drive and sense modes for angular rate measurement. By selecting the properties of the resonant structure, the resonant frequencies can be tuned to provide unmatched resonance conditions between the drive and sense modes so that angular rate measurement can be performed at a frequency that matches the resonant frequency of the drive mode, while being significantly below the resonant frequency of the sense mode.

Abstract translation: 提供了用于角速率测量的MEMS装置。 MEMS装置包括支撑组件，经由弹簧组件联接到支撑组件的证明质量块，以使得证明块沿着三个相互正交的轴线的运动，以及构造成用于驱动和感测证明块运动的电极组件。 检测质量和弹簧组件形成具有三个振荡模式的谐振结构，每个具有相应的谐振频率。 三种振荡模式可用作角速率测量的驱动和检测模式。 通过选择谐振结构的特性，可以调谐谐振频率以在驱动和检测模式之间提供无与伦比的共振条件，从而可以以与驱动模式的谐振频率匹配的频率执行角速率测量，同时显着地 低于感应模式的谐振频率。

公开(公告)号：WO2016145535A1

公开(公告)日：2016-09-22

申请号：PCT/CA2016/050303

申请日：2016-03-17

Applicant: MOTION ENGINE INC.

Inventor： BOYSEL, Robert Mark

IPC: B81B7/02 ,  G01C19/574 ,  G01D21/02 ,  G01L9/00 ,  G01P15/08 ,  G01P15/18 ,  G01R33/028

CPC classification number: G01P15/097 ,  B81B7/0061 ,  B81B7/02 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2201/0292 ,  B81C1/00238 ,  B81C1/00309 ,  G01C19/5712 ,  G01C19/574 ,  G01C19/5762 ,  G01C19/5769 ,  G01D21/02 ,  G01L9/00 ,  G01L9/0045 ,  G01P15/0802 ,  G01P15/125 ,  G01P15/18 ,  G01R33/028 ,  G01R33/0286

Abstract: A single Micro-Electro-Mechanical System (MEMS) sensor chip is provided, for measuring multiple parameters, referred to as multiple degrees of freedom (DOF). The sensor chip comprises a central MEMS wafer bonded to a top cap wafer and a bottom cap wafer, all three wafer being electrically conductive. The sensor comprises at least two distinct sensors, each patterned in the electrically conductive MEMS wafer and in at least one of the top and bottom cap wafer. Insulated conducting pathways extend from electrical connections on the top or bottom cap wafers, through at least one of the electrically conductive top cap and bottom cap wafers, and through the electrically conductive MEMS wafer, to the sensors, for conducting electrical signals between the sensors and the electrical connections. The two or more distinct sensors are enclosed by the top and bottom cap wafers and by the outer frame of MEMS wafer.

Abstract translation: 提供单个微机电系统（MEMS）传感器芯片，用于测量称为多自由度（DOF）的多个参数。 传感器芯片包括结合到顶盖晶片和底盖晶片的中心MEMS晶片，所有三个晶片都是导电的。 传感器包括至少两个不同的传感器，每个传感器在导电MEMS晶片和顶盖和底盖晶片中的至少一个中被图案化。 绝缘导电通道从顶盖或底盖晶片上的电连接延伸穿过导电顶盖和底盖晶片中的至少一个，并通过导电MEMS晶片延伸到传感器，用于传导传感器与传感器之间的电信号 电气连接。 两个或更多个不同的传感器被顶盖和底盖晶片以及MEMS晶片的外框包围。

公开(公告)号：WO2015042701A1

公开(公告)日：2015-04-02

申请号：PCT/CA2014/050904

申请日：2014-09-19

Applicant: MOTION ENGINE INC.

Inventor： BOYSEL, Robert Mark

IPC: B81C1/00 ,  B81B7/02 ,  G01P13/00 ,  G01P15/08

CPC classification number: G01P15/125 ,  B81B7/0064 ,  B81B2201/0235 ,  B81B2201/0264 ,  G01L9/0042 ,  G01P15/0802

Abstract: A MEMS device including a guard ring surrounding an electrode and a method of manufacturing such a MEMS device are provided. The method includes providing a top cap wafer having a thickness, and a MEMS wafer including a MEMS structure, the MEMS wafer, the top cap wafer and the MEMS wafer being made of an electrically conductive semiconductor material. The method also includes forming an electrode structure into a first side of the top cap wafer. The electrode structure includes an electrode and a guard ring laterally surrounding and electrically insulated from the electrode, the electrode and the guard ring each extending through the entire thickness of the top cap wafer. The method further includes bonding the first side of the top cap wafer to a top side of the MEMS wafer such that an electrical connection is established between the electrode and the MEMS structure.

Abstract translation: 提供了包括围绕电极的保护环的MEMS器件和制造这种MEMS器件的方法。 该方法包括提供具有厚度的顶盖晶片和包括MEMS结构的MEMS晶片，MEMS晶片，顶盖晶片和MEMS晶片由导电半导体材料制成。 该方法还包括将电极结构形成到顶盖晶片的第一侧。 电极结构包括电极和保护环，其横向地围绕并与电极电绝缘，电极和保护环各自延伸穿过顶盖晶片的整个厚度。 该方法还包括将顶盖晶片的第一侧接合到MEMS晶片的顶侧，使得在电极和MEMS结构之间建立电连接。

公开(公告)号：WO2016112463A1

公开(公告)日：2016-07-21

申请号：PCT/CA2016/050031

申请日：2016-01-14

Applicant: MOTION ENGINE INC.

Inventor： BOYSEL, Robert Mark

IPC: B81B7/02 ,  B81B3/00 ,  G01C21/16 ,  H01L23/48

CPC classification number: B81B7/007 ,  B81B3/00 ,  B81B7/02 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/0315 ,  B81B2207/095 ,  B81C1/00301 ,  B81C2201/013 ,  B81C2203/0118 ,  G01C19/5783 ,  G01C21/16

Abstract: A three dimensional (3D) micro-electro-mechanical system (MEMS) device is provided. The device comprises a central MEMS wafer, and top and bottom cap wafers. The MEMS wafer includes a MEMS structure, such as an inertial sensor. The 5 top cap wafer, the bottom cap wafer and the MEMS wafers are stacked along a stacking axis and together form at least one hermetic cavity enclosing the MEMS structure. At least one of the top cap wafer and the bottom cap wafer is a silicon-on- insulator (SOI) cap wafer comprising a cap device layer, a cap handle layer and a cap insulating layer interposed between the cap device layer and the cap handle layer. At 10 least one electrically conductive path extends through the SOI cap wafer, establishing an electrical connection between an outer electrical contact provided on the SOI cap wafer and the MEMS structure.

Abstract translation: 提供了三维（3D）微机电系统（MEMS）装置。 该装置包括中央MEMS晶片，以及顶盖和底盖晶片。 MEMS晶片包括MEMS结构，例如惯性传感器。 5顶盖晶片，底盖晶片和MEMS晶片沿着堆叠轴线堆叠并且一起形成包围MEMS结构的至少一个密封腔。 顶盖晶片和底盖晶片中的至少一个是绝缘体上硅绝缘体（SOI）盖晶片，其包括盖装置层，盖手柄层和插入在盖装置层和盖手柄之间的盖绝缘层 层。 在10个至少一个导电路径延伸穿过SOI帽晶片，在SOI盖晶片上提供的外部电触点和MEMS结构之间建立电连接。

公开(公告)号：WO2015184531A1

公开(公告)日：2015-12-10

申请号：PCT/CA2015/050018

申请日：2015-01-12

Applicant: MOTION ENGINE INC.

Inventor： BOYSEL, Robert Mark ,  ROSS, Louis

IPC: G01C19/5712 ,  G01C19/56 ,  G01P13/00 ,  G01P15/18

CPC classification number: G01C19/5712 ,  B81B2201/0235 ,  G01C19/5719 ,  G01C19/5733 ,  G01P15/0802 ,  G01P15/125 ,  G01P15/18 ,  G01P2015/084

Abstract: A micro-electro-mechanical system (MEMS) motion sensor is provided that includes a MEMS wafer having a frame structure, a plurality of proof masses suspended to the frame structure, movable in three dimensions, and enclosed in one or more cavities. The MEMS sensor includes top and bottom cap wafers bonded to the MEMS wafer and top and bottom electrodes provided in the top and bottom cap wafers, forming capacitors with the plurality of proof masses, and being together configured to detect motions of the plurality of proof masses. The MEMS sensor further includes first electrical contacts provided on the top cap wafer and electrically connected to the top electrodes, and a second electrical contacts provided on the top cap wafer and electrically connected to the bottom electrodes by way of vertically extending insulated conducting pathways. A method for measuring acceleration and angular rate along three mutually orthogonal axes is also provided.

Abstract translation: 提供了一种微电子机械系统（MEMS）运动传感器，其包括具有框架结构的MEMS晶片，悬挂于框架结构的多个校准块，可在三维中移动并封闭在一个或多个空腔中。 MEMS传感器包括接合到MEMS晶片的顶盖和底盖晶片，以及设置在顶盖和底盖晶片中的顶电极和底电极，形成具有多个检验质量块的电容器，并且一起构造成检测多个检验质量块的运动 。 MEMS传感器还包括设置在顶盖晶片上并电连接到顶部电极的第一电触点和设置在顶盖晶片上并通过垂直延伸的绝缘导电路径电连接到底部电极的第二电触点。 还提供了一种用于沿三个相互正交的轴测量加速度和角速度的方法。

公开(公告)号：WO2015154173A1

公开(公告)日：2015-10-15

申请号：PCT/CA2015/050026

申请日：2015-01-15

Applicant: MOTION ENGINE INC.

Inventor： BOYSEL, Robert Mark ,  ROSS, Louis

IPC: G01L9/12

CPC classification number: G01L9/0073 ,  B81B7/007 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2207/012 ,  B81B2207/015 ,  B81B2207/07 ,  B81C1/00182 ,  B81C1/00301 ,  B81C2203/0109 ,  B81C2203/0792 ,  G01L13/025

Abstract: The present invention provides a MEMS pressure sensor and a manufacturing method. The pressure is formed by a top cap wafer, a MEMS wafer and a bottom cap wafer. The MEMS wafer comprises a frame and a membrane, the frame defining a cavity. The membrane is suspended by the frame over the cavity. The bottom cap wafer closes the cavity. The top cap wafer has a recess defining with the membrane a capacitance gap. The top cap wafer comprises a top cap electrode located over the membrane and forming, together with the membrane, a capacitor to detect a deflection of the membrane. Electrical contacts on the top cap wafer are connected to the top cap electrode. A vent is extends from outside of the sensor into the cavity or the capacitance gap. The pressure sensor can include two cavities and two capacitance gaps, to form a differential pressure sensor.

Abstract translation: 本发明提供一种MEMS压力传感器及其制造方法。 压力由顶盖晶片，MEMS晶片和底盖晶片形成。 MEMS晶片包括框架和膜，框架限定空腔。 膜通过框架悬挂在空腔上。 底盖晶片封闭空腔。 顶盖晶片具有限定了膜的电容间隙的凹部。 顶盖晶片包括位于膜上方的顶盖电极，并与薄膜一起形成用于检测膜偏转的电容器。 顶盖晶片上的电触点连接到顶盖电极。 通气孔从传感器的外部延伸到空腔或电容间隙。 压力传感器可以包括两个空腔和两个电容间隙，以形成差压传感器。

公开(公告)号：WO2015042702A1

公开(公告)日：2015-04-02

申请号：PCT/CA2014/050910

申请日：2014-09-23

Applicant: MOTION ENGINE INC.

Inventor： BOYSEL, Robert Mark

IPC: B81C1/00 ,  B81B5/00 ,  B81B7/02 ,  G01C19/56 ,  G01P15/08

CPC classification number: B81B3/0078 ,  B81B7/0058 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/0163 ,  B81B2207/092 ,  B81C1/00269 ,  B81C2201/013 ,  G01C19/5783 ,  G01P15/0802 ,  G01P15/125

Abstract: A micro-electro-mechanical system (MEMS) device and a manufacturing method are provided. The device includes top and bottom cap wafers and a MEMS wafer disposed between the top cap wafer and the bottom cap wafer. The top, bottom and MEMS wafers define sidewalls of a cavity. A MEMS structure is housed within the cavity and is movable relative to the top and bottom caps. At least one electrode is provided in one of the wafers, the electrode being operatively coupled to the MEMS structure to detect or induce a movement thereof. A support structure extends through the cavity from the top cap wafer to the bottom cap wafer to prevent bowing in the top cap and bottom cap wafers.

Abstract translation: 提供了一种微电子机械系统（MEMS）装置和制造方法。 该装置包括顶盖和底盖晶片以及设置在顶盖晶片和底盖晶片之间的MEMS晶片。 顶部，底部和MEMS晶片限定空腔的侧壁。 MEMS结构容纳在腔内并且可相对于顶盖和底盖移动。 在一个晶片中提供至少一个电极，电极可操作地耦合到MEMS结构以检测或引起其移动。 支撑结构通过空腔从顶盖晶片延伸到底盖晶片，以防止在顶盖和底盖晶片中弯曲。

公开(公告)号：WO2016090467A1

公开(公告)日：2016-06-16

申请号：PCT/CA2015/051259

申请日：2015-12-02

Applicant: MOTION ENGINE INC.

Inventor： BOYSEL, Robert Mark

IPC: G01R33/02

CPC classification number: G01R33/0286 ,  B81B2201/02 ,  G01R33/0206

Abstract: A micro-electro-mechanical system (MEMS) magnetometer is provided for measuring magnetic field components along three orthogonal axes. The MEMS magnetometer includes a top cap wafer, a bottom cap wafer and a MEMS wafer having opposed top and bottom sides bonded respectively to the top and bottom cap wafers. The MEMS wafer includes a frame structure and current-carrying first, second and third magnetic field transducers. The top cap, bottom cap and MEMS wafer are electrically conductive and stacked along the third axis. The top cap wafer, bottom cap wafer and frame structure together form one or more cavities enclosing the magnetic field transducers. The MEMS magnetometer further includes first, second and third electrode assemblies, the first and second electrode assemblies being formed in the top and/or bottom cap wafers. Each electrode assembly is configured to sense an output of a respective magnetic field transducer induced by a respective magnetic field component.

Abstract translation: 提供微机电系统（MEMS）磁力计，用于沿三个正交轴测量磁场分量。 MEMS磁力计包括顶盖晶片，底盖晶片和具有分别结合到顶盖和底盖晶片的相对的顶面和底面的MEMS晶片。 MEMS晶片包括框架结构和载流的第一，第二和第三磁场换能器。 顶盖，底盖和MEMS晶片是导电的并且沿着第三轴线堆叠。 顶盖晶片，底盖晶片和框架结构一起形成包围磁场换能器的一个或多个空腔。 MEMS磁强计进一步包括第一和第三电极组件，第一和第二电极组件形成在顶盖和/或底盖晶片中。 每个电极组件被配置为感测由相应的磁场分量感应的相应磁场换能器的输出。

公开(公告)号：WO2016044932A1

公开(公告)日：2016-03-31

申请号：PCT/CA2015/050937

申请日：2015-09-23

Applicant: MOTION ENGINE INC.

Inventor： BOYSEL, Robert Mark

IPC: G01D5/56 ,  B81B7/02 ,  B81C1/00 ,  G01C19/5769 ,  G01P15/02

CPC classification number: B81B7/02 ,  B81C1/00 ,  G01C19/5783 ,  G01P15/0802 ,  G01P15/125

Abstract: A method for manufacturing a three dimensional MEMS sensor is provided. The MEMS sensor comprises first and second caps bonded to a central MEMS wafer, the central MEMS wafer comprising a MEMS structure. The method comprises a step of forming at least one recess on the inner side of at least one of the silicon- based cap wafers by growing thermal oxide films to consume a portion of silicon. The recess forms the capacitance gap in the MEMS sensor, between one the caps and the MEMS structure. The capacitor gap uniformity is improved by employing a local oxidation or LOCOS process and by removal of the oxide to produce the capacitor gap.

Abstract translation: 提供了一种用于制造三维MEMS传感器的方法。 MEMS传感器包括结合到中央MEMS晶片的第一和第二盖，中心MEMS晶片包括MEMS结构。 该方法包括通过生长热氧化膜以消耗一部分硅来在至少一个硅基盖晶片的内侧上形成至少一个凹陷的步骤。 凹部形成MEMS传感器中的一个盖和MEMS结构之间的电容间隙。 通过采用局部氧化或LOCOS工艺并通过去除氧化物以产生电容器间隙来改善电容器间隙的均匀性。